Benefit from sealants in a moderately fluoridated community.

M. H. Reisbick,C. Thanos,R. Berson,C. Goldstein

Abstract:

What problem does this paper attempt to address?

Edge Reconstruction-Dependent Growth Kinetics of MoS2

Jichen Dong,Degong Ding,Chuanhong Jin,Yunqi Liu,Feng Ding

DOI: https://doi.org/10.1021/acsnano.2c05397

IF: 17.1

2022-01-01

ACS Nano

Abstract:Understanding the growth mechanisms of multielement two-dimensional (2D) crystals is challenging because of the unbalanced stoichiometry and possible reconstruction of their edges. Here, we present a systematic theoretical study on the chemical vapor deposition (CVD) growth mechanism of MoS2. We found that the growth kinetics of MoS2 highly depends on its edge reconstruction determined by concentrations of Mo and S in the growth environment. Based on the calculated energies of nucleation and propagation of various MoS2 edges, we predicted the transition of a MoS2 island growth from a regime of a triangle enclosed by Mo-terminated zigzag edges that are passivated by 50% S (Mo-II edges), to a regime of continuous evolution within a triangle, hexagon, and inverted triangle with 75%-S-terminated edges (S-III edges) and Mo-II edges, and finally to a regime of triangles with Mo-terminated zigzag edges that are passivated by 100% S (Mo-III edges) by tuning the growth condition from Mo-rich to S-rich, which provides a reasonable explanation to many experimental observations. This study provides a general guideline on theoretical studies of 2D crystals' growth mechanisms, deepens our understanding on the growth mechanism of multielement 2D crystals, and is beneficial for the controllable synthesis of various 2D crystals.
Atomistic Insight into the Epitaxial Growth Mechanism of Single-Crystal Two-Dimensional Transition-Metal Dichalcogenides on Au(111) Substrate

Degong Ding,Shuang Wang,Yipu Xia,Pai Li,Daliang He,Junqiu Zhang,Sunwen Zhao,Guanghui Yu,Yonghui Zheng,Yan Cheng,Maohai Xie,Feng Ding,Chuanhong Jin

DOI: https://doi.org/10.1021/acsnano.2c08188

IF: 17.1

2022-01-01

ACS Nano

Abstract:A mechanistic understanding of interactions be-tween atomically thin two-dimensional (2D) transition-metal dichalcogenides (TMDs) and their growth substrates is important for achieving the unidirectional alignment of nuclei and seamless stitching of 2D TMD domains and thus 2D wafers. In this work, we conduct a cross-sectional scanning transmission electron microscopy (STEM) study to investigate the atomic-scale nucleation and early stage growth behaviors of chemical vapor deposited monolayer (ML-) MoS2 and molecular beam epitaxy ML-MoSe2 on a Au(111) substrate. Statistical analysis reveals the majority of as-grown domains, i.e., similar to 88% for MoS2 and 90% for MoSe2, nucleate on surface terraces, with the rest (i.e., similar to 12% for MoS2 and 10% for MoSe2) on surface steps. Moreover, within the latter case, step-associated nucleation, similar to 64% of them are terminated with a Mo-zigzag edge in connection with the Au surface steps, with the rest (similar to 36%) being S-zigzag edges. In conjunction with ab initio density functional theory calculations, the results confirm that van der Waals epitaxy, rather than the surface step guided epitaxy, plays deterministic roles for the realization of unidirectional ML-MoS2 (MoSe2) domains on a Au(111) substrate. In contrast, surface steps, particularly their step height, are mainly responsible for the integrity and thickness of MoS2/MoSe2 films. In detail, it is found that the lateral growth of monolayer thick MoS2/MoSe2 domains only proceeds across mono-Au-atom high surface steps (similar to 2.4 angstrom), but fail for higher ones (bi-Au atom step and higher) during the growth. Our cross-sectional STEM study also confirms the existence of considerable compressive residual strain that reaches similar to 3.0% for ML-MoS2/MoSe2 domains on Au(111). The present study aims to understand the growth mechanism of 2D TMD wafers.
Morphology Engineering in Monolayer MoS2‐WS2 Lateral Heterostructures

Jiadong Zhou,Bijun Tang,Junhao Lin,Danhui Lv,Jia Shi,Linfeng Sun,Qingsheng Zeng,Lin Niu,Fucai Liu,Xiaowei Wang,Xinfeng Liu,Kazu Suenaga,Chuanhong Jin,Zheng Liu

DOI: https://doi.org/10.1002/adfm.201801568

IF: 19

2018-01-01

Advanced Functional Materials

Abstract:In recent years, heterostructures formed in transition metal dichalcogenides (TMDs) have attracted significant attention due to their unique physical properties beyond the individual components. Atomically thin TMD heterostructures, such as MoS2‐WS2, MoS2‐MoSe2, MoS2‐WSe2, and WSe2‐WS2, are synthesized so far via chemical vapor deposition (CVD) method. Engineering the morphology of domains including size and shape, however, still remains challenging. Here, a one‐step CVD strategy on the morphology engineering of MoS2 and WS2 domains within the monolayer MoS2‐WS2 lateral heterostructures through controlling the weight ratio of precursors, MoO3 and WO3, as well as tuning the reaction temperature is reported. Not only can the size ratio in terms of area between WS2 and MoS2 domains be easily controlled from less than 1 to more than 20, but also the overall heterostructure size can be tuned from several to hundreds of micrometers. Intriguingly, the quantum well structure, a WS2 stripe embedded in the MoS2 matrix, is also observed in the as‐synthesized heterostructures, offering opportunities to study quantum confinement effects and quantum well applications. This approach paves the way for the large‐scale fabrication of MoS2‐WS2 lateral heterostructures with controllable domain morphology, and shall be readily extended to morphology engineering of other TMD heterostructures.
Oriented lateral growth of monolayer MoS2 mediated by highly-oriented MoO2 nanorods on sapphire

Jie Wang,Feifei Lan,Zeyan Wang,Yingmin Wang,Baibiao Huang,Yujian Wang

DOI: https://doi.org/10.1039/d4ce00836g

IF: 3.756

2024-09-26

CrystEngComm

Abstract:Two-dimensional (2D) transition metal chalcogenides (TMDs) have demonstrated immense potential and broad prospects in advancing the fields of next-generation optoelectronics, spintronics, valley electronics, and traditional electronics. In recent years, significant progress has been made in the growth research of TMDs through continuous optimization and innovation of various synthetic strategies. However, precisely controlling the growth conditions of materials, synthesizing high-quality 2D materials with a single domain structure, and achieving the desired shape and performance standards remains a complex scientific challenge. Here, we report on the study of MoS2 nucleation and growth habits by precisely controlling the ratio of molybdenum and sulfur sources during the growth process. Using pre-deposited highly oriented MoO2 nanorods as templates, two preferentially oriented (0° or 60°) MoS2 crystal domains were obtained on c-plane sapphire. Characterization using Raman spectroscopy, PL, XPS, and HRTEM reveals that monolayer MoS2 continuous film, grown using this templating method, possesses superior quality. Our work demonstrates a method for directional growth of high-quality 2D MoS2 thin films using highly oriented 1D MoO2 nanorods as templates and precursors, providing new insights into orientation control for epitaxial growth of 2D TMDs materials.

chemistry, multidisciplinary,crystallography
Effect of Substrate Symmetry on the Orientations of MoS2 Monolayers.

Shuangyuan Pan,Pengfei Yang,Lijie Zhu,Min Hong,Chunyu Xie,Fan Zhou,Yuping Shi,Yahuan Huan,Fangfang Cui,Yanfeng Zhang

DOI: https://doi.org/10.1088/1361-6528/abc566

IF: 3.5

2020-01-01

Nanotechnology

Abstract:Two-dimensional (2D) semiconducting transition metal dichalcogenides (TMDs) are promising platforms for developing next-generation electronic and optoelectronic devices due to their unique properties. To achieve this, the growth of large single-crystal TMDs is a critical issue. Unraveling the factors affecting the nucleation and domain orientation should hold fundamental significance. Herein, we design the chemical vapor deposition growth of monolayer MoS2 triangles on Au(111) and Au(100) facets, for exploring the substrate facet effects on the domain orientations. According to multi-scale characterizations, we find that, the obtained triangular MoS2 domains present two preferential orientations on the six-fold symmetric Au(111) facet, whereas four predominant orientations on the four-fold symmetric Au(100) facet. Using on-site scanning tunneling microscopy, we further reveal the preferred alignments of monolayer MoS2 triangles along the close-packed directions of both Au(111) and Au(100) facets. Moreover, bunched substrate steps are also found to form along the close-packed directions of the crystal facets, which guides the preferential nucleation of monolayer MoS2 along the step edges. This work should hereby deepen the understanding of the substrate facet/step effect on the nucleation and orientation of monolayer MoS2 domains, thus providing fundamental insights into the controllable syntheses of large single-crystal TMD monolayers.
T AILD-like non Hodgkin lymphoma complicated by malignant mesenchymal ocular neoplasia: a case report.

G. Landonio,A. Nosari,M. Barberis,M. Costantini,D. Cipriani,E. Ghislandi

Haematologica

Abstract:We report a case of T AILD-like NHL in a 50-year-old man who partially responded to combined therapies. The course of the disease was complicated by a malignant mesenchymal ocular neoplasia. The patient died because of severe infections and lymphoma dissemination. The association between T AILD-like NHL and carcinomas has been described: no case of concomitant malignant mesenchymal neoplasia is reported in literature.
Effect of substrate symmetry on the orientations of MoS 2 monolayers

Shuangyuan Pan,Pengfei Yang,Lijie Zhu,Min Hong,Chunyu Xie,Fan Zhou,Yuping Shi,Yahuan Huan,Fangfang Cui,Yanfeng Zhang

DOI: https://doi.org/10.1088/1361-6528/abc566

IF: 3.5

2020-12-03

Nanotechnology

Abstract:Abstract Two-dimensional (2D) semiconducting transition metal dichalcogenides (TMDs) are promising platforms for developing next-generation electronic and optoelectronic devices due to their unique properties. To achieve this, the growth of large single-crystal TMDs is a critical issue. Unraveling the factors affecting the nucleation and domain orientation should hold fundamental significance. Herein, we design the chemical vapor deposition growth of monolayer MoS 2 triangles on Au(111) and Au(100) facets, for exploring the substrate facet effects on the domain orientations. According to multi-scale characterizations, we find that, the obtained triangular MoS 2 domains present two preferential orientations on the six-fold symmetric Au(111) facet, whereas four predominant orientations on the four-fold symmetric Au(100) facet. Using on-site scanning tunneling microscopy, we further reveal the preferred alignments of monolayer MoS 2 triangles along the close-packed directions of both Au(111) and Au(100) facets. Moreover, bunched substrate steps are also found to form along the close-packed directions of the crystal facets, which guides the preferential nucleation of monolayer MoS 2 along the step edges. This work should hereby deepen the understanding of the substrate facet/step effect on the nucleation and orientation of monolayer MoS 2 domains, thus providing fundamental insights into the controllable syntheses of large single-crystal TMD monolayers.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology
Substrate Lattice-Guided Seed Formation Controls the Orientation of 2D Transition-Metal Dichalcogenides

Areej Aljarb,Zhen Cao,Hao-Ling Tang,Jing-Kai Huang,Mengliu Li,Weijin Hu,Luigi Cavallo,Lain-Jong Li

DOI: https://doi.org/10.1021/acsnano.7b04323

IF: 17.1

2017-09-26

ACS Nano

Abstract:Two-dimensional (2D) transition-metal dichalcogenide (TMDC) semiconductors are important for next-generation electronics and optoelectronics. Given the difficulty in growing large single crystals of 2D TMDC materials, understanding the factors affecting the seed formation and orientation becomes an important issue for controlling the growth. Here, we systematically study the growth of molybdenum disulfide (MoS2) monolayer on c-plane sapphire with chemical vapor deposition to discover the factors controlling their orientation. We show that the concentration of precursors, that is, the ratio between sulfur and molybdenum oxide (MoO3), plays a key role in the size and orientation of seeds, subsequently controlling the orientation of MoS2 monolayers. High S/MoO3 ratio is needed in the early stage of growth to form small seeds that can align easily to the substrate lattice structures, while the ratio should be decreased to enlarge the size of the monolayer at the next stage of the lateral growth. Moreover, we show that the seeds are actually crystalline MoS2 layers as revealed by high-resolution transmission electron microscopy. There exist two preferred orientations (0° or 60°) registered on sapphire, confirmed by our density functional theory simulation. This report offers a facile technique to grow highly aligned 2D TMDCs and contributes to knowledge advancement in growth mechanism.
Controlled Growth of High-Quality Monolayer Ws2 Layers on Sapphire and Imaging Its Grain Boundary

Yu Zhang,Yanfeng Zhang,Qingqing Ji,Jing Ju,Hongtao Yuan,Jianping Shi,Teng Gao,Donglin Ma,Mengxi Liu,Yubin Chen,Xiuju Song,Harold Y. Hwang,Yi Cui,Zhongfan Liu

DOI: https://doi.org/10.1021/nn403454e

IF: 17.1

2013-01-01

ACS Nano

Abstract:Atomically thin tungsten disulfide (WS2), a structural analogue to MoS2, has attracted great interest due to its indirect-to-direct band-gap tunability, giant spin splitting, and valley-related physics. However, the batch production of layered WS2 is underdeveloped (as compared with that of MoS2) for exploring these fundamental issues and developing its applications. Here, using a low-pressure chemical vapor deposition method, we demonstrate that high-crystalline mono- and few-layer WS2 flakes and even complete layers can be synthesized on sapphire with the domain size exceeding 50 × 50 μm(2). Intriguingly, we show that, with adding minor H2 carrier gas, the shape of monolayer WS2 flakes can be tailored from jagged to straight edge triangles and still single crystalline. Meanwhile, some intersecting triangle shape flakes are concomitantly evolved from more than one nucleus to show a polycrystalline nature. It is interesting to see that, only through a mild sample oxidation process, the grain boundaries are easily recognizable by scanning electron microscopy due to its altered contrasts. Hereby, controlling the initial nucleation state is crucial for synthesizing large-scale single-crystalline flakes. We believe that this work would benefit the controlled growth of high-quality transition metal dichalcogenide, as well as in their future applications in nanoelectronics, optoelectronics, and solar energy conversions.
Wafer-Scale Highly Oriented Monolayer MoS2 with Large Domain Sizes

Qinqin Wang,Na Li,Jian Tang,Jianqi Zhu,Qinghua Zhang,Qi Jia,Ying Lu,Zheng Wei,Hua Yu,Yanchong Zhao,Yutuo Guo,Lin Gu,Gang Sun,Wei Yang,Rong Yang,Dongxia Shi,Guangyu Zhang

DOI: https://doi.org/10.1021/acs.nanolett.0c02531

IF: 10.8

2020-01-01

Nano Letters

Abstract:Two-dimensional molybdenum disulfide (MoS2) is an emergent semiconductor with great potential in next-generation scaled-up electronics, but the production of high-quality monolayer MoS2 wafers still remains a challenge. Here, we report an epitaxy route toward 4 in. monolayer MoS2 wafers with highly oriented and large domains on sapphire. Benefiting from a multisource design for our chemical vapor deposition setup and the optimization of the growth process, we successfully realized material uniformity across the entire 4 in. wafer and greater than 100 μm domain size on average. These monolayers exhibit the best electronic quality ever reported, as evidenced from our spectroscopic and transport characterizations. Our work moves a step closer to practical applications of monolayer MoS2.
Monolayer MoS2 on Sapphire: an Azimuthal Reflection High-Energy Electron Diffraction Perspective

Yu Xiang,Xin Sun,Lukas Valdman,Fu Zhang,Tanushree H. Choudhury,Mikhail Chubarov,Joshua A. Robinson,Joan M. Redwing,Mauricio Terrones,Yuan Ma,Lei Gao,Morris A. Washington,Toh-Ming Lu,Gwo-Ching Wang

DOI: https://doi.org/10.1088/2053-1583/abce08

IF: 6.861

2020-01-01

2D Materials

Abstract:Molybdenum disulfide (MoS2) on the c-plane sapphire has been a very popular system to study in the two-dimensional (2D) materials community. Bottom-up synthesis of monolayer (ML) MoS2 with excellent electrical properties has been achieved on sapphire by various methods, making it a very promising candidate to be used in the next generation nano-electronic devices. However, large-area ML MoS2 with comparable quality as the relatively small size exfoliated ML remains quite a challenge. To overcome this bottle neck, a comprehensive understanding of the structure of the as-grown ML material is an essential first step. Here, we report a detailed structural characterization of wafer-scale continuous epitaxial ML MoS2 grown by metalorganic chemical vapor deposition on sapphire using an azimuthal reflection high-energy electron diffraction (ARHEED) technique. With ARHEED we can map not only 2D but also 3D reciprocal space structure of the ML statistically. From the oscillation in the ARHEED intensity profile along the vertical direction of the ML, we derived a real space distance of ~3 Å at the interface of ML and sapphire. Quantitative diffraction spot broadening analyses of the 3D reciprocal space map reveals low density defects and a small angular misalignment of orientation domains in ML MoS2. Based on atomic force microscopy height distribution analysis, cross-section scanning transmission electron microscopy, and density functional theory calculations, we suggest that there exists a passivation layer between MoS2 ML and sapphire substrate. This ARHEED methodology also has been applied to ML WS2 and is expected to be applicable to other ML transition metal dichalcogenides on arbitrary crystalline or non-crystalline substrates.
Wafer-Scale Highly Oriented Monolayer MoS 2 with Large Domain Sizes

Qinqin Wang,Na Li,Jian Tang,Jianqi Zhu,Qinghua Zhang,Qi Jia,Ying Lu,Zheng Wei,Hua Yu,Yanchong Zhao,Yutuo Guo,Lin Gu,Gang Sun,Wei Yang,Rong Yang,Dongxia Shi,Guangyu Zhang

DOI: https://doi.org/10.1021/acs.nanolett.0c02531

IF: 10.8

2020-08-24

Nano Letters

Abstract:Two-dimensional molybdenum disulfide (MoS2) is an emergent semiconductor with great potential in next-generation scaled-up electronics, but the production of high-quality monolayer MoS2 wafers still remains a challenge. Here, we report an epitaxy route toward 4 in. monolayer MoS2 wafers with highly oriented and large domains on sapphire. Benefiting from a multisource design for our chemical vapor deposition setup and the optimization of the growth process, we successfully realized material uniformity across the entire 4 in. wafer and greater than 100 μm domain size on average. These monolayers exhibit the best electronic quality ever reported, as evidenced from our spectroscopic and transport characterizations. Our work moves a step closer to practical applications of monolayer MoS2.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acs.nanolett.0c02531?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acs.nanolett.0c02531</a>.Photo of the 4 in. multisource CVD system, more growth results under different oxygen flux and temperature, AFM and STEM images of additional layer growth on grain boundaries, AFM images of different locations of a wafer, XPS and Raman characterizations to confirm the oxygen concentration and strain in MoS2 films, more electrical measurements for MoS2 films, detailed structure of logic circuits and the MoS2 growth results on SiO2/Si substrates (<a class="ext-link" href="/doi/suppl/10.1021/acs.nanolett.0c02531/suppl_file/nl0c02531_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Monolayer MoS 2 on sapphire: an azimuthal reflection high-energy electron diffraction perspective

Yu Xiang,Xin Sun,Lukas Valdman,Fu Zhang,Tanushree H Choudhury,Mikhail Chubarov,Joshua A Robinson,Joan M Redwing,Mauricio Terrones,Yuan Ma,Lei Gao,Morris A Washington,Toh-Ming Lu,Gwo-Ching Wang

DOI: https://doi.org/10.1088/2053-1583/abce08

IF: 6.861

2020-12-17

2D Materials

Abstract:Abstract Molybdenum disulfide (MoS 2 ) on the c -plane sapphire has been a very popular system to study in the two-dimensional (2D) materials community. Bottom-up synthesis of monolayer (ML) MoS 2 with excellent electrical properties has been achieved on sapphire by various methods, making it a very promising candidate to be used in the next generation nano-electronic devices. However, large-area ML MoS 2 with comparable quality as the relatively small size exfoliated ML remains quite a challenge. To overcome this bottle neck, a comprehensive understanding of the structure of the as-grown ML material is an essential first step. Here, we report a detailed structural characterization of wafer-scale continuous epitaxial ML MoS 2 grown by metalorganic chemical vapor deposition on sapphire using an azimuthal reflection high-energy electron diffraction (ARHEED) technique. With ARHEED we can map not only 2D but also 3D reciprocal space structure of the ML statistically. From the oscillation in the ARHEED intensity profile along the vertical direction of the ML, we derived a real space distance of ~3 Å at the interface of ML and sapphire. Quantitative diffraction spot broadening analyses of the 3D reciprocal space map reveals low density defects and a small angular misalignment of orientation domains in ML MoS 2 . Based on atomic force microscopy height distribution analysis, cross-section scanning transmission electron microscopy, and density functional theory calculations, we suggest that there exists a passivation layer between MoS 2 ML and sapphire substrate. This ARHEED methodology also has been applied to ML WS 2 and is expected to be applicable to other ML transition metal dichalcogenides on arbitrary crystalline or non-crystalline substrates.

materials science, multidisciplinary
Chemical Vapor Deposition of a Single-Crystalline MoS 2 Monolayer through Anisotropic 2D Crystal Growth on Stepped Sapphire Surface

Iryna Kandybka,Benjamin Groven,Henry Medina Silva,Stefanie Sergeant,Ankit Nalin Mehta,Serkan Koylan,Yuanyuan Shi,Sreetama Banerjee,Pierre Morin,Annelies Delabie

DOI: https://doi.org/10.1021/acsnano.3c09364

IF: 17.1

2024-01-19

ACS Nano

Abstract:Recently, a step-flow growth mode has been proposed to break the inherent molybdenum disulfide (MoS(2)) crystal domain bimodality and yield a single-crystalline MoS(2) monolayer on commonly employed sapphire substrates. This work reveals an alternative growth mechanism during the metal-organic chemical vapor deposition (MOCVD) of a single-crystalline MoS(2) monolayer through anisotropic 2D crystal growth. During early growth stages, the epitaxial symmetry and commensurability of sapphire...

materials science, multidisciplinary,chemistry, physical,nanoscience & nanotechnology
Revisiting the Epitaxial Growth Mechanism of 2D TMDC Single Crystals

Chenyang Li,Fangyuan Zheng,Jiacheng Min,Ni Yang,Yu‐Ming Chang,Haomin Liu,Yuxiang Zhang,Pengfei Yang,Qinze Yu,Yu Li,Zhengtang Luo,Areej Aljarb,Kaimin Shih,Jing‐Kai Huang,Lain‐Jong Li,Yi Wan

DOI: https://doi.org/10.1002/adma.202404923

IF: 29.4

2024-08-19

Advanced Materials

Abstract:This study uncovers the pivotal role of sulfur evaporation rates in directing the growth modes of MoS2 on sapphire. Low sulfur levels preserve O/Al‐terminated step edges, fostering atomic‐edge epitaxy, while high sulfur levels favor S‐terminated edges, promoting van der Waals epitaxy. The findings highlight that van der Waals epitaxy achieves superior MoS2 alignment (≈99%) on a 2 in. wafer, offering new insights into precise 2D material fabrication. Epitaxial growth of 2D transition metal dichalcogenides (TMDCs) on sapphire substrates has been recognized as a pivotal method for producing wafer‐scale single‐crystal films. Both step‐edges and symmetry of substrate surfaces have been proposed as controlling factors. However, the underlying fundamental still remains elusive. In this work, through the molybdenum disulfide (MoS2) growth on C/M sapphire, it is demonstrated that controlling the sulfur evaporation rate is crucial for dictating the switch between atomic‐edge guided epitaxy and van der Waals epitaxy. Low‐concentration sulfur condition preserves O/Al‐terminated step edges, fostering atomic‐edge epitaxy, while high‐concentration sulfur leads to S‐terminated edges, preferring van der Waals epitaxy. These experiments reveal that on a 2 in. wafer, the van der Waals epitaxy mechanism achieves better control in MoS2 alignment (≈99%) compared to the step edge mechanism (<85%). These findings shed light on the nuanced role of atomic‐level thermodynamics in controlling nucleation modes of TMDCs, thereby providing a pathway for the precise fabrication of single‐crystal 2D materials on a wafer scale.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Identifying the crystal orientation of epitaxially grown MoO2 nanoflakes on c-sapphire

Junjie Jiang,Dingbang Yang,Yongsong Wang,Xiao Guo,Madoune Yassine,Wenqiang Huang,Tao Xu,Shanshan Wang,Han Huang,Fangping Ouyang,Yongli Gao

DOI: https://doi.org/10.1016/j.apsusc.2022.154983

IF: 6.7

2022-12-01

Applied Surface Science

Abstract:Identifying the crystallographic orientations and understanding the growth mechanism of MoO2 nanocrystals are important for device applications. Here, we investigate the effect of precursor concentrations in chemical vapor deposition on the orientation of MoO2 nanoflakes with respect to the substrate surface. X-ray diffraction, optical microscopy, (tilted) scanning electron microscopy, high resolution transmission electron microscopy, selected area electron diffraction, and angle-resolved polarized Raman spectroscopy were used to determine the crystal orientations of the nanoflakes and their epitaxial relationship with c-sapphire substrates: lying-down MoO2 nanoflakes for MoO2(010)∥sapphire(0001) and MoO2 <001>//sapphire< 1 1 ¯ 00 >, and standing-up ones for MoO2(100)∥sapphire(0001) and MoO2 <001>∥sapphire< 1 1 ¯ 00 >. Tentative atomic epitaxial models are proposed to explain the orientation and alignment. The investigations also demonstrated that angle-resolved polarized Raman spectroscopy is a quick and nondestructive method to identify the crystallographic orientations of nanoflakes.

chemistry, physical,physics, applied, condensed matter,materials science, coatings & films
Single‐Crystal MoS 2 Monolayer Wafer Grown on Au (111) Film Substrates

Jing Li,Shuang Wang,Qi Jiang,Haoji Qian,Shike Hu,He Kang,Chen Chen,Xiaoyi Zhan,Aobo Yu,Sunwen Zhao,Yanhui Zhang,Zhiying Chen,Yanping Sui,Shan Qiao,Guanghui Yu,Songang Peng,Zhi Jin,Xinyu Liu

DOI: https://doi.org/10.1002/smll.202100743

IF: 13.3

2021-06-18

Small

Abstract:Monolayer transition metal dichalcogenides (TMDCs) with high crystalline quality are important channel materials for next-generation electronics. Researches on TMDCs have been accelerated by the development of chemical vapor deposition (CVD). However, antiparallel domains and twin grain boundaries (GBs) usually form in CVD synthesis due to the special threefold symmetry of TMDCs lattices. The existence of GBs severely reduces the electrical and photoelectrical properties of TMDCs, thus restricting their practical applications. Herein, the epitaxial growth of single crystal MoS2 (SC-MoS2) monolayer is reported on Au (111) film across a two-inch c-plane sapphire wafer by CVD. The MoS2 domains obtained on Au (111) film exhibit unidirectional alignment with zigzag edges parallel to the <110> direction of Au (111). Experimental results indicated that the unidirectional growth of MoS2 domains on Au (111) is a temperature-guided epitaxial growth mode. The high growth temperature provides enough energy for the rotation of the MoS2 seeds to find the most favorable orientation on Au (111) to achieve a unidirectional ratio of over 99%. Moreover, the unidirectional MoS2 domains seamlessly stitched into single crystal monolayer without GBs formation. The progress achieved in this work will promote the practical applications of TMDCs in microelectronics.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Epitaxial growth of wafer-scale molybdenum disulfide semiconductor single crystals on sapphire

Taotao Li,Wei Guo,Liang Ma,Weisheng Li,Zhihao Yu,Zhen Han,Si Gao,Lei Liu,Dongxu Fan,Zixuan Wang,Yang Yang,Weiyi Lin,Zhongzhong Luo,Xiaoqing Chen,Ningxuan Dai,Xuecou Tu,Danfeng Pan,Yagang Yao,Peng Wang,Yuefeng Nie,Jinlan Wang,Yi Shi,Xinran Wang

DOI: https://doi.org/10.1038/s41565-021-00963-8

IF: 38.3

2021-09-02

Nature Nanotechnology

Abstract:Two-dimensional (2D) semiconductors, in particular transition metal dichalcogenides (TMDCs), have attracted great interest in extending Moore's law beyond silicon1,2,3. However, despite extensive efforts4,5,6,7,8,9,10,11,12,13,14,15,16,17,18,19,20,21,22,23,24,25, the growth of wafer-scale TMDC single crystals on scalable and industry-compatible substrates has not been well demonstrated. Here we demonstrate the epitaxial growth of 2 inch (~50 mm) monolayer molybdenum disulfide (MoS2) single crystals on a C-plane sapphire. We designed the miscut orientation towards the A axis (C/A) of sapphire, which is perpendicular to the standard substrates. Although the change of miscut orientation does not affect the epitaxial relationship, the resulting step edges break the degeneracy of nucleation energy for the antiparallel MoS2 domains and lead to more than a 99% unidirectional alignment. A set of microscopies, spectroscopies and electrical measurements consistently showed that the MoS2 is single crystalline and has an excellent wafer-scale uniformity. We fabricated field-effect transistors and obtained a mobility of 102.6 cm2 V−1 s−1 and a saturation current of 450 μA μm–1, which are among the highest for monolayer MoS2. A statistical analysis of 160 field-effect transistors over a centimetre scale showed a >94% device yield and a 15% variation in mobility. We further demonstrated the single-crystalline MoSe2 on C/A sapphire. Our method offers a general and scalable route to produce TMDC single crystals towards future electronics.

materials science, multidisciplinary,nanoscience & nanotechnology
Aligned monolayer MoS2 ribbons growth on sapphire substrate via NaOH-assisted chemical vapor deposition

Shike Hu,Jing Li,Xiaoyi Zhan,Shuang Wang,Longbiao Lei,Yijian Liang,He Kang,Yanhui Zhang,Zhiying Chen,Yanping Sui,Da Jiang,Guanghui Yu,Songang Peng,Zhi Jin,Xinyu Liu

DOI: https://doi.org/10.1007/s40843-019-1265-9

2020-03-27

Science China Materials

Abstract:This study reports the growth of aligned monolayer molybdenum disulfide (MoS2) ribbons on a sapphire substrate via NaOH-assisted chemical vapor deposition. The length of MoS2 ribbon is up to 400 μm. The MoS2 ribbon has excellent single crystal properties, a carrier mobility of {150 cm2 V−1 s−1, and a optical response of 103 mA W−1 at a wavelength of 550 nm. The growth model of MoS2 ribbons was given. NaOH reacts with MoO3 to form sodium molybdate droplets, which increase the fluidity of the molybdenum source on the substrate, realizing the vapor–liquid–solid growth of MoS2 on sapphire. The monolayer MoS2 ribbons have two kinds of arrangements on the sapphire substrate, one is the oriented growth affected by the interlayer van der Waals force and the lattice, and the other is the aligned growth constrained by the sapphire step. Our results promote the basic research and device applications of MoS2, and introduce a new way of synthesizing other one dimensional (1D) and 2D nanostructures.

materials science, multidisciplinary
Atomically Thin Decoration Layers for Robust Orientation Control of 2D Transition Metal Dichalcogenides

Yu‐Ming Chang,Ni Yang,Jiacheng Min,Fangyuan Zheng,Chun‐Wei Huang,Jui‐Yuan Chen,Yuxiang Zhang,Pengfei Yang,Chenyang Li,Hao‐Yu Liu,Beilin Ye,Jian‐Bin Xu,Han‐Yi Chen,Zhengtang Luo,Wen‐Wei Wu,Kaimin Shih,Jing‐Kai Huang,Lain‐Jong Li,Yi Wan

DOI: https://doi.org/10.1002/adfm.202311387

IF: 19

2023-11-30

Advanced Functional Materials

Abstract:Transition metal dichalcogenides face challenges of applications in advancing semiconductors. This work demonstrates robust reproducibility in the growth of single‐oriented MoS2 on Fe2O3‐decorated sapphire, achieving a remarkable 99% ratio. Simulations reveal a preferred 0° alignment on the Fe2O3‐(0001) surface, ensuring single‐oriented growth even on mirror‐reflected surfaces. These findings highlight Fe2O3‐decorated sapphires as effective substrates, enabling epitaxial control of TMD orientation. 2D semiconducting transition metal dichalcogenides (TMDs) are emerging as promising candidates in the pursuit of advancing semiconductor technology. One major challenge for integrating 2D TMD materials into practical applications is developing an epitaxial technique with robust reproducibility for single‐oriented growth and thus single‐crystal growth. Here, the growth of single‐orientated MoS2 on c‐plane sapphire with atomically thin Fe2O3 decoration layers under various growth conditions is demonstrated. The statistical data highlight robust reproducibility, achieving a single orientation ratio of up to 99%. Density functional theory calculations suggest that MoS2 favors a 0° alignment ([112 ̄0]//[112 ̄0] ) on the Fe2O3 (0001) surface. This preference ensures single‐oriented growth, even on mirror‐reflected exposed surfaces which typically lead to antiparallel domains. Subsequent optical and electrical analyses confirm the uniformity and undoped nature of MoS2 on Fe2O3‐decorated sapphire, showing its quality is comparable to MoS2 grown on bared sapphires. The results underscore the potential of Fe2O3‐decorated sapphire as an effective substrate for the consistent and high‐quality epitaxial growth of 2D TMDs, illuminating the pathway to epitaxial control of 2D TMD orientation through strategic modulation of crystalline atomic surfaces.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology

Benefit from sealants in a moderately fluoridated community.

Edge Reconstruction-Dependent Growth Kinetics of MoS2

Atomistic Insight into the Epitaxial Growth Mechanism of Single-Crystal Two-Dimensional Transition-Metal Dichalcogenides on Au(111) Substrate

Morphology Engineering in Monolayer MoS2‐WS2 Lateral Heterostructures

Oriented lateral growth of monolayer MoS2 mediated by highly-oriented MoO2 nanorods on sapphire

Effect of Substrate Symmetry on the Orientations of MoS2 Monolayers.

T AILD-like non Hodgkin lymphoma complicated by malignant mesenchymal ocular neoplasia: a case report.

Effect of substrate symmetry on the orientations of MoS 2 monolayers

Substrate Lattice-Guided Seed Formation Controls the Orientation of 2D Transition-Metal Dichalcogenides

Controlled Growth of High-Quality Monolayer Ws2 Layers on Sapphire and Imaging Its Grain Boundary

Wafer-Scale Highly Oriented Monolayer MoS2 with Large Domain Sizes

Monolayer MoS2 on Sapphire: an Azimuthal Reflection High-Energy Electron Diffraction Perspective

Wafer-Scale Highly Oriented Monolayer MoS 2 with Large Domain Sizes

Monolayer MoS 2 on sapphire: an azimuthal reflection high-energy electron diffraction perspective

Chemical Vapor Deposition of a Single-Crystalline MoS 2 Monolayer through Anisotropic 2D Crystal Growth on Stepped Sapphire Surface

Revisiting the Epitaxial Growth Mechanism of 2D TMDC Single Crystals

Identifying the crystal orientation of epitaxially grown MoO2 nanoflakes on c-sapphire

Single‐Crystal MoS 2 Monolayer Wafer Grown on Au (111) Film Substrates

Epitaxial growth of wafer-scale molybdenum disulfide semiconductor single crystals on sapphire

Aligned monolayer MoS2 ribbons growth on sapphire substrate via NaOH-assisted chemical vapor deposition

Atomically Thin Decoration Layers for Robust Orientation Control of 2D Transition Metal Dichalcogenides