Abstract:Two-dimensional transition-metal dichalcogenides (TMDs) have been one of the hottest focus of materials due to the most beneficial electronic and optoelectronic properties. Up to now, one of the big challenges is the synthesis of large-area layer-number-controlled single-crystal films. However, the poor understanding of the growth mechanism seriously hampers the progress of the scalable production of TMDs with precisely tunable thickness at an atomic scale. Here, the growth mechanisms in the vertical direction were systemically studied based on the density functional theory (DFT) calculation and an advanced chemical vapor deposition (CVD) growth. As a result, the U-type relation of the TMD layer number to the ratio of metal/chalcogenide is confirmed by the capability of ultrafine tuning of the experimental conditions in the CVD growth. In addition, high-quality uniform monolayer, bilayer, trilayer, and multilayer TMDs in a large area (8 cm2) were efficiently synthesized by applying this modified CVD. Although bilayer TMDs can be obtained at both high and low ratios of metal/chalcogenide based on the suggested mechanism, they demonstrate significantly different optical and electronic transport properties. The modified CVD strategy and the proposed mechanism should be helpful for synthesizing and large-area thickness-controlled TMDs and understanding their growth mechanism and could be used in integrated electronics and optoelectronics.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acsami.0c08335?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acsami.0c08335</a>.Detailed parameter of every growth situation in WS2 CVD growth process; the synchronous optical microscopy images of WS2 in the CVD growth process; binding energy of the WS3 cluster on WS2 crystal edge (before and after adsorbed WSO2); DFT results of the binding energy of different WSx clusters on the top surface (EbP) and edge (EbE) of WS2 crystal; and diffusion barriers of WS1 and WS3 clusters on the surface of WS2 (<a class="ext-link" href="/doi/suppl/10.1021/acsami.0c08335/suppl_file/am0c08335_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.

Rational Design for High-Yield Monolayer WS2films in Confined Space under Fast Thermal Processing.

Space-confined and Substrate-Directed Synthesis of Transition-Metal Dichalcogenide Nanostructures with Tunable Dimensionality.

Synthesis of Wafer-Scale Monolayer WS2 Crystals toward the Application in Integrated Electronic Devices

Controllable synthesis of high quality monolayer WS2 on a SiO2/Si substrate by chemical vapor deposition

Controlled Growth of High-Quality Monolayer Ws2 Layers on Sapphire and Imaging Its Grain Boundary

Ultrafast Growth of Large Single Crystals of Monolayer WS2 and WSe2

Growth of Large-Area Homogeneous Monolayer Transition-Metal Disulfides Via a Molten Liquid Intermediate Process.

Two-Dimensional High-Quality Monolayered Triangular WS2 Flakes for Field-Effect Transistors

Growth Mechanisms and Morphology Engineering of Atomic Layer-Deposited WS2.

Facile and Controllable Synthesis of Large-Area Monolayer WS2 Flakes Based on WO3 Precursor Drop-Casted Substrates by Chemical Vapor Deposition

Layer-by-layer epitaxy growth of thickness-controllable two-dimensional tungsten disulfide

Growth Mechanisms and Morphology Engineering of Atomic Layer-Deposited WS 2

Universal Precise Growth of 2D Transition-Metal Dichalcogenides in Vertical Direction

Modified Spatially Confined Strategy Enabled Mild Growth Kinetics for Facile Growth Management of Atomically-Thin Tungsten Disulfides

Synthesis of Centimeter-Scale WS2 Membrane by Chemical Vapor Deposition

Facile Synthesis of Large-Area and Highly Crystalline WS2 Film on Dielectric Surfaces for SERS

Reliable Synthesis of Large-Area Monolayer WS2 Single Crystals, Films, and Heterostructures with Extraordinary Photoluminescence Induced by Water Intercalation

Fast growth of large single-crystalline WS2 monolayers via chemical vapor deposition

Highly Selective Synthesis of Monolayer or Bilayer WSe2 Single Crystals by Pre-annealing the Solid Precursor

Highly Selective Synthesis of Monolayer or Bilayer WSe 2 Single Crystals by Pre-annealing the Solid Precursor

CVD Growth of Monolayer WS2 Through Controlled Growth Temperature and Time