Abstract:Substrates with controlled surface morphologies are used to quantify the kinetics of surface mass transport during Stranski-Krastanov growth of epitaxial nanostructures. Morphologies are modified by laser texturing; tightly focused nanosecond laser pulses are used to produce micron-scale dimples on the surface of Si(001) substrates. The areal densities of three-dimensional Ge islands formed by chemical vapor deposition on these modified substrates is measured by atomic force microscopy for a wide range of Ge coverages (3-10 ML), temperatures (500<T<700 degreesC), and deposition rates (0.003<F<0.3 ML s(-1)). Island nucleation is enhanced at the vicinal surfaces surrounding the rim of the laser dimples, and, as a consequence, a denuded zone with a reduced island density surrounds each dimple. The width of the denuded zone can be as large as 50 times the island spacing and is created by extensive mass transport during the formation of the wetting layer. Mass transport is driven by chemical-potential gradients associated with the wetting-layer thickness, substrate vicinality, and the elastic relaxation of three-dimensional islands. We find excellent agreement between the data and a one-dimensional model calculation of diffusion and nucleation; the fit to the model gives a transport rate of Dn(0)approximate to1.5x10(5) s(-1) at 600 degreesC and an activation energy E-f+E(m)approximate to1.3 eV.

Study of Si and Ge growth on Si(100) surface

Growth and Microstructures of High Density Ge Quantum Dots on SiO_2 Layers

Study on silicon molecular beam epitaxial layer morphology by scanning tunneling microscopy

Study of Si1-xGEx epitaxy growth on Si(100) and Si(111)

Study on Growth and Morphology Properties of Ge/Si (100) Quantum Dots

Surface Morphology During Multilayer Epitaxial Growth of Ge(001).

Surface Mass Transport and Island Nucleation During Growth of Ge on Laser Textured Si(001)

Molecular Dynamics Study on Sputtering Growth of Ge/Si(100)2×1 Film

Ge Molecular Beam Epitaxy on Si(113): Surface Structures, Nanowires and Nanodots

The growth and investigation of SiGe films on buried Ge islands

Pathway for the Strain-Driven Two-Dimensional to Three-Dimensional Transition During Growth of Ge on Si(001)

Structure transition of Ge/Si(113) surfaces during Ge epitaxial growth

Growth of Ge quantum dots on SiO2/Si(111) surface

Structure transition of Ge/Si(1 1 3) surfaces during Ge epitaxial growth

Epitaxial growth of high-quality Ge layers on Si with Ge2H6 under UHV-CVD conditions

Self-Organized Growth of Sub-Monolayer Ge on Si(111)-(7 X 7)

Selective Area Growth of Ge Film on Si

Growth of Near Planar Si0.5 Ge0.5 Epitaxial Layers Directly on Si Substrate by UHV/CVD at 500℃

Comprehensive material study of Ge grown by aspect ratio trapping on Si substrate

Growth of Ge Hexagonal Meshwork Films on Si(111)-7 × 7

Heteroepitaxial Growth of Ge Films on Si Substrates by Molecular-Beam Epitaxy