Abstract:Interfacial coupling between neighboring layers of van der Waals heterostructures (vdWHs), formed by vertically stacking more than two types of two-dimensional materials (2DMs), greatly affects their physical properties and device performance. Although high-resolution cross-sectional scanning tunneling electron microscopy can directly image the atomically sharp interfaces in the vdWHs, the interfacial coupling and lattice dynamics of vdWHs formed by two different types of 2DMs, such as semimetal and semiconductor, are not clear so far. Here, we report the ultralow-frequency Raman spectroscopy investigation on interfacial couplings in the vdWHs formed by graphene and MoS2 flakes. Because of the significant interfacial layer-breathing couplings between MoS2 and graphene flakes, a series of layer-breathing modes with frequencies dependent on their layer numbers are observed in the vdWHs, which can be described by the linear chain model. It is found that the interfacial layer-breathing force constant between MoS2 and graphene, α0⊥(I) = 60 × 1018 N/m3, is comparable with the layer-breathing force constant of multilayer MoS2 and graphene. The results suggest that the interfacial layer-breathing couplings in the vdWHs formed by MoS2 and graphene flakes are not sensitive to their stacking order and twist angle between the two constituents. Our results demonstrate that the interfacial interlayer coupling in vdWHs formed by two-dimensional semimetals and semiconductors can lead to new lattice vibration modes, which not only can be used to measure the interfacial interactions in vdWHs but also is beneficial to fundamentally understand the properties of vdWHs for further engineering the vdWHs-based electronic and photonic devices.

Observation of interlayer phonon modes in van der Waals heterostructures

Interlayer couplings, Moiré patterns, and 2D electronic superlattices in MoS2/WSe2 hetero-bilayers.

Multifarious Interfaces, Band Alignments, and Formation Asymmetry of WSe2-MoSe2 Heterojunction Grown by Molecular-Beam Epitaxy.

Interfacial Interactions in Van Der Waals Heterostructures of MoS2 and Graphene

Interlayer breathing and shear modes in few-trilayer MoS2 and WSe2

Raman modes of MoS2 used as fingerprint of van der Waals interactions in 2-D crystal-based heterostructures.

Understanding Interlayer Coupling in TMD-hBN Heterostructure by Raman Spectroscopy

Temperature-Dependent Phonon Scattering and Photoluminescence in Vertical MoS2/WSe2 Heterostructures

Raman scattering investigation of twisted WS2/MoS2 heterostructures: interlayer mechanical coupling versus charge transfer

Phonon and Exciton Properties between WS 2 and MoS 2 Layers via Inversion Heterostructure Engineering

Temporally probing the thermal phonon and charge transfer induced out-of-plane acoustical displacement of monolayer and bi-layer MoS 2 /GaN heterojunction

Enhanced Layer-Breathing Modes in van der Waals Heterostructures Based on Twisted Bilayer Graphene

Low-energy moiré phonons in twisted bilayer van der Waals heterostructures

Title : Observation of Long-Lived Interlayer Excitons in Monolayer MoSe 2-WSe 2 Heterostructures

Spectroscopic Signatures of Interlayer Coupling in Janus MoSSe/MoS2 Heterostructures

Lattice Vibrations and Raman Scattering in Two-Dimensional Layered Materials Beyond Graphene

Moiré Phonons in Twisted Bilayer MoS2

Interlayer Exciton-Phonon Coupling in MoSe2/WSe2 Heterostructures

Probing the inter-layer exciton physics in a MoS$_2$/MoSe$_2$/MoS$_2$ van der Waals heterostructure

Modification of Interlayer Interaction in Bilayer MoS2 due to Monolayer WSe2 in Heterostructures

Superposition of intra- and inter-layer excitons in twistronic MoSe$_2$/WSe$_2$ bilayers probed by resonant Raman scattering