Batch fabrication of MoS2 devices directly on growth substrates by step engineering

Lu Li,Yalin Peng,Jinpeng Tian,Fanfan Wu,Xiang Guo,Na Li,Wei Yang,Dongxia Shi,Luojun Du,Guangyu Zhang

DOI: https://doi.org/10.1007/s12274-023-6180-2

IF: 9.9

2023-10-03

Nano Research

Abstract:Monolayer molybdenum disulfide (MoS 2 ) has emerged as one of the most promising channel materials for next-generation nanoelectronics and optoelectronics owing to its atomic thickness, dangling-bond-free flat surface, and high electrical quality. Currently, high-quality monolayer MoS 2 wafers are primarily grown on sapphire substrates incompatible with conventional device fabrication, and thus transfer processes to a suitable substrate are typically required before the device can be processed. Here, we demonstrate the batch production of transfer-free MoS 2 top-gate devices directly on sapphire growth substrates via step engineering. By introducing substrate steps on growth substrate sapphire, high- κ dielectric layers with superior quality and uniform can be directly deposited on the epitaxially grown monolayer MoS 2 . For the substrate with a maximum step density of 100 μm −1 , the gate capacitance can reach ∼ 1.87 μF·cm −2 , while the interface trap state density ( D it ) can be as low as ∼ 7.6 × 10 10 cm −2 ·eV −1 . The direct deposition of high-quality dielectric layers on grown monolayer MoS 2 enables the batch fabrication of top-gate devices devoid of transfer and thus excellent device yield of > 96%, holding great promise for large-scale two-dimensional (2D) integrated circuits.

materials science, multidisciplinary,chemistry, physical,physics, applied,nanoscience & nanotechnology