Abstract:We report the nanocluster-catalyzed growth of ultralong and highly uniform single-crystalline silicon nanowires (SiNWs) with millimeter-scale lengths and aspect ratios up to approximately 100,000. The average SiNW growth rate using disilane (Si 2H 6) at 400 degrees C was 31 microm/min, while the growth rate determined for silane (SiH 4) reactant under similar growth conditions was 130 times lower. Transmission electron microscopy studies of millimeter-long SiNWs with diameters of 20-80 nm show that the nanowires grow preferentially along the 110 direction independent of diameter. In addition, ultralong SiNWs were used as building blocks to fabricate one-dimensional arrays of field-effect transistors (FETs) consisting of approximately 100 independent devices per nanowire. Significantly, electrical transport measurements demonstrated that the millimeter-long SiNWs had uniform electrical properties along the entire length of wires, and each device can behave as a reliable FET with an on-state current, threshold voltage, and transconductance values (average +/-1 standard deviation) of 1.8 +/- 0.3 microA, 6.0 +/- 1.1 V, 210 +/- 60 nS, respectively. Electronically uniform millimeter-long SiNWs were also functionalized with monoclonal antibody receptors and used to demonstrate multiplexed detection of cancer marker proteins with a single nanowire. The synthesis of structurally and electronically uniform ultralong SiNWs may open up new opportunities for integrated nanoelectronics and could serve as unique building blocks linking integrated structures from the nanometer through millimeter length scales.

Controlled Growth of Amorphous Silicon Nanowires Via a Solid-Liquid-Solid (SLS) Mechanism

Growth Of Amorphous Silicon Nanowires Via A Solid-Liquid-Solid Mechanism

Ultrafast growth of single-crystalline Si nanowires

Oriented Si nanowires grown via an SLS mechanism

A Novel Sulfide-Assisted Growth of Silicon Nano-Wires

Nickel Induced Crystallization of Amorphous Silicon Thin Films

Solution-Liquid-Solid Growth of Semiconductor Nanowires

Growth of Silicon Nanowires by Heating Si Substrate

Investigation of the Growth Process of Si Nanowires Using the Vapour-Liquid-solid Mechanism

Morphology control and growth dynamics of in-plane solid–liquid–solid silicon nanowires

Silicon Nanowires Grown from Au-coated Si Substrate

Atomistics of vapor-liquid-solid nanowire growth

Sulfide-assisted Growth of Silicon Nano-Wires by Thermal Evaporation of Sulfur Powders

An In-Plane Solid-Liquid-Solid Growth Mode For Self-Avoiding Lateral Silicon Nanowires

Silicon Nano-Wires Fabricated by Thermal Evaporation of Silicon Wafer

H2-assisted control growth of Si nanowires

Rational growth of highly oriented amorphous silicon nanowire films

Guided Growth of In-Plane Silicon Nanowires

Controlled synthesis of millimeter-long silicon nanowires with uniform electronic properties.

Growth Mechanism And Dynamics Of In-Plane Solid-Liquid-Solid Silicon Nanowires

Controlled-Direction Growth of Planar InAsSb Nanowires on Si Substrates Without Foreign Catalysts