High Energy Performance Ferroelectric (Ba,Sr)(Zr,Ti)O 3 Film Capacitors Integrated on Si at 400 °C
Kun Wang,Yuan Zhang,Sixu Wang,Yu-Yao Zhao,Hongbo Cheng,Qian Li,Xiangli Zhong,Jun Ouyang
DOI: https://doi.org/10.1021/acsami.1c01275
2021-05-06
Abstract:BaTiO<sub>3</sub>-based ferroelectrics have been extensively studied due to their large dielectric constants and a high saturated polarization, which have the potential to store or supply electricity of very high energy and power densities. In order to further improve the energy efficiency η and the recyclable energy density <i>W</i><sub>rec</sub>, an A, B-site co-doped (Ba<sub>0.95</sub>,Sr<sub>0.05</sub>)(Zr<sub>0.2</sub>,Ti<sub>0.8</sub>)O<sub>3</sub> ceramic target was used for sputter deposition of film capacitor structures on Si. This film composition reduces the remnant polarization <i>P</i><sub>r</sub>, while the choice of a low-temperature, templated sputtering process facilitates the formation of high-density arrays of columnar nanograins (average diameter <i>d</i> ∼20 nm) and grain boundary dead layers. This self-assembled nanostructure further delays the saturation of the electric polarization, leading to a high energy density <i>W</i><sub>rec</sub> of ∼148 J/cm<sup>3</sup> and a high energy efficiency <i>η</i> of ∼90%. Moreover, the (Ba<sub>0.95</sub>,Sr<sub>0.05</sub>)(Zr<sub>0.2</sub>,Ti<sub>0.8</sub>)O<sub>3</sub> film capacitors retain their high energy storage performance in a broad range of working temperature (−175–300 °C) and operating frequency (1 Hz–20 kHz). They are also fatigue-free after up to 2 × 10<sup>9</sup> switching cycles. Our work provides a new method and a cost-effective processing route for the creation and integration of high-performance dielectric capacitors for energy storage applications.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acsami.1c01275?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acsami.1c01275</a>.Weibull distribution model; experimental setup of the reflection SHG measurements; bipolar <i>P</i>–<i>E</i> loops of the BSZT films deposited at different temperatures under 5 MV/cm and various electric fields up to <i>E</i><sub>b</sub>; ε<sub>r</sub>–<i>f</i>/tgδ−<i>f</i> of the BSZT films deposited at different temperatures (350, 400, 450, and 500 °C); grain/crystallite size as a function of the deposition temperature; solution of <i>P</i><sub>s</sub>; unipolar <i>P</i>–<i>E</i> loops for the 400 °C-deposited BSZT film capacitors; energy performance comparison with data calculated from the bipolar and unipolar <i>P</i>–<i>E</i> loops; measured polarizations of <i>P</i><sub>max</sub>, <i>P</i><sub>r</sub>, <i>P</i><sub>max</sub>–<i>P</i><sub>r</sub>, and percentage changes of <i>W</i><sub>rec</sub> and η as functions of temperature, frequency, and cycling times; and related structural and electrical property data of the BSZT films deposited at different temperatures (<a class="ext-link" href="/doi/suppl/10.1021/acsami.1c01275/suppl_file/am1c01275_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.
materials science, multidisciplinary,nanoscience & nanotechnology