Abstract:Ge/SiGe multi-quantum well heterostructures are highly sought-after for silicon-integrated optoelectronic devices operating in the broad range of the electromagnetic spectrum covering infrared to terahertz wavelengths. However, the epitaxial growth of these heterostructures at a thickness of a few micrometers has been a challenging task due to the lattice mismatch and its associated instabilities resulting from the formation of growth defects. To elucidate these limits, we outline herein a process for the strain-balanced growth on silicon of 11.1/21.5 nm Ge/Si 0.18 Ge 0.82 superlattices (SLs) with a total thickness of 16 μ m corresponding to 500 periods. Composition, thickness, and interface width are preserved across the entire SL heterostructure, which is an indication of limited Si–Ge intermixing. High crystallinity and low defect density are obtained in the Ge/Si 0.18 Ge 0.82 layers; however, the dislocation pileup at the interface with the growth substrate induces micrometer-long cracks on the surface. This eventually leads to significant layer tilt in the strain-balanced SL and in the formation of millimeter-long, free-standing flakes. These results confirm the local uniformity of structural properties and highlight the critical importance of threading dislocations in shaping the wafer-level stability of thick multi-quantum well heterostructures required to implement effective silicon-compatible Ge/SiGe photonic devices.

Epitaxial growth of low dislocation Ge thin films on Si (001) substrates using a Si-Ge intermediate layer

Optimization of Hetero-Epitaxial Growth for the Threading Dislocation Density Reduction of Germanium Epilayers

Heteroepitaxial Growth of Ge Films on Si Substrates by Molecular-Beam Epitaxy

High-quality Ge film grown on Si substrate and its thermodynamic mechanism

Relaxed Ge0.9si0.1 Alloy Layers with Low Threading Dislocation Densities Grown on Low-Temperature Si Buffers

A Dislocation-Driven Laminated Relaxation Process in Si1−xGex Grown on Si (001) by Molecular Beam Epitaxy

Single-Crystalline Si1-Xgex (X=0.5 Similar To 1) Thin Films On Si (001) With Low Threading Dislocation Density Prepared By Low Temperature Molecular Beam Epitaxy

Fabrication of Strained Ge Film Using a Thin SiGe Virtual Substrate

Epitaxial Growth of Fully Relaxed Si0.75Ge0.25 on SOI Substrate

Epitaxial growth of high-quality Ge layers on Si with Ge2H6 under UHV-CVD conditions

Strain Relaxation and Misfit Dislocation in SiGe Epilayers Grown in Micron Size Windows by MBE

Growth of Ge Layer on Relaxed Ge-Rich SiGe by Ultrahigh Vacuum Chemical Vapor Deposition

Relaxed GeSi Alloy Grown on Low-Temperature Buffers by MBE

500-period epitaxial Ge/Si0.18Ge0.82 multi-quantum wells on silicon

High-Quality Ge Films on Si Substrates Using Sb Surfactant-Mediated Graded Sige Buffers

High-quality germanium growth on (111)-faceted V-groove silicon by molecular beam epitaxy

Ge/Si superlatices grown on thin relaxed GeSi alloy buffer with Ge islanding buried layer

Epitaxy of GaAs thin film with low defect density and smooth surface on Si substrate

Fabrication of High Quality SiGe Virtual Substrates by Combining Misfit Strain and Point Defect Techniques

Strain Relaxation Of Gesi Alloy With Low Dislocation Density Grown On Low-Temperature Si Buffers

Growth Mechanisms in Thin Film Epitaxy of Si/Sige from Hydrides