Abstract:Using in situ scanning tunneling microscopy and low-energy electron diffraction, we performed investigations on the growth of zirconium silicide on vicinal and flat Si(111)-7 x 7 surfaces. In the case of a solid-phase reaction, submonolayer zirconium deposition onto vicinal Si followed by successive annealing results in the formation of zirconium silicide nanostructures, which are distributed randomly on the surface. These nanostructures evolved into rod-shaped islands with axes running along the substrate <(1) over bar 10 > directions at the late stage of the coarsening process. When 2-3 monolayers of Zr are deposited on Si at 520 degrees C, an extended network with rod-like silicide domains was developed, which is controlled by the elastic strain-relief mechanism. The atomic structures of these silicide features were identified and they are considered to adopt C49 ZrSi2. The reaction and growth on a flat surface with less Zr coverage at higher temperatures led to the formation of longer and narrower nanowires. The relations between the variety of nanostructures and the different growth conditions are addressed.

Research on silicon crystal wires growth by vapor-liquid-solid reaction

Ultrafast growth of single-crystalline Si nanowires

Investigation of the Growth Process of Si Nanowires Using the Vapour-Liquid-solid Mechanism

Silicon Nano-Wires Fabricated by Thermal Evaporation of Silicon Wafer

Silicon nano-wires grown at low temperature

Silicon Nano-Wires Fabricated by a Novel Thermal Evaporation of Zinc Sulfide

Growth of Poly-Crystalline Si Films on Flexible Substrate by Hot Wire Chemical Vapor Deposition

Atomistics of vapor-liquid-solid nanowire growth

A Novel Sulfide-Assisted Growth of Silicon Nano-Wires

Sulfide-assisted Growth of Silicon Nano-Wires by Thermal Evaporation of Sulfur Powders

Growth Of Amorphous Silicon Nanowires Via A Solid-Liquid-Solid Mechanism

Tiny silicon nano-wires synthesis on silicon wafers

Crystallization and Disappearance of Defects of the Annealed Silicon Nanowires

Ultralong Single Crystal Silicon Nanowires Synthesized by Chemical Vapor Deposition

The Growth Mechanism of Silicon Nanowires and Their Quantum Confinement Effect

Growth of Zirconium Silicide Nanostructures on Vicinal and Flat Si(111)-7 × 7 Surfaces

Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers

Silicon Nanowire Synthesis by Chemical Vapor Deposition

Direct observation of the growth process of silicon carbide nanowhiskers by vapor–solid process

Atomistics of Vapour–liquid–solid Nanowire Growth

Fabrication of silicon quantum wires by conventional silicon processing