Abstract:This work reports a high‐reproducible, high‐efficient epitaxial growth method of wafer‐scale (over two inches) monolayer MoS2 single crystals on the industry‐compatible sapphire substrates, by designing a "face‐to‐face" metal‐foil‐based precursor supply route, carbon‐cloth‐filter based precursor concentration decay strategy, and the precise optimization of the chalcogenides and metal precursor ratio. 2D semiconducting transition‐metal dichalcogenides (TMDs) have attracted considerable attention as channel materials for next‐generation transistors. To meet the industry needs, large‐scale production of single‐crystal monolayer TMDs in highly reproducible and energy‐efficient manner is critically significant. Herein, it is reported that the high‐reproducible, high‐efficient epitaxial growth of wafer‐scale monolayer MoS2 single crystals on the industry‐compatible sapphire substrates, by virtue of a deliberately designed "face‐to‐face" metal‐foil‐based precursor supply route, carbon‐cloth‐filter based precursor concentration decay strategy, and the precise optimization of the chalcogenides and metal precursor ratio (i.e., S/Mo ratio). This unique growth design can concurrently guarantee the uniform release, short‐distance transport, and moderate deposition of metal precursor on a wafer‐scale substrate, affording high‐efficient and high‐reproducible growth of wafer‐scale single crystals (over two inches, six times faster than usual). Moreover, the S/Mo precursor ratio is found as a key factor for the epitaxial growth of MoS2 single crystals with rather high crystal quality, as convinced by the relatively high electronic performances of related devices. This work demonstrates a reliable route for the batch production of wafer‐scale single‐crystal 2D materials, thus propelling their practical applications in highly integrated high‐performance nanoelectronics and optoelectronics.

Uniform nucleation and epitaxy of bilayer molybdenum disulfide on sapphire

Epitaxial growth of wafer-scale molybdenum disulfide semiconductor single crystals on sapphire

Molecular Beam Epitaxy Of Highly Crystalline Monolayer Molybdenum Disulfide On Hexagonal Boron Nitride

Direct Chemical Vapor Deposition Growth and Band-Gap Characterization of MoS2/h-BN van der Waals Heterostructures on Au Foils

Synthesis and characterization of uniform 3R phase bilayer MoS 2 on sapphire

Epitaxy of Wafer-Scale Single-Crystal MoS2 Monolayer Via Buffer Layer Control

Epitaxy of wafer-scale bilayer MoS2 thin film for P-N diodes

Batch fabrication of MoS2 devices directly on growth substrates by step engineering

Batch Fabrication of MoS 2 Devices Directly on Growth Substrates by Step Engineering

Wafer-Scale Growth and Transfer of Highly-Oriented Monolayer MoS2 Continuous Films

Revisiting the Epitaxial Growth Mechanism of 2D TMDC Single Crystals

Highly Reproducible Epitaxial Growth of Wafer‐Scale Single‐Crystal Monolayer MoS2 on Sapphire

Importance of the Substrate's Surface Evolution During the MOVPE Growth of 2D-Transition Metal Dichalcogenides.

Eight In. Wafer-Scale Epitaxial Monolayer MoS2

Aligned monolayer MoS2 ribbons growth on sapphire substrate via NaOH-assisted chemical vapor deposition

Top-Down Integration of Molybdenum Disulfide Transistors with Wafer-Scale Uniformity and Layer Controllability.

MoS2-OH Bilayer-Mediated Growth of Inch-Sized Monolayer MoS2 on Arbitrary Substrates

8‐Inch Wafer‐scale Epitaxial Monolayer MoS2

Wafer-scale MOCVD growth of monolayer MoS2 on sapphire and SiO2

12-inch growth of uniform MoS2 monolayer for integrated circuit manufacture

Unidirectional Growth of Molybdenum Dioxide Nanoflakes on C-sapphire Substrate Via Buffer Layer Induction