Abstract:Atomically precise donor-based quantum devices are a promising candidate for scalable solid-state quantum computing. Atomically precise design and implementation of the tunnel coupling in these devices is essential to realize gate-tunable exchange coupling, and electron spin initialization and readout. Current efforts in atomically precise lithography have enabled deterministic placement of single dopant atoms into the Si lattice with sub-nm precision. However, critical challenges in atomically precise fabrication have meant systematic, atomic-scale control of the tunneling coupling has not been demonstrated. Here using a room-temperature grown locking layer and precise control over the entire atomic-scale fabrication process, we demonstrate atomic-scale control of the tunnel coupling in atomically precise single-electron transistors (SETs). Using the naturally occurring Si (100) 2x1 surface reconstruction lattice as an atomically-precise ruler, we systematically vary the number of lattice counts within the tunnel junction gaps and demonstrate exponential scaling of the tunneling resistance at the atomic limit. Using low-temperature transport measurements, we characterize the tunnel coupling asymmetry in a pair of nominally identical tunnel gaps that results from atomic-scale variation in the tunnel junction and show a resistance difference of four that corresponds to half a dimer row pitch difference in the effective tunnel gap distances - the intrinsic limit of hydrogen lithography precision on Si (100) 2x1 surfaces. Our results demonstrate the key capability to do atom-scale design and engineering of the tunnel coupling necessary for solid-state quantum computing and analog quantum simulation.

CMOS-compatible fabrication of room-temperature single-electron devices

A Silicon Cluster Based Single Electron Transistor with Potential Room-Temperature Switching

CMOS Platform for Atomic-Scale Device Fabrication

Using Nanoscale Thermocapillary Flows to Create Arrays of Purely Semiconducting Single-Walled Carbon Nanotubes

Multiplexed quantum transport using commercial off-the-shelf CMOS at sub-kelvin temperatures

Fabrication and Characterization of a Single Electron Transistor Based on a Silicon-on-Insulator

Room-temperature transistor based on a single carbon nanotube

Single Molecule Electronics and Devices

Nano Electrical Devices and Integration

Room-Temperature Si Single-Electron Memory Fabricated By Nanoimprint Lithography

Wafer-scale fabrication of carbon-nanotube-based CMOS transistors and circuits with high thermal stability

Direct atomic fabrication and dopant positioning in Si using electron beams with active real time image-based feedback

Single donor ionization energies in a nanoscale CMOS channel

Dual-gated Single-Molecule Field-Effect Transistors Beyond Moore’s Law

Coulomb Staircases and Differential Conductance Oscillations in A Simox-Based Single-Electron Transistor

Complementary carbon nanotube metal–oxide–semiconductor field-effect transistors with localized solid-state extension doping

A Method for Fabricating CMOS Back-End-of-Line-Compatible Solid-State Nanopore Devices

Nanoscale Electronics Based on Two-Dimensional Dopant Patterns in Silicon

Single-Electron Devices with A Mechanical Degree of Freedom

Atomic-scale Control of Tunnel Coupling

Low-Temperature, Directly Depositing Individual Single-Walled Carbon Nanotubes for Fabrication of Suspended Nanotube Devices