Nano Electrical Devices and Integration

Liu Ming,Chen Baoqin,Xie Changqing,Wang Congshun,Long Shibing,Xu Qiuxia,Li Zhigang,Yili Chengrong,Tu Deyu,Shang Liwei
DOI: https://doi.org/10.3969/j.issn.1674-4926.2006.z1.002
2006-01-01
Abstract:The progress and challenge on quantum mechanism nano-devices such as single-electron transistors (SET),resonant tuneling diodes(RTD), and molecular devices are investigated and discussed.The SET with CMOS compatible technology is successfully fabricated,and the Coulomb blockade effect is clearly observed.AlAs/GaAs/In0.1Ga0.9As/GaAs/AlAs double-barrier resonant tunneling diodes (DBRTDs) grown on semi-insulated GaAs substrate with molecular beam epitaxy are demonstrated.With ringed collector and thin barriers,the devices exhibit a maximum PVCR of 13.98 and a peak current density of 89kA/cm2 at room temperature.Finally,the progress of molecular memory with cross-bar structure is summarized.
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