Abstract:Si quantum dots in SiO(2)/Si(3)N(4) hybrid matrix on quartz substrates were fabricated by magnetron sputtering of alternating silicon rich oxide and Si(3)N(4) layers followed by different post-deposition anneals. X-ray diffraction results indicate that the average dimension of the Si QDs ranges from 1.6 to 5.2 nm. The size and crystallisation of the Si nanocrystals are dependent on a number of factors, including the annealing condition, the SRO thickness and the Si(3)N(4) barrier thickness, as evidenced in XRD and Raman measurements. In particular, thicker Si(3)N(4) barrier layers seem to be able to suppress the growth of Si nanocrystals more effectively. PL measurements indicate that the apparent bandgap of the samples investigated in this work is in the range 1.12-1.67 eV, which demonstrates the effect of quantum confinement. More interestingly, analysis of the PL data reveals that the PL peak energy does not only depend on the size of the nanocrystals, but also affected by other details of the nanocrystal formation. A simple core-shell model is constructed to illustrate our explanation. These findings offer a preliminary understanding of the nanocrystal growth and radiative recombination processes in this newly synthesized material.

The Growth Mechanism of Silicon Nanowires and Their Quantum Confinement Effect

Ultrafast growth of single-crystalline Si nanowires

A Novel Sulfide-Assisted Growth of Silicon Nano-Wires

Silicon Nano-Wires Fabricated by Thermal Evaporation of Silicon Wafer

Investigation of the Growth Process of Si Nanowires Using the Vapour-Liquid-solid Mechanism

Synthesis and Raman Spectra of Si-Nanowires

Silicon Nano-Wires Fabricated by a Novel Thermal Evaporation of Zinc Sulfide

Sulfide-assisted Growth of Silicon Nano-Wires by Thermal Evaporation of Sulfur Powders

Tiny silicon nano-wires synthesis on silicon wafers

Direct Evidence of Quantum Confinement from the Size Dependence of the Photoluminescence of Silicon Quantum Wires

Silicon nano-wires grown at low temperature

Nanoscale Silicon Wires Synthesized Using Simple Physical Evaporation

Silicon Nanowire Synthesis by Chemical Vapor Deposition

Growth morphology and micro-structural aspects of Si nanowires synthesized by laser ablation

A Simple Route to Growth of Silicon Nanowires

Fabrication and Characterisation of Silicon Quantum Dots in SiO 2 /si 3 N 4 Hybrid Matrix

Transmission Electron Microscopy Study of Si Nanowires

Growth Of Amorphous Silicon Nanowires Via A Solid-Liquid-Solid Mechanism

Atomistics of vapor-liquid-solid nanowire growth

Synthesis and photoluminescence properties of semiconductor nanowires

Solution-Liquid-Solid Growth of Semiconductor Nanowires