Abstract:The step-by-step strain evolution in the channel during the SiGe nanosheet (NS) integration process flow for pFETs is demonstrated using finite element analysis (FEA). The effect of device dimensions and defective source/drain (S/D) is studied. After fin formation, the 0.77% compressive biaxial strain resulting from the lattice mismatch between Si0.8Ge0.2 and Si substrate is observed. However, the strain is gradually relaxed during the S/D recess and the inner spacer cavity formation. A large strain is obtained on the channel along the current direction after Si0.6Ge0.4 S/D regrowth, increasing from 0.21% to 1.50% for defect-free S/D epitaxy. The compressive strain along the channel remains similar for different shapes of the S/D regrowth, with small variations between every channel. Decreasing the NS width only leads to an insignificant increase in channel strain until the nanowire structure is formed. Nevertheless, the scaled body thickness can enhance the channel strainxx substantially with the 21.2% compressive strain increase from = 5 nm to = 1 nm. The defective S/D is also simulated with air gaps between the merged epitaxes, where compressive strain in the channel is totally relaxed and further turns into tensile-strained. The hole mobility is expected to have a enhancement with 1.5% compressive strain .

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