Fabrication Techniques of Nano-Structure

卢刚,陈治明,王建农,葛惟昆
DOI: https://doi.org/10.3321/j.issn:0372-2112.2003.02.039
2003-01-01
Abstract:With the development of nano fabrication techniques,nano structure devices will be the basis of the next generation integrated circuits.We report process of Si quantum wire and dot based on EBL and RIE processes and process of nano structure metal gate based on EBL,electron beam evaporation and lift off techniques.Single electron transistors (SETs) on p type SIMOX substrates were also fabricated based on the processes.Coulomb blockade and single electron tunneling are observed in the SETs.
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