Abstract:GeSn materials have attracted considerable attention for their tunable band structures and high carrier mobilities, which serve well for future photonic and electronic applications. This research presents a novel method to incorporate Sn content as high as 18% into GeSn layers grown at 285–320 °C by using SnCl4 and GeH4 precursors. A series of characterizations were performed to study the material quality, strain, surface roughness, and optical properties of GeSn layers. The Sn content could be calculated using lattice mismatch parameters provided by X-ray analysis. The strain in GeSn layers was modulated from fully strained to partially strained by etching Ge buffer into Ge/GeSn heterostructures . In this study, two categories of samples were prepared when the Ge buffer was either laterally etched onto Si wafers, or vertically etched Ge/GeSnOI wafers which bonded to the oxide. In the latter case, the Ge buffer was initially etched step-by-step for the strain relaxation study. Meanwhile, the Ge/GeSn heterostructure in the first group of samples was patterned into the form of micro-disks. The Ge buffer was selectively etched by using a CF4/O2 gas mixture using a plasma etch tool. Fully or partially relaxed GeSn micro-disks showed photoluminescence (PL) at room temperature. PL results showed that red-shift was clearly observed from the GeSn micro-disk structure, indicating that the compressive strain in the as-grown GeSn material was partially released. Our results pave the path for the growth of high quality GeSn layers with high Sn content, in addition to methods for modulating the strain for lasing and detection of short-wavelength infrared at room temperature.

Tensile-strained Ge 1− x Sn x layers on Si(001) substrate by solid phase epitaxy featuring seed layer introduction

Epitaxial Growth Of Ge1-Xsnx Films With X Up To 0.14 Grown On Ge (00l) At Low Temperature

Formation of GeSn layers on Si (001) substrates at high growth temperature and high deposition rate by sputter epitaxy method

Heteroepitaxial Growth of Ge Films on Si Substrates by Molecular-Beam Epitaxy

Germanium-Induced Texture And Preferential Orientation Of Nisi1-Xgex Layers On Si1-Xgex

Strain Relaxation in Heteroepitaxial Si<sub>1-x</sub>Ge<sub>x</sub> Films via Surface Roughening Processes

Nanoscale Growth of a Sn-guided SiGeSn Alloy on Si (111) Substrates by Molecular Beam Epitaxy

Strain study of partially relaxed Ge epilayers on Si (100) substrate

Study of Si and Ge growth on Si(100) surface

Epitaxial growth of low dislocation Ge thin films on Si (001) substrates using a Si-Ge intermediate layer

Growth of single crystalline GeSn alloy epilayer on Gd 2 O 3 /Si (111) engineered insulating substrate using RF sputtering and solid phase epitaxy

Strain Relaxation and Defect Formation in Heteroepitaxial Si1−xGex Films Via Surface Roughening Induced by Controlled Annealing Experiments

The Epitaxial Growth of Ge and GeSn Semiconductor Thin Films on C-Plane Sapphire

Growth and Strain Modulation of GeSn Alloys for Photonic and Electronic Applications

Strain Relaxation in Heteroepitaxial Si1-xGex Films via Surface Roughening Processes

Fabrication of Strained Ge Film Using a Thin SiGe Virtual Substrate

Epitaxial growth of high-quality Ge layers on Si with Ge2H6 under UHV-CVD conditions

Influence of Sb as surfactant on Ge epitaxial growth on Si(001)

Effect of Stresses on Defect Nucleation in Si<sub>1−.x</sub>Ge<sub>x</sub>/Si Heteroepitaxial Systems

Thickness-dependent behavior of strain relaxation and Sn segregation of GeSn epilayer during rapid thermal annealing

Growth of Ge-Si strained layers and DC XRD study on epitaxial films