Fabrication of silicon quantum wires by conventional silicon processing

Sh Yi,Liu Jianlin,Wang Feng,Zh Rong,Han Ping,Gu Shulin,Zh Shunming,M. Baohua,Zh Youdou
1995-01-01
Abstract:Ultra fine silicon quantum wires with the Si/SiO 2 heterointerface have been fabricated successfully by using reactive ion etching, anisotropic wet chemical etching and subsequent thermal oxidation. The cross-sectional image of scanning electron microscope shows the silicon quantum wires of high quality with the linewidth down to 20nm. The present method has many remarkable advantages, which is important to the study of low-dimension quantum physics and devices.
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