Abstract:Semiconducting monolayers of a 2D material are able to concatenate multiple interesting properties into a single component. Here, by combining opto-mechanical and electronic measurements, we demonstrate the presence of a partial 2H–1T′ phase transition in a suspended 2D monolayer membrane of MoS2. Electronic transport shows unexpected memristive properties in the MoS2 membrane, in the absence of any external dopants. A strong mechanical softening of the membrane is measured concurrently and may only be related to the 2H–1T′ phase transition, which imposes a 3% directional elongation of the topological 1T′ phase with respect to the semiconducting 2H. We note that only a few percent 2H–1T′ phase switching is sufficient to observe measurable memristive effects. Our experimental results combined with first-principles total energy calculations indicate that sulfur vacancy diffusion plays a key role in the initial nucleation of the phase transition. Our study clearly shows that nanomechanics represents an ultrasensitive technique to probe the crystal phase transition in 2D materials or thin membranes. Finally, a better control of the microscopic mechanisms responsible for the observed memristive effect in MoS2 is important for the implementation of future devices.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acsnano.0c05721?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acsnano.0c05721</a>.Additional measurements on the memristive effect and PPC with some models, a description of the movement equation of the resonator, and a more complete discussion on the origin of the observed mechanical softening (<a class="ext-link" href="/doi/suppl/10.1021/acsnano.0c05721/suppl_file/nn0c05721_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.

Mechanically Modulated Tunneling Resistance in Monolayer MoS2

Total Ionizing Dose Effects and Proton-Induced Displacement Damage on MoS 2 -Interlayer-mos 2 Tunneling Junctions

Force and light tuning vertical tunneling current in the atomic layered MoS2.

Resistive Switching Mechanism of MoS2 Based Atomristor

Switching Mechanism in Single-Layer Molybdenum Disulfide Transistors: an Insight into Current Flow across Schottky Barriers

Monolayer MoS2 As a Sensitive Probe: Exploring the Resistive Switching Mechanism of MoS2/NSTO Heterostructures

Tunable friction of monolayer MoS2 by control of interfacial chemistry

Force Modulation of Tunnel Gaps in Metal Oxide Memristive Nanoswitches

Gate-controlled Reversible Rectifying Behaviour in Tunnel Contacted Atomically-Thin MoS2 Transistor

Low Contact Resistance on Monolayer MoS2 Field-Effect Transistors Achieved by CMOS-Compatible Metal Contacts

Gate-controlled reversible rectifying behaviour in tunnel contacted atomically-thin MoS$_{2}$ transistor

Improved Contact Resistance by a Single Atomic Layer Tunneling Effect in WS2 /MoTe2 Heterostructures

Thickness-Dependent Enhancement of Electronic Mobility of MoS2 Transistors Via Surface Functionalization

Phase Transition in a Memristive Suspended MoS2 Monolayer Probed by Opto- and Electro-Mechanics

Pinch-Off Formation in Monolayer and Multilayers MoS2 Field-Effect Transistors

Electromechanics in MoS2 and WS2: nanotubes vs. monolayers

Coulomb blockade in monolayer MoS2 single electron transistor.

Bandgap and doping effects in MoS2 measured by Scanning Tunneling Microscopy and Spectroscopy

Mechanisms of Defect-Mediated Memristive Behavior in MoS 2 Monolayer

Phase Transition in a Memristive Suspended MoS 2 Monolayer Probed by Opto- and Electro-Mechanics