High-mobility compensated semimetals, orbital magnetization, and umklapp scattering in bilayer graphene moire superlattices

A.L. Shilov,M.A. Kashchenko,P.A. Pantaleón,M. Kravtsov,A. Kudriashov,Z. Zhan,T.Taniguchi,K. Watanabe,S. Slizovskiy,K. S. Novoselov,V.I. Fal'ko,F. Guinea,D.A. Bandurin

DOI: https://doi.org/10.1021/acsnano.3c13212

2023-11-09

Abstract:Twist-controlled moire superlattices (MS) have emerged as a versatile platform in which to realize artificial systems with complex electronic spectra. Bernal-stacked bilayer graphene (BLG) and hexagonal boron nitride (hBN) form an interesting example of the MS that has recently featured a set of unexpected behaviors, such as unconventional ferroelectricity and electronic ratchet effect. Yet, the understanding of the BLG/hBN MS electronic properties has, at present, remained fairly limited. Here we develop a multi-messenger approach that combines standard magnetotransport techniques with low-energy sub-THz excitation to get insights into the properties of this MS. We show that BLG/hBN lattice alignment results in the emergence of compensated semimetals at some integer fillings of the moire bands separated by van Hove singularities where Lifshitz transition occurs. A particularly pronounced semimetal develops when 8 electrons reside in the moire unit cell, where coexisting high-mobility electron and hole systems feature a strong magnetoresistance reaching 2350 % already at B=0.25 T. Next, by measuring the THz-driven Nernst effect in remote bands, we observe valley splitting, pointing to an orbital magnetization characterized by a strongly enhanced effective g-factor of 340. Last, using THz photoresistance measurements, we show that the high-temperature conductivity of the BLG/hBN MS is limited by electron-electron umklapp processes. Our multi-facet analysis introduces THz-driven magnetotransport as a convenient tool to probe the band structure and interaction effects in vdW materials and provides a comprehension of the BLG/hBN MS.

Mesoscale and Nanoscale Physics