Abstract:The hetero-epitaxial strain relaxation in nano-scale systems plays a fundamental role in shaping their properties. Here, the elastic and plastic relaxation of self-assembled SiGe islands grown by surface-thermal-diffusion from a local Ge solid source on Si(100) are studied by atomic force and transmission electron microscopies, enabling the simultaneous investigation of the strain relaxation in different dynamical regimes. Islands grown by this technique remain dislocation-free and preserve a structural coherence with the substrate for a base width as large as 350 nm. The results indicate that a delay of the plastic relaxation is promoted by an enhanced Si-Ge intermixing, induced by the surface-thermal-diffusion, which takes place already in the SiGe overlayer before the formation of a critical nucleus. The local entropy of mixing dominates, leading the system toward a thermodynamic equilibrium, where non-dislocated, shallow islands with a low residual stress are energetically stable. These findings elucidate the role of the interface dynamics in modulating the lattice distortion at the nano-scale, and highlight the potential use of our growth strategy to create composition and strain-controlled nano-structures for new-generation devices.

Strain Relaxation In Sige Virtual Substrate Characterized By High Resolution X-Ray Diffraction

A Dislocation-Driven Laminated Relaxation Process in Si1−xGex Grown on Si (001) by Molecular Beam Epitaxy

Strain study of partially relaxed Ge epilayers on Si (100) substrate

Investigation of Strain-Relaxed SiGe Thin Film Grown on Ion-Implanted Si Compliant Substrate

Strain Relaxation and Misfit Dislocation in SiGe Epilayers Grown in Micron Size Windows by MBE

Quantitative Strain Characterization of SiGe Heterostructures by High-Resolution Transmission Electron Microscopy

Strain Relaxation in Graded SiGe Grown by Ultra-High Vacuum Chemical Vapor Deposition (UHVCVD)

A New Method of Fabricating Strained Silicon Materials

Study of Strain in Partially Relaxed Ge Epilayers on Si(100) Substrate

Silicon Doping Effect on the Crystallization Behavior of Ge2Sb2Te5 Film

Strain Relaxation Mechanisms and Local Structural Changes in Si_{1-x}$Ge_{x} Alloys

Fabrication and Characterization of Strained Si Material Using SiGe Virtual Substrate for High Mobility Devices

Investigation of strain and thin film relaxation in Ge xSi 1-x/Si strained-layer superlattice by dark-field electron holography

Strains in Si Substrate Induced by Formation of Ge Islands

Epitaxial Growth of Fully Relaxed Si0.75Ge0.25 on SOI Substrate

Thin Highly-Relaxed SiGe Induced by Ion Implantion into the Epitaxial Substrates

Delayed plastic relaxation limit in SiGe islands grown by Ge diffusion from a local source

Investigation of Strain and Thin Film Relaxation in GexSi1−x/Si Strained-Layer Superlattice by Dark-Field Electron Holography

Different Strain Relaxation Mechanisms in Strained Si/Si1−xGex/Si Heterostructures by High Dose B+ and BF2+ Doping

Strain relaxation of GaAs/Ge crystals on patterned Si substrates

Fabrication of High Quality SiGe Virtual Substrates by Combining Misfit Strain and Point Defect Techniques