Probing the Layer-Dependent Behavior of Electronic Properties and Quantum Capacitance in 2H MoS 2 : A Computational Analysis with Emphasis on Mechanical Stability

M Keerthana,Fidha Azees NM,Simran Kour,A. L. Sharma
DOI: https://doi.org/10.2139/ssrn.4888983
IF: 4.778
2024-08-29
Materials Chemistry and Physics
Abstract:The quest for clean, sustainable energy sources was prompted by the fast depletion of fossil fuels and the world's expanding energy requirements. To store renewable energy, it is important that effective energy storage devices such as supercapacitor be manufactured. offer a promising avenue for fast-charging, energy storage, and long-life cycles but maximizing their energy density remains a problem. This study theoretically explores the intrinsic Quantum capacitance ( of MoS 2 in the 2H phase with a few number of layers and how factors like electronic structure and density of states influence its capacitance behavior. In the present work, the first principles analysis utilizing computational modelling with Density Functional Theory (DFT) has been employed to investigate the and surface charge density (σ) of MoS 2 . By explaining the connection between MoS 2 's electrical and structural properties with its , valuable insights for optimizing it's performance were obtained. Both the density of states (DOS) and the increase with the number of layers. Among the observed structures the highest value of is observed for the three layered structure of 2H-MoS 2 (2H3L-MoS 2 ) at +1 V which is 1615.14 μF cm -2 . Investigating the mechanical stability of optimized structure (2H3L-MoS 2 ), a high Young's modulus of 180.46 GPa is observed for 2H3L structure. Hence, 2H-phase of MoS 2 can be used as an excellent anode material for asymmetric and flexible electronic devices.
materials science, multidisciplinary
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