Abstract:The formation of NiSi1−xGex on Si1−xGex(111) substrates with x=0, 0.05, and 0.20 at an annealing temperature of 500°C has been studied by x-ray diffraction, transmission electron microscopy, and pole-figure measurements. NiSi formed preferentially oriented on Si, with (100), (001), and (102) parallel to Si(111) and NiSi[010]‖Si⟨211⟩. In NiSi0.95Ge0.05, (001) and (102) maintained their preferential orientations, whereas NiSi0.95Ge0.05(100) was rotated by 30°, so that NiSi0.95Ge0.05[010]‖Si0.95Ge0.05⟨011⟩. An epitaxial alignment in the form of a double axiotaxy, with NiSi0.95Ge0.05(2±11) as well as (20−2)‖Si0.95Ge0.05{220}, simultaneously with NiSi0.95Ge0.05(0±13) as well as (020)‖Si0.95Ge0.05{022}, caused NiSi0.95Ge0.05(100) to tilt over the range of 0°–7.5°. The Ge addition also enhanced the preferentially oriented structure by reinforcing NiSi0.95Ge0.05(123)‖Si0.95Ge0.05(111) through the axiotaxial alignments, NiSi0.95Ge0.05(211) and (−112)‖Si0.95Ge0.05{220}. Observed was also the presence of NiSi0.95Ge0.05(011)‖Si0.95Ge0.05(111), with NiSi0.95Ge0.05[100]‖Si0.95Ge0.05⟨011⟩. In the case of NiSi0.80Ge0.20, the preferential orientations were sharply reduced in favor of NiSi0.80Ge0.20(100)‖Si0.80Ge0.20(111), with NiSi0.80Ge0.20[010]‖Si0.80Ge0.20⟨011⟩ and the 30° rotation thus preserved. The observed Ge influence is shown to be consistent with a model suggested earlier for Si1−xGex(001) substrates, which is based on the nonexistence of Ni(Si1−xGex)2 for all except the smallest values of x. High-resolution transmission electron microscopy was used to show that the surface steps typical of molecular-beam-deposited epitaxial Si1−xGex substrate films do not influence the growth of the NiSi1−xGex.

Molecular-dynamics simulation of Si1−xGex epitaxial growth on Si(100)

Molecular-dynamics simulation of Si1-xGex epitaxial growth on Si(1 0 0)

Study of Si1-xGEx epitaxy growth on Si(100) and Si(111)

Study of Si and Ge growth on Si(100) surface

Kinetics and transport model for the chemical vapor epitaxy of GexSi1-x

The dependence of GexSi1-x epitaxial growth on GeH4 flow using chemical vapour deposition

Synthesis and Characterization of Heteroepitaxial Gan Films on Si(111)

A Dislocation-Driven Laminated Relaxation Process in Si1−xGex Grown on Si (001) by Molecular Beam Epitaxy

Influence of Germanium on the Formation of NiSi1−xGex on (111)-Oriented Si1−xGex

Tight-binding Study of the Strained Monolayer Superlattices (si)1/(si1−xgex)1 (100)

Kinetics and transport model of GexSi1-x chemical vapor epitaxy

Kinetics and fluid-dynamics analysis of GexSi1-x low pressure chemical vapor epitaxy

Study of Ge Epitaxial Growth on Si Substrates by Cluster Beam Deposition

Single-Crystalline Si1-Xgex (X=0.5 Similar To 1) Thin Films On Si (001) With Low Threading Dislocation Density Prepared By Low Temperature Molecular Beam Epitaxy

Electronic Structures of Strained Layer Superlattices (Si)m/(Si1-xGex)m(100) with m=1 and m=2n (n=1-10)

Heteroepitaxial Growth of GexSi1-x Strained Layer on Si by RRH/VLP-CVD

Effect of Stresses on Defect Nucleation in Si1-xGex/Si Heteroepitaxial Systems

Strain Relaxation and Defect Formation in Heteroepitaxial Si1−xGex Films Via Surface Roughening Induced by Controlled Annealing Experiments

Simulation on Ion Implantation into SiGe Substrate

Germanium-Induced Texture And Preferential Orientation Of Nisi1-Xgex Layers On Si1-Xgex

The effects of carbon incorporation during GSMBE of Si1−yCy and Si1−x−yGexCy: growth dynamics and segregation