Abstract:The explosion of artificial intelligence, possible end of Moore's law, dawn of quantum computing and continued exponential growth of data communications traffic have brought new urgency to the need for laser integration on the diversified Si platform. While diode lasers on III-V platforms have long powered internet data communications and other optoelectronic technologies, direct integration with Si remains problematic. A paradigm-shifting solution requires exploring new and unconventional materials and integration approaches. In this work, we show that a sub-10-nm ultra-thin Si$_{1-x}$Ge$_x$ buffer layer fabricated by an oxidative solid-phase epitaxy process can facilitate extraordinarily efficient strain relaxation. The Si$_{1-x}$Ge$_x$ layer is formed by ion implanting Ge into Si(111) and selectively oxidizing Si atoms in the resulting ion-damaged layer, precipitating a fully strain-relaxed Ge-rich layer between the Si substrate and surface oxide. The efficient strain relaxation results from the high oxidation temperature, producing a periodic network of dislocations at the substrate interface, coinciding with modulations of the Ge content in the Si$_{1-x}$Ge$_x$ layer and indicating the presence of defect-mediated diffusion of Si through the layer. The epitaxial growth of high-quality GaAs is demonstrated on this ultra-thin Si$_{1-x}$Ge$_x$ layer, demonstrating a promising new pathway for integrating III-V lasers directly on the Si platform.

Thin Highly-Relaxed SiGe Induced by Ion Implantion into the Epitaxial Substrates

Thin strain-relaxed SiGe grown by ultrahigh vacuum chemical vapor deposition

Investigation of Strain-Relaxed SiGe Thin Film Grown on Ion-Implanted Si Compliant Substrate

A New Method of Fabricating Strained Silicon Materials

High quality partially relaxed SiGe film grown on silicon-on-insulator substrate by ultra-high vacuum chemical vapor deposition

Strain Relaxation in Graded SiGe Grown by Ultra-High Vacuum Chemical Vapor Deposition (UHVCVD)

Growth of Ge Layer on Relaxed Ge-Rich SiGe by Ultrahigh Vacuum Chemical Vapor Deposition

Fabrication of Strained Ge Film Using a Thin SiGe Virtual Substrate

A Dislocation-Driven Laminated Relaxation Process in Si1−xGex Grown on Si (001) by Molecular Beam Epitaxy

Fabrication and Characterization of Strained Si Material Using SiGe Virtual Substrate for High Mobility Devices

Fabrication of Strained Silicon Using Reduced Pressure Chemical Vapor Deposition Process

Strain study of partially relaxed Ge epilayers on Si (100) substrate

Growth of Fully Relaxed Si0. 83Ge0. 17 Layer Free of Dislocations by UHV/CVD System

Epitaxial Growth of Fully Relaxed Si0.75Ge0.25 on SOI Substrate

Strain Relaxation In Sige Virtual Substrate Characterized By High Resolution X-Ray Diffraction

HV/CVD Grown Relaxed SiGe Buffer Layers for SiGe HMOSFETs

Study of Strain in Partially Relaxed Ge Epilayers on Si(100) Substrate

Anti-relaxation of tensile lattice strain in Si-embedded Ge strip structure for photonic device applications

Strain Relaxation and Misfit Dislocation in SiGe Epilayers Grown in Micron Size Windows by MBE

The growth and quality evaluation of strained Si material with multilayer structure

Ultra-thin strain-relieving Si$_{1-x}$Ge$_x$ layers enabling III-V epitaxy on Si