Controlling Umklapp scattering in bilayer graphene moir'e superlattice

Mohit Kumar Jat,Shubhankar Mishra,Harsimran Kaur Mann,Robin Bajaj,Kenji Watanabe,Takashi Taniguchi,H. R. Krishnamurthy,Manish Jain,Aveek Bid

DOI: https://doi.org/10.1021/acs.nanolett.3c04223

2024-02-15

Abstract:In this Letter, we present experimental findings on electron-electron scattering in a two-dimensional moir'e heterostructure with tunable Fermi wave vector, reciprocal lattice vector, and band gap. We achieve this in high-mobility aligned heterostructures of bilayer graphene (BLG) and hBN. Around half-filling, the primary contribution to the resistance of BLG/hBN aligned superlattices arises from electron-electron Umklapp (Uee) scattering, making the resistance of graphene/hBN moir'e devices significantly larger than that of non-aligned devices (where Uee is forbidden). We quantify the strength of the Uee scattering and find that it follows a universal scaling with Fermi energy and has a non-monotonic dependence on the charge carrier density. The Uee scattering is strongly electric field tunable and affected by layer-polarization of BLG. It has a strong particle-hole asymmetry - the resistance when the chemical potential is in the conduction band is significantly lesser than when it is in the valence band, making the electron-doped regime more practical for potential applications.

Mesoscale and Nanoscale Physics,Materials Science

What problem does this paper attempt to address?

### What problems does this paper attempt to solve?

This paper aims to study and control the Umklapp scattering of electron - electron in the moiré superlattice formed by bilayer graphene (BLG) and hexagonal boron nitride (hBN). Specifically, the authors focus on the following issues:

1. **Understanding the Umklapp scattering mechanism**:
- In the bilayer graphene/hBN moiré superlattice, Umklapp scattering is one of the main mechanisms causing resistance. This scattering process allows momentum to be transferred from electrons to the lattice, thus endowing the material with electrical resistance.
- How does the intensity of Umklapp scattering change with factors such as Fermi energy, superlattice period, and applied electric field?

2. **Experimental verification of theoretical predictions**:
- Theoretical predictions indicate that in the aligned BLG/hBN heterostructure, Umklapp scattering should be the main source of resistance. The authors verified this prediction through experiments and demonstrated the behavior of Umklapp scattering under different conditions.
- Verify whether the change of Umklapp scattering intensity with Fermi energy follows the relationship of \( f_n \propto E_F^{-2} \).

3. **Exploring the possibility of electric - field regulation**:
- It has been found that the intensity of Umklapp scattering can be adjusted by an external vertical electric field. This provides a potential means for precisely controlling the electronic properties of bilayer graphene superlattices.
- Explore the influence of inter - layer polarization on Umklapp scattering, especially its performance under different carrier densities.

4. **Comparing the behavior of different systems**:
- Comparing the aligned and non - aligned BLG/hBN devices, it is found that Umklapp scattering is prohibited in non - aligned devices, while it is significantly present in aligned devices.
- Comparing the Umklapp scattering behavior in single - layer graphene (SLG)/hBN and bilayer graphene/hBN moiré superlattices, it is found that there are significant differences in superlattice period dependence between the two.

5. **Discussing the practical application prospects**:
- Emphasize the great potential of bilayer graphene/hBN moiré superlattices in room - temperature applications, especially due to their strong electric - field tunability and band - gap regulation ability.

Through these studies, the authors hope to reveal the basic physical mechanism of Umklapp scattering in two - dimensional moiré heterostructures and provide theoretical and experimental bases for the design of high - performance electronic devices in the future.

### Formula summary

- The momentum conservation condition for Umklapp scattering:
\[
k_1 + k_2 = k_3 + k_4 + G
\]
where \( \hbar k_1, \hbar k_2 \) and \( \hbar k_3, \hbar k_4 \) are the quasi - momenta of electrons before and after the interaction respectively, and \( G \) is a non - zero reciprocal lattice vector.

- The contribution of Umklapp scattering to sheet resistance:
\[
R_{\square}^{Uee} = f_n T^2
\]
where \( f_n \propto E_F^{-2} \), and \( E_F \) is the Fermi energy.

- The proportional relationship in phenomenological treatment:
\[
f_n \propto \frac{\hbar}{e^2} \left( \frac{k_B}{E_F} \right)^2
\]

These formulas and experimental results together reveal the important role of Umklapp scattering in bilayer graphene/hBN moiré superlattices and its regulation methods.