Improved Interface Properties and Reliability for Hf-In-Zn-O Semiconductor Capacitors with an Electric-Double-Layer Gate Dielectric by Inserting A Hfo2 Interlayer

Xiao Zou,Guojia Fang,Pingli Qin,Hongjiu Wang,Zengcai Song,Haoning Wang,Hao Long,Qing Wan

DOI: https://doi.org/10.1016/j.tsf.2013.06.007

IF: 2.1

2013-01-01

Thin Solid Films

Abstract:The electrical characteristics and reliability of Hf-In-Zn-O (HIZO) metal-oxide-semiconductor capacitors (MOSCAPs) with a microporous SiO2-based electric-double-layer (EDL) dielectric were investigated. Experimental results indicated that the HfO2 interlayer could effectively improve the interface quality, thus leading to reduced interface states, suppressed hysteresis and decreased gate leakage current. Improved performance was achieved for the HIZO MOSCAPs with HfO2/EDL stack gate dielectrics (HECAPs), such as a large capacitance density of 0.7μF/cm2, an interface state density of 5.7×1011eV−1/cm2, a fixed charge density of 1.9×1012cm−2, a hysteresis voltage of 230mV and a gate leakage current density of 3×10−6 A/cm2 at +1V. Moreover, enhanced reliability of the HECAPs was obtained with an elevated dielectric breakdown voltage of 4.8V and a small increase (< 15 %) of gate leakage after gate bias stressing at 2V for 3600s.