Biaxial strain tuned upconversion photoluminescence of monolayer WS2

Shrawan Roy,Xiaodong Yang,Jie Gao
DOI: https://doi.org/10.1038/s41598-024-54185-8
IF: 4.6
2024-02-17
Scientific Reports
Abstract:Monolayer tungsten disulfide (1L-WS 2 ) is a direct bandgap atomic-layered semiconductor material with strain tunable optical and optoelectronic properties among the monolayer transition metal dichalcogenides (1L-TMDs). Here, we demonstrate biaxial strain tuned upconversion photoluminescence (UPL) from exfoliated 1L-WS 2 flakes transferred on a flexible polycarbonate cruciform substrate. When the biaxial strain applied to 1L-WS 2 increases from 0 to 0.51%, it is observed that the UPL peak position is redshifted by up to 60 nm/% strain, while the UPL intensity exhibits exponential growth with the upconversion energy difference varying from − 303 to − 120 meV. The measured power dependence of UPL from 1L-WS 2 under biaxial strain reveals the one photon involved multiphonon-mediated upconversion mechanism. The demonstrated results provide new opportunities in advancing TMD-based optical upconversion devices for future flexible photonics and optoelectronics.
multidisciplinary sciences
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