Abstract:Surface roughening associated with strain relaxation of Si1-xGex films grown epitaxially on (100) Si substrates has been investigated using transmission electron microscopy, atomic force microscopy and x-ray diffraction. Epitaxial films 100 Å in thickness and containing 18% Ge, which are subcritical with respect to the formation of misfit dislocations, show strain relaxation through surface roughening on annealing at 700 °C. Enhanced surface grooves aligned along <100> directions are observed in films annealed at 850 °C. Strain relaxation as measured by x-ray diffraction is significantly greater at the higher temperature. Prolonged anneals at 850 °C also result in islanding. The surface roughening processes have also been studied in subcritical films with 15% Ge at 900 °C. These films also show enhanced grooving aligned along <100> directions. These observations are consistent with an anisotropic elastic analysis which indicates that grooving should occur preferentially along <100> directions. Intermixing effects in these samples have also been investigated through depth profiling using Auger Electron Spectroscopy. In addition to the above subcritical films, other films with 18% and 22% Ge and supercritical thicknesses have also been studied. For these films, surface grooving is observed along <110> directions, which suggests that these grooves are related to the formation of misfit dislocation networks. The role of these surface roughening processes in the nucleation of dislocations has also been explored.

Epitaxial Growth of Fully Relaxed Si0.75Ge0.25 on SOI Substrate

High quality partially relaxed SiGe film grown on silicon-on-insulator substrate by ultra-high vacuum chemical vapor deposition

Growth of Ultrathin Si1-xGex Films on Si Substrate for Fabricating SGOI

A Dislocation-Driven Laminated Relaxation Process in Si1−xGex Grown on Si (001) by Molecular Beam Epitaxy

Epitaxial growth of low dislocation Ge thin films on Si (001) substrates using a Si-Ge intermediate layer

Investigation of Strain-Relaxed SiGe Thin Film Grown on Ion-Implanted Si Compliant Substrate

Strain study of partially relaxed Ge epilayers on Si (100) substrate

Strain Relaxation and Misfit Dislocation in SiGe Epilayers Grown in Micron Size Windows by MBE

Strain Relaxation in Heteroepitaxial Si<sub>1-x</sub>Ge<sub>x</sub> Films via Surface Roughening Processes

High-quality Ge film grown on Si substrate and its thermodynamic mechanism

Growth of Fully Relaxed Si0. 83Ge0. 17 Layer Free of Dislocations by UHV/CVD System

Growth of Ge Layer on Relaxed Ge-Rich SiGe by Ultrahigh Vacuum Chemical Vapor Deposition

A New Method of Fabricating Strained Silicon Materials

Strain Relaxation in Heteroepitaxial Si1-xGex Films via Surface Roughening Processes

Study of Strain in Partially Relaxed Ge Epilayers on Si(100) Substrate

Defect free strain relaxation of microcrystals on mesoporous patterned silicon

Thin Highly-Relaxed SiGe Induced by Ion Implantion into the Epitaxial Substrates

Study of Si and Ge growth on Si(100) surface

Single-Crystalline Si1-Xgex (X=0.5 Similar To 1) Thin Films On Si (001) With Low Threading Dislocation Density Prepared By Low Temperature Molecular Beam Epitaxy

Strain Relaxation In Sige Virtual Substrate Characterized By High Resolution X-Ray Diffraction

Optimization of Hetero-Epitaxial Growth for the Threading Dislocation Density Reduction of Germanium Epilayers