Abstract:As the device size continues to shrink, the gate oxygen layer in MOS devices continues to become thinner, which leads to problems such as increased leakage current in conventional Si MOS devices. SiC, an important semiconductor material used in high-power devices, is not immune to the problem of premature breakdown due to the gate oxygen layer. Based on this, this paper adopts the innovative approach of replacing the conventional SiO 2 as the gate oxygen layer with the high-k material, hafnium dioxide (HfO 2 ), and continues the in-depth study on the electrical characteristics of the gate oxygen structure. In this paper, hafnium dioxide (HfO 2 ) thin films were deposited on SiC and Si substrates using the atomic layer deposition(ALD) method. The metal-insulated semiconductor (MIS) structures with Al as the upper and lower electrodes were prepared, and the leakage currents and breakdown voltage characteristics of the MOS capacitors on the two different substrates were investigated. The leakage current density of the MOS capacitor structure with SiC substrate is 10 -11 A/cm 2 ,and the breakdown voltage is about 32 V. Based on the capacitance-voltage (C-V) measurements, the frequency dependence of the movable charge at the interface of the MOS capacitor structure is investigated. The lowest interfacial defect density (D it ) of the MOS capacitive structure with SiC substrate is only of the order of 10 10 eV -1 cm -2 , while the movable charge N eff of the oxide layer of this sample is also controlled to the order of 10 13 cm -2 . It is worth mentioning that the HfO 2 /SiC structure performs better than the HfO 2 /Si structure in these electrical parameters, and the sample designed in this paper also performs better in electrical parameters than previous studies. These results undoubtedly demonstrate that the combination of High-k material (HfO 2 ) and SiC in the MOS gate oxygen layer is a promising research topic.

Simultaneous electric dipoles and flat-band voltage modulation in 4H-SiC MOS capacitors through HfO2/SiO2 interface engineering

Analysis of the Electrical Properties and Current Transportation Mechanism of a Metal Oxide Semiconductor (MOS) Capacitor Based on HfGdO Gate Dielectrics

Pre-deposition Growth of Interfacial SiO2 Layer by Low-Oxygen-partial-pressure Oxidation in the Al2O3/4H-SiC MOS Structure

Interface Properties Study on SiC MOS with High-K Hafnium Silicate Gate Dielectric

C-V and J-V Investigation of HfO2/Al2O3 Bilayer Dielectrics MOSCAPs on (100) Β-Ga2o3

Investigation of a 4H—SiC metal—insulation—semiconductor structure with an Al2O3/SiO2 stacked dielectric

Impact and Origin of Interface States in MOS Capacitor with Monolayer MoS2 and HfO2 High-k Dielectric

Temperature-dependent Fowler-Nordheim electron barrier height in SiO2/4H-SiC MOS capacitors

Electrical Characterization of HfO2/4H-SiC and HfO2/Si MOS Structures

Functional Oxide as an Extreme High-k Dielectric towards 4H-SiC MOSFET Incorporation

Multi-Layer High-K Gate Stack Materials for Low Dit 4H-SiC Based MOSFETs

Interfacial and Electrical Characterization of HfO2/Al2O3/InAlAs Structures

Improved device characteristics obtained in 4H-SiC MOSFET using high-k dielectric stack with ultrathin SiO2-AlN as interfacial layers

Experimental investigation of dipole formation and modulation at Hf 0.5 Zr 0.5 O 2 /SiO 2 interface

Tuning the high-κ oxide (HfO2, ZrO2)/4H-SiC interface properties with a SiO2 interlayer for power device applications

Leakage Current Behavior in HfO2/SiO2/Al2O3 Stacked Dielectric on 4H-SiC Substrate

Increasing Mobility in 4H-SiC MOSFETs with Deposited Oxide by In-Situ Nitridation of SiC Surface

Improved Interface Properties and Reliability for Hf-In-Zn-O Semiconductor Capacitors with an Electric-Double-Layer Gate Dielectric by Inserting A Hfo2 Interlayer

Direct Observation of Dipole Influence Induced by a Spin Coated Organic Interfacial Layer on Effective Schottky Barrier Height Modulation of Hg/Si Contact

Balanced Performance Improvement and Low-Frequency Noise of TMA-Passivated GaSb MOS Capacitors Using Bilayered HfO$_{\text{2}}$/Al$_{\text{2}}$O$_{\text{3}}$ Gate Dielectrics

Oxygen vacancy engineering in Si-doped, HfO2 ferroelectric capacitors using Ti oxygen scavenging layers