Chemical properties of commercially available honey species and the functional properties of caramelization and Maillard reaction products derived from these honey species

T. Nagai,T. Nagai,T. Nagai,N. Kai,Y. Tanoue,Nobutaka Suzuki

DOI: https://doi.org/10.1007/s13197-017-2968-y

2018-02-01

Journal of Food Science and Technology

Abstract:

What problem does this paper attempt to address?

Analysis of the Electrical Properties and Current Transportation Mechanism of a Metal Oxide Semiconductor (MOS) Capacitor Based on HfGdO Gate Dielectrics

S. S. Jiang,G. He,Z. B. Fang,P. H. Wang,Y. M. Liu,J. G. Lv,M. Liu

DOI: https://doi.org/10.1016/j.jallcom.2018.05.091

IF: 6.2

2018-01-01

Journal of Alloys and Compounds

Abstract:The microstructure, optical and electrical properties of sputtering-derived HfGdO high-k gate dielectric thin films as a function of the Gd doping content have been systematically investigated. X-ray diffraction (XRD) measurements have indicated that Gd doping can form a new stable cubic phase. The optical band gap of the HfGdO gate dielectrics increases gradually from 5.82 to 6.14 eV as the Gd doping concentration increases. The electrical properties, such as permittivity, oxide trapped charge density, border trap charge density and leakage current density of samples, are determined using a semiconductor device analyzer. The formation mechanism of leakage current is also discussed in detail. In addition, the interfacial properties of HfGdO/Si gate satcks were tested to establish the electrical properties. The excellent optoelectronic properties, such as the optical band gap of 5.95 eV, leakage current density of 8.33 x 10(-8) A/cm(2) at a bias voltage of 2 V, oxide trapped charge density of -1.06 x 10(12) cm(-2) and a border trap charge density of zero and optimized interfacial properties were observed in the HfGdO thin films with sputtering power of 30 W, indicating that it may become a potential high-k gate dielectric in future complementary metal oxide semiconductor (CMOS) devices. (C) 2018 Elsevier B.V. All rights reserved.
Interface States in Gate Stack of Carbon Nanotube Array Transistors.

Yifan Liu,Sujuan Ding,Weili Li,Zirui Zhang,Zipeng Pan,Yumeng Ze,Bing Gao,Yanning Zhang,Chuanhong Jin,Lian-Mao Peng,Zhiyong Zhang

DOI: https://doi.org/10.1021/acsnano.4c03989

IF: 17.1

2024-01-01

ACS Nano

Abstract:A deep understanding of the interface states in metal-oxide-semiconductor (MOS) structures is the premise of improving the gate stack quality, which sets the foundation for building field-effect transistors (FETs) with high performance and high reliability. Although MOSFETs built on aligned semiconducting carbon nanotube (A-CNT) arrays have been considered ideal energy-efficient successors to commercial silicon (Si) transistors, research on the interface states of A-CNT MOS devices, let alone their optimization, is lacking. Here, we fabricate MOS capacitors based on an A-CNT array with a well-designed layout and accurately measure the capacitance-voltage and conductance-voltage (C-V and G-V) data. Then, the gate electrostatics and the physical origins of interface states are systematically analyzed and revealed. In particular, targeted improvement of gate dielectric growth in the A-CNT MOS device contributes to suppressing the interface state density (D-it) to 6.1 x 10(11) cm(-2) eV(-1), which is a record for CNT- or low-dimensional semiconductors-based MOSFETs, boosting a record transconductance (g(m)) of 2.42 mS/mu m and an on-off ratio of 10(5). Further decreasing D-it below 1 x 10(11) cm(-2) eV(-1) is necessary for A-CNT MOSFETs to achieve the expected high energy efficiency.
Band tail interface states and quantum capacitance in a monolayer molybdenum disulfide field-effect-transistor

Nan Fang,Kosuke Nagashio

DOI: https://doi.org/10.1088/1361-6463/aaa58c

2018-01-31

Abstract:Although MoS2 field-effect transistors (FETs) with high-k dielectrics are promising for electron device applications, the underlying physical origin of interface degradation remains largely unexplored. Here, we present a systematic analysis of the energy distribution of the interface state density (Dit) and the quantum capacitance (CQ) in a dual-gate monolayer exfoliated MoS2 FET. The CQ analysis enabled us to construct a Dit extraction method as a function of EF. A band tail distribution of Dit with the lowest value of 8*1011 cm-2eV-1 suggests that Dit is not directly related to the sharp peak energy distribution of the S vacancy. Therefore, the Mo-S bond bending related to the strain at the interface or the surface roughness of the SiO2/Si substrate might be the origin. It is also shown that ultra-thin 2D materials are more sensitive to interface disorder due to the reduced density of states. Since all the constituents for the measured capacitance are well understood, I-V characteristics can be reproduced by utilizing the drift current model. As a result, one of the physical origins of the metal/insulator transition is suggested to be the external outcome of interface traps and quantum capacitance.

Materials Science
Unraveling the Different Charge Storage Mechanism in T and H Phases of MoS2

Bao Zhang,Xiao Ji,Kui Xu,Chi Chen,Xiong,Junlin Xiong,Yifeng Yao,Ling Miao,Jianjun Jiang

DOI: https://doi.org/10.1016/j.electacta.2016.09.059

IF: 6.6

2016-01-01

Electrochimica Acta

Abstract:Two-dimensional MoS2 is a promising candidate for high performance electrochemical capacitors. However, the understanding of different capacitive performances of MoS2 with different phases is still limited. Herein, the pseudocapacitive and electrical double layer characters in T and H phases of MoS2 monolayer are systematically studied, by using first-principles calculations and molecular dynamic simulations. The electronic levels referenced to the vacuum level are utilized to discuss the intrinsic pseudocapacitive characters. The large density of states of T-MoS2 located at 0.25 V versus the standard hydrogen electrode indicates possible redox pseudocapacitance. Contrastively, the large band gap of H-MoS2 limits its pseudocapacitive behavior. Furthermore, the reaction with the Li atom is employed to shed more light on the possible redox behavior. The different shifts of Fermi levels in H and T phase confirm their different capacitive properties. Moreover, the electrical double layer capacitances character of MoS2 in aqueous solution is also investigated. The H-MoS2 exhibits similar double layer character with T-MoS2. The calculated double layer capacitances of MoS2 are comparable with graphene, and can reach 9.07 mu F/cm(2) and 7.42 mu F/cm(2) for anode and cathode, respectively. The combined calculations shed more light to explore other two-dimensional transition-metal dichalcogenides as supercapacitors electrode materials. (C) 2016 Elsevier Ltd. All rights reserved.
Effect of Dielectric Interface on the Performance of MoS2 Transistors.

Xuefei Li,Xiong,Tiaoyang Li,Sichao Li,Zhenfeng Zhang,Yanqing Wu

DOI: https://doi.org/10.1021/acsami.7b14031

IF: 9.5

2017-01-01

ACS Applied Materials & Interfaces

Abstract:Because of their wide bandgap and ultrathin body properties, two-dimensional materials are currently being pursued for next-generation electronic and optoelectronic applications. Although there have been increasing numbers of studies on improving the performance of MoS2 field-effect transistors (FETs) using various methods, the dielectric interface, which plays a decisive role in determining the mobility, interface traps, and thermal transport of MoS2 FETs, has not been well explored and understood. In this article, we present a comprehensive experimental study on the effect of high-k dielectrics on the performance of few-layer MoS2 FETs from 300 to 4.3 K. Results show that Al2O3/HfO2 could boost the mobility and drain current. Meanwhile, MoS2 transistors with Al2O3/HfO2 demonstrate a 2× reduction in oxide trap density compared to that of the devices with the conventional SiO2 substrate. Also, we observe a negative differential resistance effect on the device with 1 μm-channel length when using conventional SiO2 as the gate dielectric due to self-heating, and this is effectively eliminated by using the Al2O3/HfO2 gate dielectric. This dielectric engineering provides a highly viable route to realizing high-performance transition metal dichalcogenide-based FETs.
Performance and stability improvement of CVD monolayer MoS2 transistors through HfO2 dielectrics engineering

Chunhui Huang,Zeyi Yan,Chengwei Hu,Xiong Xiong,Yanqing Wu

DOI: https://doi.org/10.1063/5.0157416

IF: 4

2023-08-14

Applied Physics Letters

Abstract:Monolayer molybdenum disulfide (MoS2) is a promising semiconductor channel material for future electronics due to its atomic thickness and high mobility. However, conventional back-gate MoS2 transistors suffer from substantial scattering caused by substrate and surface adsorbates, which impair carrier mobility and device reliability. In this work, we demonstrate an exemplary dielectric engineering approach that uses atomic-layer-deposited hafnium oxide (HfO2) as the gate dielectric and channel passivation layer to improve device performance and positive bias instability. The large-single-crystal monolayer MoS2 film was directly synthesized on SiO2/Si substrates by a low-pressure chemical vapor deposition method. MoS2 transistors with various dielectrics were fabricated and characterized for a fair comparison. The mobility increased from 4.2 to 19.9 cm2/V·s by suppressing charged impurities and phonon scattering when transferring the MoS2 channel from 100 nm SiO2 substrates to 20 nm HfO2 substrates. Passivation of another 10 nm HfO2 on the back-gate transistors further increased the mobility to 36.4 cm2/V·s with a high drive current of 107 μA/μm. Moreover, the threshold voltage shift of the passivated transistor was reduced by about 58% from 1.9 to 0.8 V under positive bias stress. This is due to the fact that channel passivation with HfO2 effectively eliminated charge trapping of adsorbed substances. These results reveal that HfO2 gate dielectric and passivation by atomic-layer deposition are effective methods to improve the performance and stability of MoS2 devices.

physics, applied
Defects Induced Charge Trapping/Detrapping and Hysteresis Phenomenon in MoS2 Field-Effect Transistors: Mechanism Revealed by Anharmonic Marcus Charge Transfer Theory

Xiaolei Ma,Yue-Yang Liu,Lang Zeng,Jiezhi Chen,Runsheng Wang,Wang,Yanqing Wu,Xiangwei Jiang

DOI: https://doi.org/10.1021/acsami.1c16884

IF: 9.5

2021-01-01

ACS Applied Materials & Interfaces

Abstract:One critical problem inhibiting the application of MoS2 field-effect transistors (FETs) is the hysteresis in their transfer characteristics, which is typically associated with charge trapping (CT) and charge detrapping (CDT) induced by atomic defects at the MoS2-dielectric interface. Here, we propose a novel atomistic framework to simulate electronic processes across the MoS2-SiO2 interface, demonstrating the distinct CT/CDT behavior of different types of atomic defects and further revealing the defect type(s) that most likely cause hysteresis. An anharmonic approximation of the classical Marcus theory is developed and combined with state-of-the-art density functional theory to calculate the gate bias-dependent CT/CDT rates. All the key electronic quantities are calculated with Heyd-Scuseria-Ernzerhof hybrid functionals. The results show that single Si-dangling bond defects are active electron trapping centers. Single O-dangling bond defects are active hole trapping centers, which are more likely to be responsible for the hysteresis phenomenon due to their significant CT rate and apparent threshold voltage shift. In contrast, double Si-dangling bond defects are not active trap centers. These findings provide fundamental physical insights for understanding the hysteresis behavior of MoS2 FETs and provide vital support for understanding and solving the reliability of nanoscale devices.
Approaching Ohmic Contacts for Ideal Monolayer MoS2 Transistors Through Sulfur-Vacancy Engineering

Jiankun Xiao,Kuanglei Chen,Xiankun Zhang,Xiaozhi Liu,Huihui Yu,Li Gao,Mengyu Hong,Lin Gu,Zheng Zhang,Yue Zhang

DOI: https://doi.org/10.1002/smtd.202300611

IF: 12.4

Small Methods

Abstract:Field-effect transistors (FETs) made of monolayer 2D semiconductors (e.g., MoS2 ) are among the basis of the future modern wafer chip industry. However, unusually high contact resistances at the metal-semiconductor interfaces have seriously limited the improvement of monolayer 2D semiconductor FETs so far. Here, a high-scale processable strategy is reported to achieve ohmic contact between the metal and monolayer MoS2 with a large number of sulfur vacancies (SVs) by using simple sulfur-vacancy engineering. Due to the successful doping of the contact regions by introducing SVs, the contact resistance of monolayer MoS2 FET is as low as 1.7 kΩ·µm. This low contact resistance enables high-performance MoS2 FETs with ultrahigh carrier mobility of 153 cm2 V-1 s-1 , a large on/off ratio of 4 × 109 , and high saturation current of 342 µA µm-1 . With the comprehensive investigation of different SV concentrations by adjusting the plasma duration, it is also demonstrated that the SV-increased electron doping, with its resulting reduced Schottky barrier, is the dominant factor driving enhanced electrical performance. The work provides a simple method to promote the development of industrialized atomically thin integrated circuits.
Defects Induced Charge Trapping/Detrapping and Hysteresis Phenomenon in MoS 2 Field-Effect Transistors: Mechanism Revealed by Anharmonic Marcus Charge Transfer Theory

Xiaolei Ma,Yue-Yang Liu,Lang Zeng,Jiezhi Chen,Runsheng Wang,Lin-Wang Wang,Yanqing Wu,Xiangwei Jiang

DOI: https://doi.org/10.1021/acsami.1c16884

2021-12-21

Abstract:One critical problem inhibiting the application of MoS2 field-effect transistors (FETs) is the hysteresis in their transfer characteristics, which is typically associated with charge trapping (CT) and charge detrapping (CDT) induced by atomic defects at the MoS2-dielectric interface. Here, we propose a novel atomistic framework to simulate electronic processes across the MoS2-SiO2 interface, demonstrating the distinct CT/CDT behavior of different types of atomic defects and further revealing the defect type(s) that most likely cause hysteresis. An anharmonic approximation of the classical Marcus theory is developed and combined with state-of-the-art density functional theory to calculate the gate bias-dependent CT/CDT rates. All the key electronic quantities are calculated with Heyd-Scuseria-Ernzerhof hybrid functionals. The results show that single Si-dangling bond defects are active electron trapping centers. Single O-dangling bond defects are active hole trapping centers, which are more likely to be responsible for the hysteresis phenomenon due to their significant CT rate and apparent threshold voltage shift. In contrast, double Si-dangling bond defects are not active trap centers. These findings provide fundamental physical insights for understanding the hysteresis behavior of MoS2 FETs and provide vital support for understanding and solving the reliability of nanoscale devices.

materials science, multidisciplinary,nanoscience & nanotechnology
Probing the Layer-Dependent Behavior of Electronic Properties and Quantum Capacitance in 2H MoS 2 : A Computational Analysis with Emphasis on Mechanical Stability

M Keerthana,Fidha Azees NM,Simran Kour,A. L. Sharma

DOI: https://doi.org/10.2139/ssrn.4888983

IF: 4.778

2024-08-29

Materials Chemistry and Physics

Abstract:The quest for clean, sustainable energy sources was prompted by the fast depletion of fossil fuels and the world's expanding energy requirements. To store renewable energy, it is important that effective energy storage devices such as supercapacitor be manufactured. offer a promising avenue for fast-charging, energy storage, and long-life cycles but maximizing their energy density remains a problem. This study theoretically explores the intrinsic Quantum capacitance ( of MoS 2 in the 2H phase with a few number of layers and how factors like electronic structure and density of states influence its capacitance behavior. In the present work, the first principles analysis utilizing computational modelling with Density Functional Theory (DFT) has been employed to investigate the and surface charge density (σ) of MoS 2 . By explaining the connection between MoS 2 's electrical and structural properties with its , valuable insights for optimizing it's performance were obtained. Both the density of states (DOS) and the increase with the number of layers. Among the observed structures the highest value of is observed for the three layered structure of 2H-MoS 2 (2H3L-MoS 2 ) at +1 V which is 1615.14 μF cm -2 . Investigating the mechanical stability of optimized structure (2H3L-MoS 2 ), a high Young's modulus of 180.46 GPa is observed for 2H3L structure. Hence, 2H-phase of MoS 2 can be used as an excellent anode material for asymmetric and flexible electronic devices.

materials science, multidisciplinary
Ecosystem Services Modeling as a Tool for Defining Priority Areas for Conservation

G. T. Duarte,M. Ribeiro,A. Paglia

DOI: https://doi.org/10.1371/journal.pone.0154573

IF: 3.7

2016-05-04

PLoS ONE

Abstract:Conservationists often have difficulty obtaining financial and social support for protected areas that do not demonstrate their benefits for society. Therefore, ecosystem services have gained importance in conservation science in the last decade, as these services provide further justification for appropriate management and conservation of natural systems. We used InVEST software and a set of GIS procedures to quantify, spatialize and evaluated the overlap between ecosystem services—carbon stock and sediment retention—and a biodiversity proxy–habitat quality. In addition, we proposed a method that serves as an initial approach of a priority areas selection process. The method considers the synergism between ecosystem services and biodiversity conservation. Our study region is the Iron Quadrangle, an important Brazilian mining province and a conservation priority area located in the interface of two biodiversity hotspots, the Cerrado and Atlantic Forest biomes. The resultant priority area for the maintenance of the highest values of ecosystem services and habitat quality was about 13% of the study area. Among those priority areas, 30% are already within established strictly protected areas, and 12% are in sustainable use protected areas. Following the transparent and highly replicable method we proposed in this study, conservation planners can better determine which areas fulfill multiple goals and can locate the trade-offs in the landscape. We also gave a step towards the improvement of the habitat quality model with a topography parameter. In areas of very rugged topography, we have to consider geomorfometric barriers for anthropogenic impacts and for species movement and we must think beyond the linear distances. Moreover, we used a model that considers the tree mortality caused by edge effects in the estimation of carbon stock. We found low spatial congruence among the modeled services, mostly because of the pattern of sediment retention distribution.
High-performance MoS2/p+-Si heterojunction field-effect transistors by interface modulation

Yoonsok Kim,Taeyoung Kim,Eun Kyu Kim

DOI: https://doi.org/10.1007/s12274-022-4263-0

IF: 9.9

2022-04-30

Nano Research

Abstract:Molybdenum disulfide (MoS2), one of transition metal dichalcogenides, is a promising semiconductor material for electronic or optoelectronic devices due to its favorably electronic properties. However, in metal-oxide semiconductor field-effect transistor (MOSFET) structures using MoS2, electrical performances such as mobility and subthreshold swing are suppressed by the interface trap density between the channel and dielectric layers. Moreover, the electrical stability of such structures is compromised due to interface traps and that can be analyzed such as current hysteresis and transient characteristics. Here, we demonstrate MoS2 heterojunction field-effect transistors (HFET) by applying MoS2/p+-Si heterojunctions and achieve high performance characteristics, including a mobility of 636.19 cm2/(V·s), a subthreshold swing of 67.4 mV/dec, minimal hysteresis of 0.05 V, and minimized transient characteristics. However, the HFET devices with varying the channel length demonstrated degradation of electrical performance with increasing the overlap area of the channel and dielectric layers. These results regarding MoS2/p+-Si HFETs resulted in the structural optimization of high-performance electronic devices for practical applications.

materials science, multidisciplinary,chemistry, physical,physics, applied,nanoscience & nanotechnology
Bandgap and doping effects in MoS2 measured by Scanning Tunneling Microscopy and Spectroscopy

Chih-Pin Lu,Guohong Li,Jinhai Mao,Li-Min Wang,Eva Y. Andrei

DOI: https://doi.org/10.48550/arXiv.1405.2367

2014-05-09

Mesoscale and Nanoscale Physics

Abstract:The discovery of graphene has put the spotlight on other layered materials including transition metal dichalcogenites (TMD) as building blocks for novel heterostructures assembled from stacked atomic layers. Molybdenum disulfide, MoS2, a semiconductor in the TMD family, with its remarkable thermal and chemical stability and high mobility, has emerged as a promising candidate for post-silicon applications such as switching, photonics, and flexible electronics. Since these rely on controlling the position of the Fermi energy (EF), it is crucial to understand its dependence on doping and gating. Here we employed scanning tunneling microscopy (STM) and spectroscopy (STS) with gating capabilities to measure the bandgap and the position of EF in MoS2, and to track its evolution with gate voltage. For bulk samples, the measured bandgap (~1.3eV) is comparable to the value obtained by photoluminescence, and the position of EF (~0.35eV) below the conduction band, is consistent with n-doping reported in this material. Using topography together with spectroscopy we traced the source of the n-doping in bulk MoS2 samples to point defects, which we attribute to S vacancies. In contrast, for thin films deposited on SiO2, we found significantly higher levels of n-doping that cannot be attributed to S vacancies. By combining gated STS with transport measurements in a field effect transistor (FET) configuration, we demonstrate that the higher levels of n-doping in thin film samples is due to charge traps at the sample-substrate interface.
Electrical Characterization of HfO2/4H-SiC and HfO2/Si MOS Structures

Xi-Rui Wang,Jie Zhang,Hong-Ping Ma,Qing-Chun Zhang

DOI: https://doi.org/10.1109/sslchinaifws57942.2023.10071123

2022-01-01

Abstract:As the device size continues to shrink, the gate oxygen layer in MOS devices continues to become thinner, which leads to problems such as increased leakage current in conventional Si MOS devices. SiC, an important semiconductor material used in high-power devices, is not immune to the problem of premature breakdown due to the gate oxygen layer. Based on this, this paper adopts the innovative approach of replacing the conventional SiO 2 as the gate oxygen layer with the high-k material, hafnium dioxide (HfO 2 ), and continues the in-depth study on the electrical characteristics of the gate oxygen structure. In this paper, hafnium dioxide (HfO 2 ) thin films were deposited on SiC and Si substrates using the atomic layer deposition(ALD) method. The metal-insulated semiconductor (MIS) structures with Al as the upper and lower electrodes were prepared, and the leakage currents and breakdown voltage characteristics of the MOS capacitors on the two different substrates were investigated. The leakage current density of the MOS capacitor structure with SiC substrate is 10 -11 A/cm 2 ,and the breakdown voltage is about 32 V. Based on the capacitance-voltage (C-V) measurements, the frequency dependence of the movable charge at the interface of the MOS capacitor structure is investigated. The lowest interfacial defect density (D it ) of the MOS capacitive structure with SiC substrate is only of the order of 10 10 eV -1 cm -2 , while the movable charge N eff of the oxide layer of this sample is also controlled to the order of 10 13 cm -2 . It is worth mentioning that the HfO 2 /SiC structure performs better than the HfO 2 /Si structure in these electrical parameters, and the sample designed in this paper also performs better in electrical parameters than previous studies. These results undoubtedly demonstrate that the combination of High-k material (HfO 2 ) and SiC in the MOS gate oxygen layer is a promising research topic.
Simultaneous electric dipoles and flat-band voltage modulation in 4H-SiC MOS capacitors through HfO2/SiO2 interface engineering

Xinwei Wang,Shubo Wei,Huihuang Ke,Xiaofeng Ye,Hongjin Weng,Shen Yuong Wong,Yang Weifeng

DOI: https://doi.org/10.1088/1361-6463/ad5213

2024-06-01

Journal of Physics D Applied Physics

Abstract:We report a novel approach to simultaneously tune electric dipoles and flat-band voltage (VFB) of 4H-SiC metal-oxide-semiconductor (MOS) capacitors through high-k oxide dielectrics interface engineering. With an additional HfO2 thin layer on in-situ atomic layer deposition (ALD) of SiO2 film, a dipole layer was formed at the HfO2/SiO2 interface, leading to a small positive shift VFB of 0.37 V in 4H-SiC MOS capacitors. Kelvin probe method was used to examine the dipole layers induced at the direct-contact oxides/4H-SiC interfaces. It was found that a minor difference of 0.3 V in contact-potential-difference voltage (VCPD) is observed between the SiO2/4H-SiC and HfO2/SiO2/4H-SiC stacks, which signifies the presence of a weak interface dipole layer at the interface of HfO2 and SiO2. Additionally, the investigation of interface state density reveals that the in-situ ALD of HfO2 process had negligible impact on the quality of SiO2/4H-SiC interface, suggesting that the observed small positive VFB shift origin from the HfO2/SiO2 interface rather than the SiO2/4H-SiC interface.

physics, applied
Interface Optimization and Transport Modulation of Sm2O3/InP Metal Oxide Semiconductor Capacitors with Atomic Layer Deposition-Derived Laminated Interlayer

Jinyu Lu,Gang He,Jin Yan,Zhenxiang Dai,Ganhong Zheng,Shanshan Jiang,Lesheng Qiao,Qian Gao,Zebo Fang

DOI: https://doi.org/10.3390/nano11123443

IF: 5.3

2021-12-19

Nanomaterials

Abstract:In this paper, the effect of atomic layer deposition-derived laminated interlayer on the interface chemistry and transport characteristics of sputtering-deposited Sm2O3/InP gate stacks have been investigated systematically. Based on X-ray photoelectron spectroscopy (XPS) measurements, it can be noted that ALD-derived Al2O3 interface passivation layer significantly prevents the appearance of substrate diffusion oxides and substantially optimizes gate dielectric performance. The leakage current experimental results confirm that the Sm2O3/Al2O3/InP stacked gate dielectric structure exhibits a lower leakage current density than the other samples, reaching a value of 2.87 × 10−6 A/cm2. In addition, conductivity analysis shows that high-quality metal oxide semiconductor capacitors based on Sm2O3/Al2O3/InP gate stacks have the lowest interfacial density of states (Dit) value of 1.05 × 1013 cm−2 eV−1. The conduction mechanisms of the InP-based MOS capacitors at low temperatures are not yet known, and to further explore the electron transport in InP-based MOS capacitors with different stacked gate dielectric structures, we placed samples for leakage current measurements at low varying temperatures (77–227 K). Based on the measurement results, Sm2O3/Al2O3/InP stacked gate dielectric is a promising candidate for InP-based metal oxide semiconductor field-effect-transistor devices (MOSFET) in the future.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology,chemistry
Interface Chemistry and Defect State Optimization of the ErSmO/InP Heterojunction Modified by ALD-Driven Al 2 O 3 Interlayers

Jinyu Lu,Gang He,Wenhao Wang,Shanshan Jiang,Qiuju Wu,Zebo Fang

DOI: https://doi.org/10.1021/acsaelm.2c01494

IF: 4.494

2023-02-09

ACS Applied Electronic Materials

Abstract:In this work, the effects of the atomic-layer deposition (ALD)-derived Al2O3 passivation layer with different growth cycles on the interfacial chemistry and electrical performance of sputtering-driven ErSmO/InP metal oxide semiconductor (MOS) capacitors have been comparatively investigated. Atomic force microscopy (AFM) and X-ray photoelectron spectroscopy (XPS) characterization have confirmed that the ALD-driven Al2O3 passivation layer with 20 growth cycles could form a flat dielectric layer and effectively suppress the diffusion of In and P elements at the InP interface. Meanwhile, the ErSmO/Al2O3/InP gate stack with 20 growth cycles exhibited optimal electrical properties, including a large dielectric constant of 37.42, a minimum interface state density (D it) of 5.43 × 1011 eV–1 cm–2, and a low leakage current of 3.95 × 10–6 A/cm–2. The leakage current conduction mechanisms of InP-MOS capacitors measured at room temperature and low temperature have also been systematically analyzed. Particularly, low-frequency noise (LFN) is used to evaluate trap levels in InP-MOS capacitors. All experimental results have demonstrated that the ErSmO/Al2O3/InP gate stack has potential applications in future ultrahigh-speed and high-frequency microelectronic devices.

materials science, multidisciplinary,engineering, electrical & electronic
Balanced Performance Improvement and Low-Frequency Noise of TMA-Passivated GaSb MOS Capacitors Using Bilayered HfO$_{\text{2}}$/Al$_{\text{2}}$O$_{\text{3}}$ Gate Dielectrics

Shanshan Jiang,Gang He,Jinyu Lu,Lesheng Qiao

DOI: https://doi.org/10.1109/ted.2023.3305948

IF: 3.1

2023-01-01

IEEE Transactions on Electron Devices

Abstract:The exploitation of high-performance GaSb metal–oxide–semiconductor (MOS) devices is severely limited by unstable interface and Fermi-level pinning effect. Herein, bilayered dielectric engineering is proposed to improve and balance the interface and electrical properties of GaSb MOS capacitors. The impacts of stacking sequence and sublayer thickness ratio of HfO2 and Al2O3 gate dielectrics on the interface chemistry and transport modification of trimethylaluminum (TMA)-passivated GaSb MOS capacitors are systematically explored. The GaSb MOS capacitors configured with HfO2/Al2O3 stacking sequence and 7-/3-nm thickness ratio passivate trap charges effectively and demonstrate the balanced performances with an oxide charge density of $- 3.95\times 10^{{10}}$ cm−2, an interface state density of $10.19\times 10^{{12}}$ cm−2, a leakage current density of $8.49\times 10^{-{6}}$ A/cm2, a dielectric constant value of 20, as well as unpinned Fermi level. Besides, the transformation of leakage current conduction mechanisms (CCMs) with electric field and temperature is comprehensively expounded. What is more, low-frequency noise (LFN) is discussed for the first time in GaSb MOS devices and provides convincing evidence that GaSb MOS capacitor with laminated 7-nm HfO2/3-nm Al2O3 has less traps, which makes it a promising gate dielectric for future GaSb high-mobility transistor devices.

engineering, electrical & electronic,physics, applied
Toward High-mobility and Low-power 2D MoS2 Field-effect Transistors

Zhihao Yu,Ying Zhu,Weisheng Li,Yi Shi,Gang Zhang,Yang Chai,Xinran Wang

DOI: https://doi.org/10.1109/iedm.2018.8614644

2018-01-01

Abstract:2D semiconductors are promising candidates for future electronic device applications due to their immunity to short-channel effects (SCE), but many issues regarding mobility, contact, interface and power consumption still remain (Fig. 1). We develop a low-field model to calculate the mobility of monolayer MoS 2 FETs. Guided by the model, high carrier mobility of 150 cm 2 /Vs and saturation current over $450 \mu \mathrm{A}/\mu \mathrm{m}$ are realized in long-channel monolayer MoS 2 FETs, through a series of interface optimization by high- $\boldsymbol{\kappa}$ dielectric and thiol chemical treatment. For low-power applications, we demonstrate hysteresis-free MoS 2 negative capacitance FETs (NCFETs) using ferroelectric HtZrO x (HZO) as gate dielectric, achieving sub-60m V/dec subthreshold slope (SS) over 6 orders of I D , minimum SS of 24 mV/dec and 10 7 on/off ratio under $V_{dd}=0.5\mathrm{V}$ . We further study the high frequency performance and show that sub-60mV/dec is maintained at least to 10 kHz without signs of degradation. Finally, by performing different gate sweeps we conclude that the steep slope is indeed due to NC effects rather than ferroelectric switching of HZO.
Charge Trapping At The Mos2-Sio2 Interface And Its Effects On The Characteristics Of Mos2 Metal-Oxide-Semiconductor Field Effect Transistors

yao guo,xianlong wei,jiapei shu,bo liu,jianbo yin,changrong guan,yuxiang han,song gao,qing chen

DOI: https://doi.org/10.1063/1.4914968

IF: 4

2015-01-01

Applied Physics Letters

Abstract:The field effect transistors (FETs) based on thin layer MoS2 often have large hysteresis and unstable threshold voltage in their transfer curves, mainly due to the charge trapping at the oxide-semiconductor interface. In this paper, the charge trapping and de-trapping processes at the SiO2MoS2 interface are studied. The trapping charge density and time constant at different temperatures are extracted. Making use of the trapped charges, the threshold voltage of the MoS2 based metal-oxide-semiconductor FETs is adjusted from 4V to -45 V. Furthermore, the impact of the trapped charges on the carrier transport is evaluated. The trapped charges are suggested to give rise to the unscreened Coulomb scattering and/or the variable range hopping in the carrier transport of the MoS2 sheet. (C) 2015 AIP Publishing LLC.

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