Abstract:Strained silicon (ε-Si) is a promising material that could extend Moore’s law by enhancing electron mobility. A ε-Si material is usually composed of multiscale, multilayer heterostructures, where the strained-silicon film or strap is tens-of-nanometers thick, and its buffer layers are of the micrometer scale. The structural properties determine the electrical performance and reliability of ε-Si-based devices. Inhomogeneous residual stress is induced during the preparation, which induces ε-Si structure failure. In this work, biaxial strained-silicon films that contain graded and relaxed germanium-silicon buffer layers were prepared on monocrystalline silicon wafers through reduced-pressure chemical-vapor epitaxy. The layer components and thicknesses were measured using energy-dispersive spectroscopy and scanning-electron microscopy. Crystal and lattice characters were observed by using high-resolution transmission-electron microscopy and micro-Raman spectroscopy. The residual stress distribution along cross-sections of the ε-Si multilayer structures was examined by using micro-Raman mapping. The experimental results showed that, with a gradual increase in germanium concentration, the increasing residual stress was suppressed owing to dislocation networks and dislocation loops inside the buffer layers, which favored the practical application.

A New Method of Fabricating Strained Silicon Materials

Fabrication and Characterization of Strained Si Material Using SiGe Virtual Substrate for High Mobility Devices

Fabrication of Strained Silicon Using Reduced Pressure Chemical Vapor Deposition Process

Fabrication of Strained Ge Film Using a Thin SiGe Virtual Substrate

Thin Highly-Relaxed SiGe Induced by Ion Implantion into the Epitaxial Substrates

The growth and quality evaluation of strained Si material with multilayer structure

High quality partially relaxed SiGe film grown on silicon-on-insulator substrate by ultra-high vacuum chemical vapor deposition

Strain study of partially relaxed Ge epilayers on Si (100) substrate

Investigation of Strain-Relaxed SiGe Thin Film Grown on Ion-Implanted Si Compliant Substrate

Fabrication of High Quality SiGe Virtual Substrates by Combining Misfit Strain and Point Defect Techniques

Study of Strain in Partially Relaxed Ge Epilayers on Si(100) Substrate

Epitaxial Growth of Fully Relaxed Si0.75Ge0.25 on SOI Substrate

Strain Relaxation In Sige Virtual Substrate Characterized By High Resolution X-Ray Diffraction

HV/CVD Grown Relaxed SiGe Buffer Layers for SiGe HMOSFETs

Growth of Ge Layer on Relaxed Ge-Rich SiGe by Ultrahigh Vacuum Chemical Vapor Deposition

Elastically Relaxed Free-standing Strained-Si Nanomembranes

Strain Relaxation in Graded SiGe Grown by Ultra-High Vacuum Chemical Vapor Deposition (UHVCVD)

Tensilely Strained Ge Films on Si Substrates Created by Physical Vapor Deposition of Solid Sources

Strain, stress, and mechanical relaxation in fin-patterned Si/SiGe multilayers for sub-7 nm nanosheet gate-all-around device technology

Anti-relaxation of tensile lattice strain in Si-embedded Ge strip structure for photonic device applications

Experimental Analyses on Multiscale Structural and Mechanical Properties of Ε-Si/gesi/c-si Materials