High-mobility compensated semimetals, orbital magnetization, and umklapp scattering in bilayer graphene moire superlattices

A.L. Shilov,M.A. Kashchenko,P.A. Pantaleón,M. Kravtsov,A. Kudriashov,Z. Zhan,T.Taniguchi,K. Watanabe,S. Slizovskiy,K. S. Novoselov,V.I. Fal'ko,F. Guinea,D.A. Bandurin

DOI: https://doi.org/10.1021/acsnano.3c13212

2023-11-09

Abstract:Twist-controlled moire superlattices (MS) have emerged as a versatile platform in which to realize artificial systems with complex electronic spectra. Bernal-stacked bilayer graphene (BLG) and hexagonal boron nitride (hBN) form an interesting example of the MS that has recently featured a set of unexpected behaviors, such as unconventional ferroelectricity and electronic ratchet effect. Yet, the understanding of the BLG/hBN MS electronic properties has, at present, remained fairly limited. Here we develop a multi-messenger approach that combines standard magnetotransport techniques with low-energy sub-THz excitation to get insights into the properties of this MS. We show that BLG/hBN lattice alignment results in the emergence of compensated semimetals at some integer fillings of the moire bands separated by van Hove singularities where Lifshitz transition occurs. A particularly pronounced semimetal develops when 8 electrons reside in the moire unit cell, where coexisting high-mobility electron and hole systems feature a strong magnetoresistance reaching 2350 % already at B=0.25 T. Next, by measuring the THz-driven Nernst effect in remote bands, we observe valley splitting, pointing to an orbital magnetization characterized by a strongly enhanced effective g-factor of 340. Last, using THz photoresistance measurements, we show that the high-temperature conductivity of the BLG/hBN MS is limited by electron-electron umklapp processes. Our multi-facet analysis introduces THz-driven magnetotransport as a convenient tool to probe the band structure and interaction effects in vdW materials and provides a comprehension of the BLG/hBN MS.

Mesoscale and Nanoscale Physics

What problem does this paper attempt to address?

The problems that this paper attempts to solve are: understanding the electronic properties of the moiré superlattice (MS) formed by bilayer graphene (BLG) and hexagonal boron nitride (hBN), especially the properties of its remote energy bands. Although many interesting phenomena have been observed in the moiré superlattice formed by monolayer graphene (MLG) and hBN, relatively few studies have been conducted on the electronic properties of the BLG/hBN structure. In particular, there are challenges in the preparation of highly aligned, low - disorder samples.

Specifically, this paper aims to:
1. **Reveal the compensated half - metal state**: It has been experimentally discovered that there are compensated half - metal states separated by van Hove singularities between some integer - filled moiré bands. In particular, when there are 8 electrons in each moiré unit, this half - metal state is particularly significant, showing a huge magnetoresistance effect (2350%), even under a low magnetic field (B = 0.25 T).

2. **Detect orbital magnetization and valley splitting**: By measuring the terahertz - driven Nernst effect, a huge valley splitting has been observed at n/n₀ = - 6, indicating the existence of strong orbital magnetization with an effective g - factor as high as 340.

3. **Analyze high - temperature conductivity and Umklapp scattering**: Using terahertz photoresistance measurements, it has been revealed that the conductivity of the BLG/hBN moiré superlattice at high temperatures is mainly limited by the electron - electron Umklapp scattering process.

To achieve these goals, the authors adopted a multi - messenger approach, combining standard magnetic transport techniques and low - energy sub - terahertz excitation to deeply explore the electronic properties of the BLG/hBN moiré superlattice. This method can not only provide detailed information about the band structure and interaction effects but also provides a new tool for studying complex physical phenomena in two - dimensional materials.

### Formula summary
- **Seebeck and Nernst effect formulas**:
\[
V_{SB}/D(E)\propto\rho_{xx}\frac{d\sigma_{xx}}{dn}+\rho_{xy}\frac{d\sigma_{yx}}{dn}
\]
\[
V_{NR}/D(E)\propto\rho_{xx}\frac{d\sigma_{xy}}{dn}+\rho_{xy}\frac{d\sigma_{xx}}{dn}
\]

- **g - factor calculation**:
\[
\Delta E = 2mB = g_v\mu_BB
\]
\[
m=\frac{g_v\mu_B}{2}=170\mu_B
\]

These formulas help explain the phenomena observed in the experiment and provide theoretical support.