Morphology Control in the Vapor−Liquid−Solid Growth of SiC Nanowires

Huatao Wang,Zhipeng Xie,Weiyou Yang,Jiyu Fang,Linan An
DOI: https://doi.org/10.1021/cg8002756
IF: 4.01
2008-01-01
Crystal Growth & Design
Abstract:In this paper, we report a new technique to manipulate and control the morphology of vapor-liquid-solid (VLS) grown SiC nanowires by varying the pressure of the source species. We demonstrate that the diameter of the nanowires is strongly related to the pressure and pressure variation rate of the source species. SiC nanowires with Eiffel-tower shape, spindle shape, and modulated diameters and periods have been synthesized. In principle, the technique is applicable to other material systems.
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