Abstract:The ability to produce nanowires through vapor- and solution-based processes has propelled nanowire material systems toward a wide range of technological applications. Conventional, vapor-based nanowire syntheses have enabled precise control over nanowire composition and phase. However, vapor-based nanowire growth employs batch processes with specialized pressure management systems designed to operate at high temperatures, limiting throughput. More recently developed solution-based nanowire growth processes have improved scalability but can require even more extensive pressure and temperature management systems. Here, we demonstrate a continuous-flow, solution-based nanowire growth process that utilizes the large Young-Laplace interfacial surface pressures and collective heating effects of colloidal metal nanocrystals under irradiation to drive semiconductor nanowire growth photothermally without the need for high-pressure or high-temperature equipment. In this process, a laser irradiates a solution containing metal nanocrystals and semiconductor precursors. Upon light absorption, the metal nanocrystals heat rapidly, inducing semiconductor precursor decomposition and nanowire growth. This process is performed on a benchtop in simple glassware under standard conditions. To demonstrate the generality of this technique, we synthesized three distinct semiconductor nanowire material systems: bismuth-seeded germanium nanowires, bismuth-seeded cadmium selenide nanowires, and indium-seeded germanium nanowires. The simplicity and versatility of this process opens the door to a range of experiments and technologies including in-line combinatorial identification of optimized reaction parameters, in situ spectroscopic measurements to study solution-based nanowire growth, and the potential production of nanowires with complex compositions or rationally incorporated dopants.

Solution-Liquid-Solid Growth of Semiconductor Nanowires

Ultrafast growth of single-crystalline Si nanowires

Solution-Liquid-Solid Synthesis, Properties, and Applications of One-Dimensional Colloidal Semiconductor Nanorods and Nanowires.

Atomistics of vapor-liquid-solid nanowire growth

Controlled Growth of Amorphous Silicon Nanowires Via a Solid-Liquid-Solid (SLS) Mechanism

A Novel Sulfide-Assisted Growth of Silicon Nano-Wires

Growth Of Amorphous Silicon Nanowires Via A Solid-Liquid-Solid Mechanism

A Laser Ablation Method for the Synthesis of Crystalline Semiconductor Nanowires

Laser-Driven Growth of Semiconductor Nanowires from Colloidal Nanocrystals via the Young-Laplace Effect

Investigation of the Growth Process of Si Nanowires Using the Vapour-Liquid-solid Mechanism

Solution-solid-solid Mechanism: Superionic Conductors Catalyze Nanowire Growth.

Plausible Colloidal Methods to Synthesize Semiconductor Nanowires: Deep Study From ZnSe Nanorods

Morphology Control in the Vapor−Liquid−Solid Growth of SiC Nanowires

Solution-Based Growth And Structural Characterization Of Homo- And Heterobranched Semiconductor Nanowires

Oriented Si nanowires grown via an SLS mechanism

Morphology control and growth dynamics of in-plane solid–liquid–solid silicon nanowires

The Growth Mechanism of Silicon Nanowires and Their Quantum Confinement Effect

Guided Growth of In-Plane Silicon Nanowires

Solid–Liquid–Vapor Synthesis of Negative Metal Oxide Nanowire Arrays

Controlled synthesis of millimeter-long silicon nanowires with uniform electronic properties.

Solution–solid–solid Growth of Metastable Wurtzite Γ-Mns Nanowires with Controlled Length