Abstract:Heterogeneous integration of diverse materials structures is critical to the scaling of electronic and photonic integrated circuits. For a model system of Ge-on-Si, we experimentally examine the roles of lattice misfit and thermal expansion misfit in determining the residual strain in as-grown and annealed heteroepitaxial films. We present data for Ge-on-Si growth from 400 to 730 °C followed by heat treatment from 500–900 °C. We show that strain fluctuations of 5.02% enable misfit dislocation formation, and we propose a comprehensive model for the conversion of compressive misfit strain to tensile elastic strain. The model is expressed in terms of three regimes: (1) misfit control for the low temperature growth regime at 400 °C; (2) point defect control via annealing in the point defect recovery regime at 500–650 °C; and (3) thermal expansion control for growth or anneal at T > 650 °C in the dislocation recovery regime. Growth from 400 to 730 °C exhibits near complete misfit strain relief by misfit dislocations leaving a consistent residual compressive strain of 0.09%. Growth at 400 °C followed by post growth heat treatment at 600 °C results in vertical threading dislocation density reduction via a point defect-mediated climb mechanism that gives minimal strain relief. Anneal above 650 °C promotes strain relief by dislocation glide. Temperature excursions at T > 730 °C followed by cooling to room temperature yield plastic strain in the Ge film that cannot be further relieved by thermal expansion misfit accommodation. Growth at 400–730 °C retains a residual compressive strain that represents the nucleation threshold for misfit dislocations.

Strain Relaxation and Misfit Dislocation in SiGe Epilayers Grown in Micron Size Windows by MBE

A Dislocation-Driven Laminated Relaxation Process in Si1−xGex Grown on Si (001) by Molecular Beam Epitaxy

Strain study of partially relaxed Ge epilayers on Si (100) substrate

Evolution of Mosaic Structure in Si0.7ge0.3 Epilayers Grown on Si(001) Substrates

Study of Strain in Partially Relaxed Ge Epilayers on Si(100) Substrate

The Influence of the Edge Effect of the Mask on the Strain and the Morphology of SiGe Film Grown at the Patterned Si Substrate by Molecular Beam Epitaxy

Epitaxial growth of low dislocation Ge thin films on Si (001) substrates using a Si-Ge intermediate layer

Sige Quantum Dot Molecules Grown on Patterned Si (001) Substrates

Investigation of Strain-Relaxed SiGe Thin Film Grown on Ion-Implanted Si Compliant Substrate

Quantitative Strain Characterization of SiGe Heterostructures by High-Resolution Transmission Electron Microscopy

Effect of Stresses on Defect Nucleation in Si<sub>1−.x</sub>Ge<sub>x</sub>/Si Heteroepitaxial Systems

Origin of residual strain in heteroepitaxial films

Epitaxial Growth of Fully Relaxed Si0.75Ge0.25 on SOI Substrate

Ge Migration Effect of Si/Ge-N/Si(100) Heterostructure Films Probed by Grazing Incidence Fluorescence X-Ray Absorption Fine Structure

Strain Relaxation in Heteroepitaxial Si1-xGex Films via Surface Roughening Processes

Strain Relaxation In Sige Virtual Substrate Characterized By High Resolution X-Ray Diffraction

Strain Relaxation in Heteroepitaxial Si<sub>1-x</sub>Ge<sub>x</sub> Films via Surface Roughening Processes

Bunches of misfit dislocations on the onset of relaxation of Si$_{0.4}$Ge$_{0.6}$/Si(001) epitaxial films revealed by high-resolution x-ray diffraction

Strain relaxation of GaAs/Ge crystals on patterned Si substrates

500-period epitaxial Ge/Si0.18Ge0.82 multi-quantum wells on silicon

Effect of Stresses on Defect Nucleation in Si1-xGex/Si Heteroepitaxial Systems