Abstract:AbstractStrained layer semiconductor structures provide possibilites for novel electronic devices. When a semiconductor layer is deposited epitaxially onto a single crystal substrate with the same structure but a slightly different lattice parameter, the semiconductor layer grows pseudomorphically with a misfit strain that can be accomodated elastically below a critical thickness. When the critical thickness is exceeded, the elastic strain energy builds up to a point where it becomes energetically favorable to form misfit dislocations. In the absence of a capping layer, surface roughening may also take place which causes strain relaxation in the form of 2D ridges or islands via surface diffusion. At sharp valley regions on the surface, amplified local stresses can cause further defect nucleation and propagation. These defects can be detrimental to the electrical performance of devices by acting as electron-hole recombination centers or current leakage channels. In this paper, we present observations and analyses of two novel defects nucleated in heteroepitaxial Si1−xGex thin films through surface roughening. Heteroepitaxial films 500 Å thick and containing 22% Ge are deposited by LPCVD. These initially flat films are subjected to various annealing conditions in a H2 atmosphere to induce morphological evolution and defect formation. High resolution transmission electron microscopy and atomic force microscopy have been used to study the morphology of defects at the film surface and at the film/substrate interface.

Fabrication of High Quality SiGe Virtual Substrates by Combining Misfit Strain and Point Defect Techniques

Fabrication and Characterization of Strained Si Material Using SiGe Virtual Substrate for High Mobility Devices

Fabrication of Strained Ge Film Using a Thin SiGe Virtual Substrate

A New Method of Fabricating Strained Silicon Materials

Fabrication of Strained Silicon Using Reduced Pressure Chemical Vapor Deposition Process

The growth and quality evaluation of strained Si material with multilayer structure

Epitaxial growth of low dislocation Ge thin films on Si (001) substrates using a Si-Ge intermediate layer

Defect free strain relaxation of microcrystals on mesoporous patterned silicon

High-quality germanium growth on (111)-faceted V-groove silicon by molecular beam epitaxy

Quantitative Strain Characterization of SiGe Heterostructures by High-Resolution Transmission Electron Microscopy

Strain Relaxation In Sige Virtual Substrate Characterized By High Resolution X-Ray Diffraction

Ge-Dot/Si Multilayered Structures Through Ni-Induced Lateral Crystallization

500-period epitaxial Ge/Si0.18Ge0.82 multi-quantum wells on silicon

Fabrication of High-Quality and Strain-Relaxed GeSn Microdisks by Integrating Selective Epitaxial Growth and Selective Wet Etching Methods

A Dislocation-Driven Laminated Relaxation Process in Si1−xGex Grown on Si (001) by Molecular Beam Epitaxy

Structural Mapping of Functional Ge Layers Grown on Graded SiGe Buffers for sub-10 nm CMOS Applications Using Advanced X-ray Nanodiffraction

Strain Relaxation and Misfit Dislocation in SiGe Epilayers Grown in Micron Size Windows by MBE

Design, fabrication and operation of sub-65nm straeved-si/si 1-xGEx mosfets

Effect of Stresses on Defect Nucleation in Si<sub>1−.x</sub>Ge<sub>x</sub>/Si Heteroepitaxial Systems

Tensilely Strained Ge Films on Si Substrates Created by Physical Vapor Deposition of Solid Sources

Different Strain Relaxation Mechanisms in Strained Si/Si1−xGex/Si Heterostructures by High Dose B+ and BF2+ Doping