Abstract:Silicon-based semiconductor quantum dot quantum computing coding with spin is compatible with traditional microelectronic processes, easy to expand, and can be isotope purified to improve the decoherence time, so it has attracted much attention. There are fewer reports on the work related to undoped Si/SiGe heterostructures grown by molecular beam epitaxy compared with chemical vapor deposition. An undoped Si/SiGe heterostructure has been grown by molecular beam epitaxy. The scanning transmission electron microscopy and energy-dispersive spectroscopy mapping results show an atomic-scale interface with a characteristic length of 0.53 nm. The surface root-mean-square roughness measured by atomic force microscope is 0.44 nm. The X-ray diffraction data show that the Si quantum well is fully strained and the in-plane strain is 1.03%. In addition, the performance of the two-dimensional electron gas was evaluated by low-temperature Hall measurements, which were conducted in the Hall-bar shaped field-effect transistor. It shows a peak mobility of 20.21×10 4 cm 2 ·V -1 ·s -1 when the carrier density is about 6.265×1011 cm-2 at 250 mK. The percolation density is 1.465×10 11 cm -2 . The effective mass of the two-dimensional electron gas is approximately 0.19 m 0 . The power exponential relationship (1.026) between carrier density and mobility at different gate voltages, along with the Dingle ratio (7-12) of the two-dimensional electron gas, indicates that the electrons are scattered by background impurities and semiconductor/oxide interfaces charges. The atomically sharp interface of Si/SiGe heterostructures created by molecular beam epitaxy is beneficial for researching the valley physics properties in silicon. The structural and transport characterizations in this paper lay the foundation for the optimization of Si-based semiconductor quantum dot quantum computing materials.

Realization of Silicon Quantum Wires Based on Si/SiGe/Si Heterostructure

Realization of Silicon Quantum Wires by Selective Chemical Etching and Thermal Oxidation

Fabrication of silicon quantum wires by conventional silicon processing

Fabrication of Silicon Quantum Wires by Anisotropic Wet Chemical Etching and Thermal-Oxidation

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Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers

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Self-controlled growth of highly uniform Ge/Si hut wires for scalable qubit devices

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Silicon Nano-Wires Fabricated by Thermal Evaporation of Silicon Wafer

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Tiny SiO2 nano-wires synthesized on Si (1 1 1 ) wafer

Tiny SiO2 nano-wires synthesized on Si (111) wafer

Au5si2/Si Heterojunction Nanowires Formed by Combining Sio Evaporation with Vapour-Liquid-Solid Mechanism

Ultrashallow Heavily Constrained Quantum Wells: the Cradle for Fully Electrically Controlled and Microwave Coupled Quantum Bits

Fabrication of quantum dots in undoped Si/Si$_{0.8}$Ge$_{0.2}$ heterostructures using a single metal-gate layer

Epitaxy and characterization of undoped Si/SiGe heterojunctions

Growth of self-integrated atomic quantum wires and junctions of a Mott semiconductor

Epitaxial growth of planar hutwires on silicon‐on‐insulator substrates

Research on silicon crystal wires growth by vapor-liquid-solid reaction