Abstract:The use of individual molecules as functional electronic devices was first proposed in the 1970s (ref. 1). Since then, molecular electronics2,3 has attracted much interest, particularly because it could lead to conceptually new miniaturization strategies in the electronics and computer industry. The realization of single-molecule devices has remained challenging, largely owing to difficulties in achieving electrical contact to individual molecules. Recent advances in nanotechnology, however, have resulted in electrical measurements on single molecules4,5,6,7. Here we report the fabrication of a field-effect transistor—a three-terminal switching device—that consists of one semiconducting8,9,10 single-wall carbon nanotube11,12 connected to two metal electrodes. By applying a voltage to a gate electrode, the nanotube can be switched from a conducting to an insulating state. We have previously reported5 similar behaviour for a metallic single-wall carbon nanotube operated at extremely low temperatures. The present device, in contrast, operates at room temperature, thereby meeting an important requirement for potential practical applications. Electrical measurements on the nanotube transistor indicate that its operation characteristics can be qualitatively described by the semiclassical band-bending models currently used for traditional semiconductor devices. The fabrication of the three-terminal switching device at the level of a single molecule represents an important step towards molecular electronics.

A Silicon Cluster Based Single Electron Transistor with Potential Room-Temperature Switching

Fabrication and Characterization of a Single Electron Transistor Based on a Silicon-on-Insulator

Single-ZnO-Nanobelt-Based Single-Electron Transistors

Silicon Single Electron Transistors Aiming at a High Gate Modulation Factor

Integration of on-chip field-effect transistor switches with dopantless Si/SiGe quantum dots for high-throughput testing

Gate-sensing coherent charge oscillations in a silicon field-effect transistor

Room Temperature Molecular Single-Electron Transistor

Coulomb Blockade Oscillations in Silicon Single-electron Transistor with a Strong Gate-dot Coupling

Quantum Interference Mediated Vertical Molecular Tunneling Transistors

Quantum Transport Simulations of Sub-60-mV/Decade Switching of Silicon Cold Source Transistors

Single-electron quantization at room temperature in a-few-donor quantum dot in silicon nano-transistors

Room-temperature transistor based on a single carbon nanotube

A Silicon Single-Electron Pump With Tunable Electrostatic Confinement

A Silicon Nanocrystal Tunnel Field Effect Transistor

Independently switchable atomic quantum transistors by reversible contact reconstruction

Single-electron operation of a silicon-CMOS 2x2 quantum dot array with integrated charge sensing

A single-electron transistor made from a cadmium selenide nanocrystal

Single-electron pumping in a ZnO single-nanobelt quantum dot transistor

CMOS-compatible fabrication of room-temperature single-electron devices

Effects of Quantized Energy Levels of QDs Confined in Asymmetric Barriers Within Silicon Nanowire Transistor

Ambipolar quantum dots in undoped silicon fin field-effect transistors