Abstract:Germanium on silicon has the potential to enable growth of high quality group IV semiconductors for the field of silicon photonics by being used as virtual buffers. In addition Ge layers can be used in the fabrication of passive components such as waveguides and resonators. A cost-effective technology for the heteroepitaxial growth of Ge on Si will be highly beneficial. In this work, a simplified chemical vapor deposition reactor was assembled in-house to deposit Ge films. Epitaxial Ge film growth on Si (100) substrates was accomplished without requiring ultra-high vacuum conditions or a high temperature substrate pre-deposition bake thereby minimizing the economic and thermal budget of the process. Films were deposited using digermane (Ge2H6) precursor in a single step at a process temperature of 350 °C and chamber pressures of 1–10 Torr. Films were achieved at high chamber background pressures (>10−6 Torr) by implementing a thorough ex situ substrate cleaning process and optimizing times for wafer loading, chamber pumping and initiation of film deposition. Transmission electron microscopy and X-ray diffraction were used to confirm the epitaxial growth and crystalline quality of the obtained films. Optical properties of the films were characterized using Raman spectroscopy, Photoluminescence and Infra-red spectroscopy.

Growth of Ultrathin Si1-xGex Films on Si Substrate for Fabricating SGOI

Epitaxial Growth of Fully Relaxed Si0.75Ge0.25 on SOI Substrate

Growth of Cubic MgxZn1-xO Films and Characterization

High-quality Ge film grown on Si substrate and its thermodynamic mechanism

Investigation of Strain-Relaxed SiGe Thin Film Grown on Ion-Implanted Si Compliant Substrate

High quality partially relaxed SiGe film grown on silicon-on-insulator substrate by ultra-high vacuum chemical vapor deposition

Fabrication of Strained Ge Film Using a Thin SiGe Virtual Substrate

Study of Si and Ge growth on Si(100) surface

Epitaxial Ge thin film Growth on Si Using a Cost-Effective Process in Simplified CVD Reactor

GaN growth on Si and Si-SiO2-Si compliant substrates

Single-Crystalline Si1-Xgex (X=0.5 Similar To 1) Thin Films On Si (001) With Low Threading Dislocation Density Prepared By Low Temperature Molecular Beam Epitaxy

Effect of a seed layer on microstructure and electrical properties of Ga2O3 films on variously oriented Si substrates

Epitaxial growth of high-quality Ge layers on Si with Ge2H6 under UHV-CVD conditions

High-Quality Ge Films on Si Substrates Using Sb Surfactant-Mediated Graded Sige Buffers

Growth of Ge Layer on Relaxed Ge-Rich SiGe by Ultrahigh Vacuum Chemical Vapor Deposition

Chemical vapor deposition of Ge films on Si1-xGex:C buffers

Epitaxial growth of low dislocation Ge thin films on Si (001) substrates using a Si-Ge intermediate layer

Heteroepitaxial Growth of Ge Films on Si Substrates by Molecular-Beam Epitaxy

Growth of Ge-Si strained layers and DC XRD study on epitaxial films

Cvd Growth of Ge Films on Graded Si1-Xgex: C Buffers

Step flow growth of β-Ga2O3 films on off-axis 4H-SiC substrates by LPCVD