Precise Control on the Growth of Sic Nanowires

Wei Feng,Jingtao Ma,Weiyou Yang

DOI: https://doi.org/10.1039/c2ce06569j

IF: 3.756

2012-01-01

CrystEngComm

Abstract:We report the precisely controlled growth of SiC nanowires based upon the VLS process by tailoring the cooling rates, which could open a novel and general strategy for well-controlled growth of 1D semiconductor nanostructures.

What problem does this paper attempt to address?

Ultrafast growth of single-crystalline Si nanowires

J.B. Chang,J.Z. Liu,P.X. Yan,L.F. Bai,Z.J. Yan,X.M. Yuan,Q. Yang

DOI: https://doi.org/10.1016/j.matlet.2005.12.085

IF: 3

2006-01-01

Materials Letters

Abstract:Silicon nanowires (SiNWs) have been catalytically synthesized by heat treatment of Si nanopowder at 980 °C. The SiNWs comprise crystalline Si nanoparticles interconnected with metal catalyst. The formation mechanism of nanowires generally depends on the presence of Fe catalysts in the synthesis process of solid–liquid–solid (SLS). Although gas phase of vapor–liquid–solid (VLS) method can be used to produce various of different nanowire materials, growth model based on the SLS mechanism by heat treatment is more ascendant for providing ultrafast growth of single-crystalline Si nanowires and controlling the diameter of them easily. The growth of single-crystalline SiNWs and morphology were discussed.
Morphology Control in the Vapor−Liquid−Solid Growth of SiC Nanowires

Huatao Wang,Zhipeng Xie,Weiyou Yang,Jiyu Fang,Linan An

DOI: https://doi.org/10.1021/cg8002756

IF: 4.01

2008-01-01

Crystal Growth & Design

Abstract:In this paper, we report a new technique to manipulate and control the morphology of vapor-liquid-solid (VLS) grown SiC nanowires by varying the pressure of the source species. We demonstrate that the diameter of the nanowires is strongly related to the pressure and pressure variation rate of the source species. SiC nanowires with Eiffel-tower shape, spindle shape, and modulated diameters and periods have been synthesized. In principle, the technique is applicable to other material systems.
Controlled-Direction Growth of Planar InAsSb Nanowires on Si Substrates Without Foreign Catalysts

Wenna Du,Xiaoguang Yang,Huayong Pan,Xianghai Ji,Haiming Ji,Shuai Luo,Xingwang Zhang,Zhanguo Wang,Tao Yang

DOI: https://doi.org/10.1021/acs.nanolett.5b03587

IF: 10.8

2016-01-01

Nano Letters

Abstract:We describe the controlled growth of planar InAsSb nanowires (NWs) on differently oriented Si substrates without any foreign catalysts. Interestingly, the planar InAsSb NWs grew along four criss-crossed (110) directions on an [100]-oriented substrate, two (100) directions plus four (111) directions on an [110]-oriented substrate, and six equivalent (112) directions on an [111]-oriented substrate, which correspond to the projections of (111) family crystal directions on the substrate planes. High-resolution transmission electron microscopy (HRTEM) reveals that the NWs, experienced a transition from out-of-plane to in-plane growth at the early growth stage but still occurred on the {111} plane, which has the lowest surface energy among all the surfaces. Furthermore, the NWs exhibit a pure zinc-blende crystal structure without any defects. A growth model is presented to explain growth of the NWs. In addition, conductive atomic force microscopy shows that electrically rectifying p-n junctions form naturally between the planar InAsSb NWs and the p-type Si substrates. The results presented here could open up a new route way to fabricate highly integrated III-V nanodevices.
Controlling the growth and field emission properties of silicide nanowire arrays by direct silicification of Ni foil.

Zhihong Liu,Hui Zhang,Lei Wang,Deren Yang

DOI: https://doi.org/10.1088/0957-4484/19/37/375602

IF: 3.5

2008-01-01

Nanotechnology

Abstract:Nickel silicide nanowire arrays have been achieved by the decomposition of SiH4 on Ni foil at 650 degrees C. It is indicated that the nickel silicide nanowires consist of roots with diameter of about 100-200 nm and tips with diameter of about 10-50 nm. A Ni diffusion controlled mechanism is proposed to explain the formation of the nickel silicide nanowires. Field emission measurement shows that the turn-on field of the nickel silicide nanowire arrays is low, at about 3.7 V mu m(-1), and the field enhancement factor is as high as 4280, so the arrays have promising applications as emitters.
Silicon nano-wires grown at low temperature

Junjie Niu,Jian Sha,Lei Wang,Yujie Ji,Deren Yang

DOI: https://doi.org/10.1016/j.physe.2004.12.014

2005-01-01

Physica E: Low-Dimensional Systems and Nanostructures

Abstract:Quantities of crystalline array-orderly silicon nano-wires (SiNWs) were fabricated using chemical-vapor-deposition (CVD) method at low temperature (550–400°C). In the experiments, the decreasing temperature process was used. By means of transmission electron spectroscopy, X-ray diffraction and Raman spectroscopy, it was found that the SiNWs were well crystallized. Finally, the growth mechanism of the SiNWs during the decreasing process was discussed.
A Novel Sulfide-Assisted Growth of Silicon Nano-Wires

JJ Niu,J Sha,ZH Liu,J Yu,ZX Su,Q Yang,DR Yang

DOI: https://doi.org/10.1109/sim.2005.1511409

2004-01-01

Abstract:A large-scale SiNWs with the diameter of /spl sim/20-30 nm and the length of tens of micrometers formed on silicon substrates using a novel evaporation of sulfides (sulphur and zinc sulfide) at /spl sim/1080/spl deg/C were synthesized; The source of SiNWs came from silicon wafers rather than silane gas as reported before. It was found that the tip of SiNWs contained sulfur, while the other positions of SiNWs did not. It is considered that the decomposition of SiS resulted in the formation of SiNWs. As referring to the oxygen-assisted growth model of SiNWs by evaporation of silicon oxide, a corresponding sulfide-assisted model was suggested.
Tuning the morphologies of SiC nanowires via the control of growth temperature, and their photoluminescence properties.

Renbing Wu,Baosheng Li,Mingxia Gao,Jianjun Chen,Qimiao Zhu,Yi Pan

DOI: https://doi.org/10.1088/0957-4484/19/33/335602

IF: 3.5

2008-01-01

Nanotechnology

Abstract:Single crystalline SiC nanowires were synthesized by a catalyst free vapor deposition method using elemental silicon and graphite carbon as the starting materials. The phase, morphology, crystal structure, and defects of the products were characterized by x-ray diffraction, field emission scanning electron microscopy, and transmission electron microscopy. Within a 6 h reaction time, the morphology of the SiC nanowires can be tuned to cylinder, hexagonal prism, or bamboo shape by simply altering the reaction temperature from 1470 degrees C, 1550 degrees C to 1630 degrees C, respectively. The photoluminescence of these differently shaped SiC nanowires was measured and is discussed. Based on the characterization results, the vapor-solid growth mechanisms for the multi-shaped SiC nanowires are proposed by taking into account the possible reactions between intermediate gas phases, the reaction steps, and the surface energy minimization.
Precise morphology control of in-plane silicon nanowires via a simple plasma pre-treatment

Zhaoguo Xue,Wanghua Chen,Xianhong Meng,Jun Xu,Yi Shi,Kunji Chen,Linwei Yu,Pere Roca Cabarrocas

DOI: https://doi.org/10.1016/j.apsusc.2022.153435

IF: 6.7

2022-01-01

Applied Surface Science

Abstract:Silicon nanowires (SiNWs) are advantageous building blocks to explore a wide range of high performance nanoelectmnics and photonics devices. In-plane solid-liquid-solid (IPSLS) SiNWs, grown by metal catalyst droplets that absorb hydrogenated amorphous silicon (a-Si:H) thin film to produce crystalline SiNWs, are particularly suitable for planar device fabrication and integration. Here, we explore a new growth control dimension to tailor the geometry of the in-plane SiNWs from island-chain to zigzag and to straight morphologies by using a simple plasma modification of the a-Si:H thin film precursor. This unique capability is due to fact that the Gibbs energy and bonding status of the a-Si:H layer can be largely modified by the plasma treatments at various substrate temperatures, which in turn have a huge impact on the growth balance condition of the SiNWs and consequently on their morphologies. These results highlight a facile and yet highly effective strategy to tailor the morphologyof in-plane SiNWs that will find important applications in fabricating nanoelectronic, sensor and logic devices.
Controlled synthesis of millimeter-long silicon nanowires with uniform electronic properties.

Won Il Park,Gengfeng Zheng,Xiaocheng Jiang,Bozhi Tian,Charles M Lieber

DOI: https://doi.org/10.1021/nl802063q

IF: 10.8

2008-01-01

Nano Letters

Abstract:We report the nanocluster-catalyzed growth of ultralong and highly uniform single-crystalline silicon nanowires (SiNWs) with millimeter-scale lengths and aspect ratios up to approximately 100,000. The average SiNW growth rate using disilane (Si 2H 6) at 400 degrees C was 31 microm/min, while the growth rate determined for silane (SiH 4) reactant under similar growth conditions was 130 times lower. Transmission electron microscopy studies of millimeter-long SiNWs with diameters of 20-80 nm show that the nanowires grow preferentially along the 110 direction independent of diameter. In addition, ultralong SiNWs were used as building blocks to fabricate one-dimensional arrays of field-effect transistors (FETs) consisting of approximately 100 independent devices per nanowire. Significantly, electrical transport measurements demonstrated that the millimeter-long SiNWs had uniform electrical properties along the entire length of wires, and each device can behave as a reliable FET with an on-state current, threshold voltage, and transconductance values (average +/-1 standard deviation) of 1.8 +/- 0.3 microA, 6.0 +/- 1.1 V, 210 +/- 60 nS, respectively. Electronically uniform millimeter-long SiNWs were also functionalized with monoclonal antibody receptors and used to demonstrate multiplexed detection of cancer marker proteins with a single nanowire. The synthesis of structurally and electronically uniform ultralong SiNWs may open up new opportunities for integrated nanoelectronics and could serve as unique building blocks linking integrated structures from the nanometer through millimeter length scales.
Tiny silicon nano-wires synthesis on silicon wafers

Junjie Niu,Jian Sha,Yujie Ji,Deren Yang

DOI: https://doi.org/10.1016/j.physe.2004.06.041

2004-01-01

Physica E: Low-Dimensional Systems and Nanostructures

Abstract:Tiny silicon nano-wires (SiNWs) were synthesized on silicon wafers by the chemical vapor deposition (CVD) technique. The morphology and structure of tiny SiNWs were analyzed by means of transmission electron microscopy (TEM), scanning electron microscopy (SEM) and X-ray diffraction (XRD), respectively. The results indicate that the tiny SiNWs were part-crystalline structure and were about 3 nm in minimal diameter. Based on the line shift of Raman spectra, the structure transform of the tiny SiNWs was discussed. The defect-inducing growth mechanism will probably provide a new method for the minimum of the one-dimensional nano-materials.
A Simple Approach to Controllably Grow Network-Like Branched Single-Crystalline Si3n4 Nanostructures

Na Zhu,Zhijian Peng,Xiuli Fu,Chengbiao Wang,Zhiqiang Fu,Longhao Qi,Hezhuo Miao

DOI: https://doi.org/10.1016/j.solidstatesciences.2010.04.024

IF: 3.752

2010-01-01

Solid State Sciences

Abstract:We reported a simple, large-scale, and controllable growth method for network-like branched single-crystalline Si3N4 nanostructures by catalyst-assisted pyrolysis of a polysilazane. The templates were a silicon wafer deposited with a 5 nm Fe film. The processes simply involved in thermal cross-linking of the polymer precursor, crushing of the solidified preceramic polymer chunks into fine powder, and thermal pyrolysis of the powder under the protection of ultra-high purity nitrogen. The collected white network-like branched nanostnictures were formed through "metal-absorption on the surface of nanostructures" model by vapor-liquid-solid mechanism. Microstructure characterizations indicate that the nanostructures are single-crystalline hexagonal alpha-Si3N4. The reaction mechanism of Si3N4 nanonetworks was also proposed. (C) 2010 Elsevier Masson SAS. All rights reserved.
Orientation‐Controlled Growth of Single‐Crystal Silicon‐Nanowire Arrays

SP Ge,KL Jiang,XX Lu,YF Chen,RM Wang,SS Fan

DOI: https://doi.org/10.1002/adma.200400474

IF: 29.4

2005-01-01

Advanced Materials

Abstract:Silicon nanowire arrays on silicon substrates can be synthesized with precise orientation depending on the crystal orientation of the substrate using a vapor-liquid-solid epitaxial growth mechanism. The projections of the as-grown arrays form rectangular networks on silicon (100) substrates (see Figure), parallel straight lines on silicon (110) substrates, and triangular networks on silicon (111) substrates.
Operating Principles of In-Plane Silicon Nanowires at Simple Step-Edges

Mingkun Xu,Zhaoguo Xue,Linwei Yu,Shengyi Qian,Zheng Fan,Junzhuan Wang,Jun Xu,Yi Shi,Kunji Chen,Pere Roca i Cabarrocas

DOI: https://doi.org/10.1039/c4nr06531j

IF: 6.7

2015-01-01

Nanoscale

Abstract:Growing silicon nanowires (SiNWs) into precise locations is a key enabling technology for SiNW-based device applications. This can be achieved via in-plane growth of SiNWs along a simple step-edge, where metal catalyst droplets absorb an amorphous Si matrix to produce c-SiNWs. However, a comprehensive understanding of this phenomenon is still lacking. We here establish an analytical model to address the driving force that dictates the growth dynamics under various droplet-step contact configurations, and to identify the key control parameters for effective guided growth. These new principles were verified against a series of experimental observations and proved to be powerful in designing a stable guided growth configuration. Furthermore, we propose and demonstrate a unique ability to achieve in situ capturing, guiding and release of the in-plane SiNWs along curved step-edges. We suggest that such a new understanding and results provide a fundamental basis and a practical guide for positioning and integrating self-assembled nanowires in a wide variety of material systems.
Growth Control of In-Plane Silicon Nanowires Via Catalyst Size-Dependent Laser Heating for High-Performance Electronics

Yinzi Cheng,Zongguang Liu,Ruijin Hu,Junzhuan Wang,Jun Xu,Linwei Yu

DOI: https://doi.org/10.1021/acsanm.4c02962

IF: 6.14

2024-01-01

ACS Applied Nano Materials

Abstract:The in-plane growth of high-quality crystalline silicon nanowires (SiNWs) guided by laser-heated metal catalysts provides a solid one-dimensional channel material for the integration of high-performance Si-based electronics, while the growth control of these SiNWs remains an unexplored problem. In this study, we demonstrate that the laser-heated growth of IPSLS SiNWs can be modulated by the diameter of leading catalysts. The large catalysts with a diameter of similar to 220 nm were directly heated under continuous laser illumination by a typical selected laser-droplet-heating mode, which resulted in the rapid growth of high-quality SiNWs with a large diameter of 166 +/- 27 nm. Conversely, the small catalysts (diameter of <130 nm) can only be activated by the underlying silicon substrate heated under laser illumination, allowing the rapid growth of thin SiNWs of 74 +/- 9 nm within 30 s. The different growth modes can be explained by a size-dependent heating theory of nanoscale catalysts with laser illumination. This study proposes a comprehensive understanding of the growth and diameter control of in-plane SiNWs under laser illumination, providing high-quality channel arrays for the construction of Si-based electronics.
In-plane Epitaxial Growth of Silicon Nanowires and Junction Formation on Si(100) Substrates.

Linwei Yu,Mingkun Xu,Jie Xu,Zhaoguo Xue,Zheng Fan,Gennaro Picardi,Franck Fortuna,Junzhuan Wang,Jun Xu,Yi Shi,Kunji Chen,Pere Roca i Cabarrocas

DOI: https://doi.org/10.1021/nl503001g

IF: 10.8

2014-01-01

Nano Letters

Abstract:Growing self-assembled silicon nanowires (SiNWs) into precise locations represents a critical capability to scale up SiNW-based functionalities. We here report a novel epitaxy growth phenomenon and strategy to fabricate orderly arrays of self-aligned in-plane SiNWs on Si(100) substrates following exactly the underlying crystallographic orientations. We observe also a rich set of distinctive growth dynamics/modes that lead to remarkably different morphologies of epitaxially grown SiNWs/or grains under variant growth balance conditions. High-resolution transmission electron microscopy cross-section analysis confirms a coherent epitaxy (or partial epitaxy) interface between the in-plane SiNWs and the Si(100) substrate, while conductive atomic force microscopy characterization reveals that electrically rectifying p-n junctions are formed between the p-type doped in-plane SiNWs and the n-type c-Si(100) substrate. This in-plane epitaxy growth could provide an effective means to define nanoscale junction and doping profiles, providing a basis for exploring novel nanoelectronics.
Epitaxial Growth of Ordered In-Plane Si and Ge Nanowires on Si (001)

Jian-Huan Wang,Ting Wang,Jian-Jun Zhang

DOI: https://doi.org/10.3390/nano11030788

IF: 5.3

2021-03-19

Nanomaterials

Abstract:Controllable growth of wafer-scale in-plane nanowires (NWs) is a prerequisite for achieving addressable and scalable NW-based quantum devices. Here, by introducing molecular beam epitaxy on patterned Si structures, we demonstrate the wafer-scale epitaxial growth of site-controlled in-plane Si, SiGe, and Ge/Si core/shell NW arrays on Si (001) substrate. The epitaxially grown Si, SiGe, and Ge/Si core/shell NW are highly homogeneous with well-defined facets. Suspended Si NWs with four {111} facets and a side width of about 25 nm are observed. Characterizations including high resolution transmission electron microscopy (HRTEM) confirm the high quality of these epitaxial NWs.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology,chemistry
High-fidelity Moulding Growth and Cross-section Shaping of Ultrathin Monocrystalline Silicon Nanowires

Yifei Liang,Wentao Qian,Ruijin Hu,Xin Gan,Shuqi Shi,Yating Li,Junzhuan Wang,Zongguang Liu,Daowei He,Yi Shi,Jun Xu,Kunji Chen,Linwei Yu

DOI: https://doi.org/10.1016/j.apsusc.2023.157635

IF: 6.7

2023-05-31

Applied Surface Science

Abstract:Catalytic growth of ultrathin silicon nanowires (SiNWs) provides ideal 1D channel materials for the construction of high-performance field effect transistors, where the diameter, uniformity and crystalline qualities are of utmost importance. In this work, a high-fidelity moulding growth of orderly ultrathin monocrystalline SiNWs, with diameter of 17±2nm , has been accomplished within tightly confined nanogrooves. A continuous and deterministic groove-width-transition or squeezing strategy has also been developed to accomplish an effective cross-section tailoring of the as-grown SiNW channels, while enabling a close-to-unity growth filling rate within the guiding grooves. Finally, a size-dependent adatom-searching model is proposed to explain how a monocrystalline SiNWs can be obtained even at such a low growth temperature of <350 °C. These results indicate a feasible catalytic growth fabrication route to implement monolithic 3D integration of advanced in-memory-computing and neuromorphic electronics.

chemistry, physical,physics, applied, condensed matter,materials science, coatings & films
Growth of SiC Nanowires from NiSi Solution

Renbing Wu,Guangyi Yang,Mingxia Gao,Baosheng Li,Jianjun Chen,Rui Zhai,Yi Pan

DOI: https://doi.org/10.1021/cg701101j

IF: 4.01

2009-01-01

Crystal Growth & Design

Abstract:We present a simple melt solution strategy for the growth of high-yield SiC nanowires out of NiSi solution. The growth temperature and base vacuum before filling argon during the reaction are found to have a significant effect on the morphology of the product growth. Taking into consideration the action of Ni in the NiSi melt and the possible participation of a tiny amount of oxygen, the formation of SiC nanowires is discussed by a combination of the solid-liquid-solid reaction for nucleation and the vapor-liquid-solid process for nanowire growth. The nanowires were also investigated with Raman spectroscopy. Such a simple and economical method may be extended to synthesize other one-dimensional nanostructures.
On the 2H- to 3C-Type Transformation and Growth Mechanism of SiC Nanowires upon Carbothermal Reduction of Rice Straws

Chang-Ning Huang,Jhong-Yeh Lee,Cheng-Chien Wang

DOI: https://doi.org/10.1021/acsomega.1c05992

IF: 4.1

2022-02-03

ACS Omega

Abstract:SiC nanowires (NWs) and nanoparticles (NPs) fabricated by carbothermal reduction of rice straws with/without FeSi catalysts were characterized by transmission electron microscopy to study the catalyst-facilitated vapor-liquid-solid (VLS) growth against the oriented attachment of the crystals, which underwent 2H- to 3C-type transformation. The cotectic melt of the FeSi catalyst in the Fe-Si-C-O system turned out to promote the VLS growth to form straight and occasionally tapered NWs in contrast to the zigzag ones via the (hkl)-specific coalescence of the faceted NPs. The SiC NWs showed [0001]2H-directed growth more or less stacked with {111}3C interlayers following the optimum crystallographic relationship (0001)2H//{111̅}3C; [21̅1̅0]2H//⟨101⟩3C with zigzag {111}3C lateral steps and polysynthetic twins/faults near the (0001)2H/(111)3C interface. The FeSi-assisted VLS growth and twinning/stacking fault-coupled 2H to 3C phase change may be extended to novel green manufacturing and design of sustainable resources for other semiconductor NWs.
Solution-Liquid-Solid Growth of Semiconductor Nanowires

Fudong Wang,Angang Dong,Jianwei Sun,Rui Tang,Heng Yu,William E. Buhro

DOI: https://doi.org/10.1021/ic060498r

IF: 4.6

2006-01-01

Inorganic Chemistry

Abstract:The serendipitously discovered solution-liquid-solid (SLS) mechanism has been refined into a nearly general synthetic method for semiconductor nanowires. Purposeful control of diameters and diameter distributions is achieved. The synthesis proceeds by a solution-based catalyzed-growth mechanism in which nanometer-scale metallic droplets catalyze the decomposition of metallo-organic precursors and crystalline nanowire growth. Related growth methods proceeding by the analogous vapor-liquid-solid (VLS) and supercritical fluid-liquid-solid (SFLS) mechanisms are known, and the relative attributes of the methods are compared. In short, the VLS method is most general and appears to afford nanowires of the best crystalline quality. The SLS method appears to be advantageous for producing the smallest nanowire diameters and for variation and control of surface ligation. The SFLS method may represent an ideal compromise. Recent results for SLS growth are summarized.

Precise Control on the Growth of Sic Nanowires

Ultrafast growth of single-crystalline Si nanowires

Morphology Control in the Vapor−Liquid−Solid Growth of SiC Nanowires

Controlled-Direction Growth of Planar InAsSb Nanowires on Si Substrates Without Foreign Catalysts

Controlling the growth and field emission properties of silicide nanowire arrays by direct silicification of Ni foil.

Silicon nano-wires grown at low temperature

A Novel Sulfide-Assisted Growth of Silicon Nano-Wires

Tuning the morphologies of SiC nanowires via the control of growth temperature, and their photoluminescence properties.

Precise morphology control of in-plane silicon nanowires via a simple plasma pre-treatment

Controlled synthesis of millimeter-long silicon nanowires with uniform electronic properties.

Tiny silicon nano-wires synthesis on silicon wafers

A Simple Approach to Controllably Grow Network-Like Branched Single-Crystalline Si3n4 Nanostructures

Orientation‐Controlled Growth of Single‐Crystal Silicon‐Nanowire Arrays

Operating Principles of In-Plane Silicon Nanowires at Simple Step-Edges

Growth Control of In-Plane Silicon Nanowires Via Catalyst Size-Dependent Laser Heating for High-Performance Electronics

In-plane Epitaxial Growth of Silicon Nanowires and Junction Formation on Si(100) Substrates.

Epitaxial Growth of Ordered In-Plane Si and Ge Nanowires on Si (001)

High-fidelity Moulding Growth and Cross-section Shaping of Ultrathin Monocrystalline Silicon Nanowires

Growth of SiC Nanowires from NiSi Solution

On the 2H- to 3C-Type Transformation and Growth Mechanism of SiC Nanowires upon Carbothermal Reduction of Rice Straws

Solution-Liquid-Solid Growth of Semiconductor Nanowires