Abstract:Co-condensation of mixed SiGe nanoclusters and impingement of SiGe nanoclusters on a Si substrate were applied using molecular dynamics (MD) simulation in this study to mimic the fast epitaxial growth of SiGe/Si heterostructures under mesoplasma chemical vapor deposition (CVD) conditions. The condensation dynamics and properties of the SiGe nanoclusters during the simulations were investigated first, and then the impingement of transient SiGe nanoclusters on both Si smooth and trench substrate surfaces under varying conditions was studied theoretically. The results show that the mixed nanoclusters as precursors demonstrate potential for enhancing epitaxial SiGe film growth at a high growth rate, owing to their loosely bound atomic structures and high mobility on the substrate surface. By varying cluster sizes and substrate temperatures, this study also reveals that smaller clusters and higher substrate temperatures contribute to faster structural ordering and smoother surface morphologies. Furthermore, the formed layers display a consistent SiGe composition, closely aligning with nominal values, and the cluster-assisted deposition method achieves the epitaxial bridging of heterostructures during cluster impingement, highlighting its additional distinctive characteristics. The implications of this work make it clear that the mechanism of fast alloyed epitaxial film growth by cluster-assisted mesoplasma CVD is critical for extending it as a versatile platform for synthesizing various epitaxial films.

Study of Ge Epitaxial Growth on Si Substrates by Cluster Beam Deposition

Growth of Ge films by cluster beam deposition

Growth and Microstructures of High Density Ge Quantum Dots on SiO_2 Layers

Simulation study on Si and Ge film growth by cluster deposition

Study of Si and Ge growth on Si(100) surface

Molecular-dynamics Simulation of Ge Film Growth by Cluster Deposition

Molecular-dynamics Simulation of Germanium Film Growth by Cluster Deposition

Molecular beam epitaxy growth of Ge on Si(111) substrates covered by a SiO2 mask

Heteroepitaxial Growth of Ge Films on Si Substrates by Molecular-Beam Epitaxy

Growth of Ge-Si strained layers and DC XRD study on epitaxial films

Cluster-Assisted Mesoplasma Chemical Vapor Deposition for Fast Epitaxial Growth of SiGe/Si Heterostructures: A Molecular Dynamics Simulation Study

Epitaxial Ge thin film Growth on Si Using a Cost-Effective Process in Simplified CVD Reactor

Molecular-dynamics simulation of Si1-xGex epitaxial growth on Si(1 0 0)

Island-growth of SiCGe films on SiC

Epitaxial growth of high-quality Ge layers on Si with Ge2H6 under UHV-CVD conditions

High-quality Ge film grown on Si substrate and its thermodynamic mechanism

Chemical Vapor Deposition of Ge on GaN/Al2O3(0001) Substrates

Study on silicon molecular beam epitaxial layer morphology by scanning tunneling microscopy

Study of GeSi Alloy Deposition on Ge Substrate by Very Low-Pressure Chemical Vapor Deposition

Influence of Sb as surfactant on Ge epitaxial growth on Si(001)

Study of Si1-xGEx epitaxy growth on Si(100) and Si(111)