Abstract:Epitaxial growth of Ge films on Si(100) substrates has been studied under ultra-high vacuum chemical vapor deposition (UHV-CVD) conditions by using digermane (Ge2H6) as the precursor. It was found out that high quality layers with thicknesses beyond 500 nm could be produced at complementary metal-oxide-semiconductor (CMOS) compatible conditions, demonstrating low defect density, sharp and narrow X-ray diffraction peaks, as well as room temperature photoluminescence around 1550 nm. The surface roughness values are comparable to prior reduced pressure chemical vapor deposition (RPCVD) results at similar growth temperatures. By employing higher growth temperatures, growth rates are significantly enhanced, resulting in much thicker layers beyond 2000 nm. Smoother sample surface could also be obtained, yielding a state-of-the-art surface root-mean-square (RMS) roughness value of 0.34 nm for the as-grown sample. At the same time, after being annealed at 750 °C for 20 minutes, the full width at half maximum (FWHM) of X-ray diffraction 004 rocking curve spectrum of the Ge layer is as low as 88 arcseconds, which stands the best among all Ge/Si samples. The current work has provided important reference for Ge/Si growth with Ge2H6 in low pressure regime and solidified material grounding for Ge-based optoelectronics and Si photonics.

High quality partially relaxed SiGe film grown on silicon-on-insulator substrate by ultra-high vacuum chemical vapor deposition

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Investigation of Strain-Relaxed SiGe Thin Film Grown on Ion-Implanted Si Compliant Substrate

Strain Relaxation in Graded SiGe Grown by Ultra-High Vacuum Chemical Vapor Deposition (UHVCVD)

Growth of Ge Layer on Relaxed Ge-Rich SiGe by Ultrahigh Vacuum Chemical Vapor Deposition

Fabrication of Strained Ge Film Using a Thin SiGe Virtual Substrate

A New Method of Fabricating Strained Silicon Materials

Thin Highly-Relaxed SiGe Induced by Ion Implantion into the Epitaxial Substrates

The growth and quality evaluation of strained Si material with multilayer structure

HV/CVD Grown Relaxed SiGe Buffer Layers for SiGe HMOSFETs

High-quality Ge film grown on Si substrate and its thermodynamic mechanism

Fabrication and Characterization of Strained Si Material Using SiGe Virtual Substrate for High Mobility Devices

Growth of Fully Relaxed Si0. 83Ge0. 17 Layer Free of Dislocations by UHV/CVD System

Effect of Strain Relief on the Si_(1-x-y) Ge_xC_y Alloys Grown by Ultra\|High Vacuum/Chemical Vapor Deposition\+*

Fabrication of Strained Silicon Using Reduced Pressure Chemical Vapor Deposition Process

Epitaxial growth of high-quality Ge layers on Si with Ge2H6 under UHV-CVD conditions

Strain study of partially relaxed Ge epilayers on Si (100) substrate

Study on the Strain in SiGeC Alloy Films Grown on Si Substrate by CVD

Growth of Ultrathin Si1-xGex Films on Si Substrate for Fabricating SGOI

Nano-structured Multi-Layer SiGe Alloy Grown by Ultra High Vacuum Chemical Vapor Deposition

Study of Strain in Partially Relaxed Ge Epilayers on Si(100) Substrate