Abstract:Properties of one-dimensional (1D) arrays of low Ohmic tunnel junctions (i.e. junctions with resistances comparable to, or less than, the quantum resistance $R_{\rm q}\equiv h/e^2\approx 25.8$ k$\Omega$) have been studied experimentally and theoretically. Our experimental data demonstrate that -- in agreement with previous results on single- and double-junction systems -- Coulomb blockade effects survive even in the strong tunneling regime and are still clearly visible for junction resistances as low as 1 k$\Omega$. We have developed a quasiclassical theory of electron transport in junction arrays in the strong tunneling regime. Good agreement between the predictions of this theory and the experimental data has been observed. We also show that, due to both heating effects and a relatively large correction to the linear relation between the half-width of the conductance dip around zero bias voltage, $V_{1/2}$, and the measured electronic temperature, such arrays are inferior to those conventionally used in the Coulomb Blockade Thermometry (CBT). Still, the desired correction to the half-width, $\Delta V_{1/2}$, can be determined rather easily and it is proportional to the magnitude of the conductance dip around zero bias voltage, $\Delta G$. The constant of proportionality is a function of the ratio of the junction and quantum resistances, $R/R_{\rm q}$, and it is a pure strong tunneling effect.

What problem does this paper attempt to address?

The problems that this paper attempts to solve are: **In the strong tunneling regime, does the Coulomb blockade effect still exist in one - dimensional tunnel junction arrays, and how to quantitatively describe this effect?** Specifically, the authors are concerned with whether the Coulomb blockade effect will disappear or can still be observed when the resistance of the tunnel junction $R_j$ is lower than the quantum resistance $R_q=\frac{h}{e^2}\approx25.8 \, \text{k}\Omega$. In addition, they also explore the electron transport properties of these low - resistance tunnel junction arrays at high temperatures and compare them with traditional high - resistance tunnel junction arrays. ### Main research questions: 1. **Existence of the Coulomb blockade effect**: Even in the strong tunneling regime (i.e., $R_j\ll R_q$), does the Coulomb blockade effect still exist? 2. **Establishment of a theoretical model**: Develop a quasi - classical Langevin equation theory to describe the electron transport properties in the strong tunneling regime. 3. **Experimental verification**: Verify the predictions of the theoretical model through experiments, especially the current - voltage characteristics and the change of conductance peak width under different temperature and bias voltage conditions. 4. **Application prospects**: Evaluate the applicability of these low - resistance tunnel junction arrays in Coulomb blockade thermometry (CBT), especially the advantages and disadvantages compared with traditional high - resistance arrays. ### Research background: Previous studies have mainly focused on high - resistance tunnel junctions ($R_j > R_q$), while there are fewer studies on low - resistance tunnel junctions ($R_j\leq R_q$). This paper fills this gap in the field through a combination of theoretical and experimental methods. ### Research significance: This research not only deepens the understanding of the Coulomb blockade effect in the strong tunneling regime but also provides theoretical basis and experimental support for the development of new low - temperature thermometry techniques.

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