Abstract:GaAsSb semiconductor material, a ternary alloy, has long been recognized as a crucial semiconductor in the near infrared range due to its ability to finely adjust the wavelength through controlling the Sb component. In this work, we report on the pattern of orientation variation in self-catalyzed grown GaAsSb nanowires (NWs). Utilizing solid-source molecular-beam epitaxy (MBE), self-catalyzed GaAs and GaAsSb nanowires (NWs) were grown on Si (111) substrates. The influence of various Sb components on the growth direction of the nanowires in the ternary GaAsSb alloy was examined using scanning electron microscopy (SEM). The inclusion of Sb components was discovered to alter the growth direction of the nanowires, transitioning them from a vertical and inclined orientation to a configuration that encompassed vertical, inclined, and parallel orientations with respect to the Si (111) substrate. As the Sb component in GaAsSb increased, there was an increased likelihood of the nanowires growing parallel to the surface of the Si (111) substrate. A combination of X-ray diffraction (XRD) and Raman spectroscopy validated the presence of Sb components and indicated a high crystalline quality. Additionally, XRD confirmed that the Sb components aligned with the intended structure. These findings establish a solid material foundation for the development of high-performance GaAsSb-based devices.

Epitaxial Growth of Ordered In-Plane Si and Ge Nanowires on Si (001)

Controlled-Direction Growth of Planar InAsSb Nanowires on Si Substrates Without Foreign Catalysts

In-plane Epitaxial Growth of Silicon Nanowires and Junction Formation on Si(100) Substrates.

Epitaxial Growth of Vertically Free-Standing Ultra-Thin Silicon Nanowires.

Controllable growth of GeSi nanostructures by molecular beam epitaxy

The Vapor-Solid-Solid Growth of Ge Nanowires on Ge (110) by Molecular Beam Epitaxy

A Novel Sulfide-Assisted Growth of Silicon Nano-Wires

Ge Molecular Beam Epitaxy on Si(113): Surface Structures, Nanowires and Nanodots

Orientation‐Controlled Growth of Single‐Crystal Silicon‐Nanowire Arrays

A nano-droplet hydrodynamic transformation of uniform amorphous bilayer into highly modulated Ge/Si island-chains.

Study of Si and Ge growth on Si(100) surface

Oriented Growth of Ge Nanowires with Diameters below the Bohr Radius

Self-controlled growth of highly uniform Ge/Si hut wires for scalable qubit devices

Single-crystal germanium layers grown on silicon by nanowire seeding

Array-orderly single crystalline silicon nano-wires

Tiny silicon nano-wires synthesis on silicon wafers

Terrace-confined guided growth of high-density ultrathin silicon nanowire array for large area electronics

Operating Principles of In-Plane Silicon Nanowires at Simple Step-Edges

Control of Ge island coalescence for the formation of nanowires on silicon.

The Self-Catalyzed Growth of GaAsSb Nanowires on a Si (111) Substrate Using Molecular-Beam Epitaxy

A Promising Routine to Fabricate GeSi Nanowires Via Self-Assembly on Miscut Si (001) Substrates