Abstract:Fully-coherent Si0.7Ge0.3 layers were deposited on Si(001) by gas-source molecular beam epitaxy (GS-MBE) from Ge2H6/Si2H6 mixtures in order to probe the effect of steady-state hydrogen coverages θH on surface morphological evolution during the growth of compressively strained films. The layers are grown as a function of thickness t at temperatures, Ts=450–550 °C, for which strain-induced roughening is observed during solid-source MBE (SS-MBE) and deposition from hyperthermal beams. With GS-MBE, we obtain three-dimensional (3D) strain-induced growth mounds in samples deposited at Ts=550 °C for which θH is small, 0.11 monolayer (ML). However, mound formation is dramatically suppressed at 500 °C (θH=0.26 ML) and completely eliminated at 450 °C (θH=0.52 ML). We attribute these large differences in surface morphological evolution primarily to θH(Ts)-induced effects on film growth rates R, adatom diffusion rates Ds, and ascending step-crossing probabilities. GS-MBE Si0.7Ge0.3(001) growth at 450 °C remains two dimensional, with a surface width 〈w〉<0.15 nm, at all film thicknesses t=11–80 nm, since both R and the rate of mass transport across ascending steps are low. Raising Ts to 500 °C increases R faster than Ds leading to shorter mean surface diffusion lengths and the formation of extremely shallow, rounded growth mounds for which 〈w〉 remains essentially constant at ≃0.2 nm while the in-plane coherence length 〈d〉 increases from ≃70 nm at t=14 nm to 162 nm with t=75 nm. The low ascending step crossing probability at 500 °C results in mounds that spread laterally, rather than vertically, due to preferential attachment at the mound edges. At Ts=550 °C, the ascending step crossing probability increases due to both higher thermal activation and lower hydrogen coverages. 〈w〉(t) increases by more than a factor of 10, from 0.13 nm at t=15 nm to 1.9 nm at t=105 nm, while the in-plane coherence length 〈d〉 remains constant at ≃85 nm. This leads, under the strain driving force, to the formation of self-organized 3D {105}-faceted pyramids at 550 °C which are very similar to those observed during SS-MBE.

Heteroepitaxial Growth of Ge Films on Si Substrates by Molecular-Beam Epitaxy

Epitaxial growth of low dislocation Ge thin films on Si (001) substrates using a Si-Ge intermediate layer

Epitaxial growth of high-quality Ge layers on Si with Ge2H6 under UHV-CVD conditions

Hydrogen-Mediated Quenching of Strain-Induced Surface Roughening During Gas-Source Molecular Beam Epitaxy of Fully-Coherent Si0.7ge0.3 Layers on Si(001)

Study of Si and Ge growth on Si(100) surface

Molecular beam epitaxy growth of Ge on Si(111) substrates covered by a SiO2 mask

Growth of Ge-Si strained layers and DC XRD study on epitaxial films

High quality Ge-rich SiGe thin films epitaxially grown on Si at low temperature by two-step approach

Epitaxial Ge thin film Growth on Si Using a Cost-Effective Process in Simplified CVD Reactor

Surface Morphology During Multilayer Epitaxial Growth of Ge(001).

Selective Area Growth of Ge Film on Si

High-quality Ge film grown on Si substrate and its thermodynamic mechanism

Molecular Beam Epitaxy Growth of Gaas on an Offcut Ge Substrate

Growth of Thick Ge Epitaxial Layers with Low Dislocation Density on Silicon Substrate by UHV/CVD

Van Der Waals Epitaxy of Ge Films on Mica

Optimization of Hetero-Epitaxial Growth for the Threading Dislocation Density Reduction of Germanium Epilayers

Epitaxial growth of thick Ge layers with low dislocation density on silicon substrate by UHV/CVD

Ultrathin Low Temperature Si0.75Ge0.25/Si Buffer Layer for the Growth of High Quality Ge Epilayer on Si (100) by RPCVD

High quality Ge epilayer on Si (100) with an ultrathin Si1-xGex/Si buffer layer by RPCVD

Growth of Ge Layer on Relaxed Ge-Rich SiGe by Ultrahigh Vacuum Chemical Vapor Deposition

The Growth of GeSn Layer on Patterned Si Substrate by MBE Method