Abstract:Epitaxial growth of Ge films on Si(100) substrates has been studied under ultra-high vacuum chemical vapor deposition (UHV-CVD) conditions by using digermane (Ge2H6) as the precursor. It was found out that high quality layers with thicknesses beyond 500 nm could be produced at complementary metal-oxide-semiconductor (CMOS) compatible conditions, demonstrating low defect density, sharp and narrow X-ray diffraction peaks, as well as room temperature photoluminescence around 1550 nm. The surface roughness values are comparable to prior reduced pressure chemical vapor deposition (RPCVD) results at similar growth temperatures. By employing higher growth temperatures, growth rates are significantly enhanced, resulting in much thicker layers beyond 2000 nm. Smoother sample surface could also be obtained, yielding a state-of-the-art surface root-mean-square (RMS) roughness value of 0.34 nm for the as-grown sample. At the same time, after being annealed at 750 °C for 20 minutes, the full width at half maximum (FWHM) of X-ray diffraction 004 rocking curve spectrum of the Ge layer is as low as 88 arcseconds, which stands the best among all Ge/Si samples. The current work has provided important reference for Ge/Si growth with Ge2H6 in low pressure regime and solidified material grounding for Ge-based optoelectronics and Si photonics.

Growth of Ge Layer on Relaxed Ge-Rich SiGe by Ultrahigh Vacuum Chemical Vapor Deposition

Ultrathin Low Temperature Si0.75Ge0.25/Si Buffer Layer for the Growth of High Quality Ge Epilayer on Si (100) by RPCVD

Ultrathin Low Temperature Sige Buffer For The Growth Of High Quality Ge Epilayer On Si(100) By Ultrahigh Vacuum Chemical Vapor Deposition

Growth of Ge on Silicon by Ultrahigh Vacuum Chemical Vapor Deposition

Growth of Thick Ge Epitaxial Layers with Low Dislocation Density on Silicon Substrate by UHV/CVD

Promoting Strain Relaxation of Si0.72ge0.28 Film on Si (100) Substrate by Inserting A Low-Temperature Ge Islands Layer in Uhvcvd

High quality Ge epilayer on Si (1 0 0) with an ultrathin Si1−x Ge x /Si buffer layer by RPCVD

Growth of Fully Relaxed Si0. 83Ge0. 17 Layer Free of Dislocations by UHV/CVD System

Fabrication of Strained Ge Film Using a Thin SiGe Virtual Substrate

High quality Ge epilayer on Si (100) with an ultrathin Si1-xGex/Si buffer layer by RPCVD

Epitaxial growth of high-quality Ge layers on Si with Ge2H6 under UHV-CVD conditions

High-quality Strain-Relaxed Si0.72Ge0.28 Layers Grown by MBE-UHV/CVD Combined Deposition Chamber

High Quality Ge Epilayer on Si (1 0 0) with an Ultrathin Si1−xGex/Si Buffer Layer by RPCVD

Thin strain-relaxed SiGe grown by ultrahigh vacuum chemical vapor deposition

Sige Epitaxy with Graded Buffer by Ultrahigh Vacuum Chemical Vapor Deposition

Epitaxial growth of thick Ge layers with low dislocation density on silicon substrate by UHV/CVD

Strain Relaxation in Graded SiGe Grown by Ultra-High Vacuum Chemical Vapor Deposition (UHVCVD)

Growth of Ge-Si strained layers and DC XRD study on epitaxial films

HV/CVD Grown Relaxed SiGe Buffer Layers for SiGe HMOSFETs

Thin Relaxed SiGe Layer Grown on Ar^＋ Ion Implanted Si Substrate by Ultra-High Vacuum Chemical Vapor Deposition

Reduced Perssure-Chemical Vapor Deposition of High Quality Ge Layers on SiGe/Si Superlayers for Microelectronics and Optoelectronics Purposes