Study on Ge content of intermediate layer in growing relaxed Ge films on Si

Yourui Huangfu,Hui Ye

DOI: https://doi.org/10.1109/GROUP4.2010.5643401

2010-01-01

Abstract:The growth of relaxed Ge films was carried out in MBE equipment. We focused on the influence of Ge content of intermediate layer between LT and HT Ge films and achieved Ge film with threading dislocation density of 5×105 cm-2 and surface roughness of 1.5nm.

What problem does this paper attempt to address?

Growth of Ge Layer on Relaxed Ge-Rich SiGe by Ultrahigh Vacuum Chemical Vapor Deposition

Liu Jialei,Liang Renrong,Wang Jing,Xu Yang,Xu Jun,Liu Zhihong

DOI: https://doi.org/10.1016/s1007-0214(07)70184-0

2007-01-01

Abstract:The paper describes the growth of a germanium （Ge） film on a thin relaxed Ge-rich SiGe buffer. The thin Ge-rich SiGe buffer layer was achieved through a combination of ultrahigh vacuum chemical vapor deposition （UHVCVD） SiGe epitaxial growth and SiGe oxidation. A lower Ge content strained SiGe layer was first grown on the Si （001） substrate and then the Ge mole fraction was increased by oxidation. After removal of the surface oxide, a higher Ge content SiGe layer was grown and oxidized again. The Ge mole fraction was increased to 0.8 in the 50 nm thick SiGe layer. Finally a 150 nm thick pure Ge film was grown on the SiGe buffer layer using the UHVCVD system. This technique produces a much thinner buffer than the conventional compositionally graded relaxed SiGe method with the same order of magnitude threading dis- location density.
Study of Si and Ge growth on Si(100) surface

Lei Wang,JingChang Tang,Deren Yang,Xuesen Wang,Yanfang Hu

2002-01-01

Abstract:Utilizing scanning tunneling microscope and UHV system, the growth of Si and Ge on Si(100) surface have been investigated. The morphological and structural properties of the surfaces are studies. A nano-patterned Si film can be produced by homoepitaxy on Si(100). The growth of Ge on Si(100) will form regular 3D islands. On the multilayer film of Si/Ge/Si(100), the Ge will form regular small and big is lands. The big islands are probably stabilized by a Ge/Si/Ge shell structure.
Epitaxial growth of low dislocation Ge thin films on Si (001) substrates using a Si-Ge intermediate layer

叶辉 hui ye,余金中 jinzhong yu,刘旭 xu liu,皇甫幼睿 yourui huangfu,张磊 lei zhang

DOI: https://doi.org/10.3788/COL201008S1.0091

IF: 2.56

2010-01-01

Chinese Optics Letters

Abstract:Pure Ge is grown on Si substrate to control the release of the strain in the heterostructure, which is due to the 4.2% lattice misfit between Ge and Si. In this letter, an innovative approach of multi-buffer layers is proposed for the epitaxial growth of high quality Ge thin films on Si (001) substrates in a molecular beam epitaxy system. The multi-buffer layers, including the low temperature Ge seed layer and the Si-Ge alloy intermediate layer fabricated under different temperatures, serve as defect gathering and annihilating sites to reduce the dislocation density in the top layers. The result reveals that the total thickness of the whole structure is less than 400 nm, with a low threading dislocation density of less than 5×105 cm-2 in the top layer and a root mean square surface roughness of 1.5 nm. © 2010 Chinese Optics Letters.
Growth of Fully Relaxed Si0. 83Ge0. 17 Layer Free of Dislocations by UHV/CVD System

Guang-li LUO,Xiao-feng LIN,Zhi-nong LIU,Pei-yi CHEN,Hui-wang LIN,Pei Tsien,An-sheng LIU

DOI: https://doi.org/10.3969/j.issn.1674-4926.2000.07.011

2000-01-01

Abstract:The fully relaxed Si0.83Ge0.17 epitaxial layer with Ge composition grade buffer layer is grown at 600°C by the cold-wall ultrahigh vacuum chemical vapor deposition system (UHV/CVD). The transmission electron microscopy (TEM) image shows that the Si0.83Ge0.17 epitaxial layer is free of dislocations, and the Si cap layer on it is in tensile strain. Additionally, it is found that the temperature can affect the results of the growth greatly. The higher temperature can increase the growth rate and accelerate the relaxation velocity of the Ge composition grade layers. This is of advantage to the growth of thick Ge composition grade layers.
Investigation of Strain-Relaxed SiGe Thin Film Grown on Ion-Implanted Si Compliant Substrate

CC Chen,BH Yu,JF Liu,JQ Cao,DZ Zhu,ZH Liu

DOI: https://doi.org/10.1016/j.nimb.2005.04.119

2005-01-01

Abstract:Si1−xGex thin films on the Ar+ ion-implanted Si substrates with different implantation energy (30keV, 40keV and 60keV) at the same implantation fluence (3×1015cm−2) were grown by ultra high vacuum chemical vapor deposition (UHVCVD). Various characterization technologies were used to characterize these Si1−xGex films. Investigations by Rutherford backscattering spectroscopy/channeling (RBS/C) demonstrate that thin Si0.81Ge0.19 films could be epitaxially grown on the ion-implanted Si substrates, although there existed obvious crystal defects. These relaxation extents of Si0.81Ge0.19 films on the Ar+ implanted Si substrates are larger than that in the un-implanted case, which were determined by Raman spectra. Atomic force microscopy was used to determine the surface morphology of Si0.81Ge0.19 films. The microstructures of these SiGe/Si hetero-epitaxial materials were investigated by transmission electron microscopy (TEM). All the experimental results demonstrated that a highly relaxed (relaxation extent of 82.3%) Si0.81Ge0.19 thin film (50nm) growing on the 30keV Ar+ ion-implanted Si substrate is optimal, which is compared to those SiGe films grown on the ion-implanted Si substrate under other implantation condition.
Epitaxial Growth of Fully Relaxed Si0.75Ge0.25 on SOI Substrate

Zhongying Xue,Xing Wei,Bo Zhang,Aimin Wu,Miao Zhang,Xi Wang

DOI: https://doi.org/10.1016/j.apsusc.2011.01.014

IF: 6.7

2011-01-01

Applied Surface Science

Abstract:A fully relaxed Si0.75Ge0.25 film with low dislocation densities is fabricated by epitaxial growth on SOI substrate without depositing graded buffers. The relaxation mechanism of the SiGe layer directly grown on SOI substrate is also analyzed. For SiGe grown on SOI with low Ge content, the strain is redistributed between SiGe and the top Si of SOI substrate, and the strain residing in SiGe layer can be fully relaxed by the formation and expansion of dislocation half-loops near the SiGe/Si interface. The surface morphology and crystal quality of all samples are analyzed by optical microscopy and transmission electron microscopy (TEM), respectively. Compared to the Si0.75Ge0.25 layer epitaxially grown on graded buffer, the Si0.75Ge0.25 directly grown on SOI substrate appears good surface morphology and perfect crystal quality. (C) 2011 Elsevier B.V. All rights reserved.
Strain study of partially relaxed Ge epilayers on Si (100) substrate

Chengwen Pei,Jie Qin,Xiaohan Liu,DongZhi Hu,Xiangjiu Zhang,Daming Huang,Zuimin Jiang,Quanjie Jia,Wenli Zheng,Zhouguang Wang,Jun Wang,Xiaoming Jiang

1999-01-01

Abstract:Ge epilayers of different thicknesses are grown by molecular beam epitaxy with Sb as a surfactant on Si (100) substrate. X-ray diffractions illustrate that these Ge thin films are partially strained, and strain decreases gradually with increasing thickness. Raman spectra reveal a peak downward shift of Ge-Ge mode with increasing thickness of epilayers. In region of high strain, the relationship between Raman shift of this mode and the strain in the partially relaxed samples is great different from the linear relationship reported before, the possible reasons are discussed.
High quality partially relaxed SiGe film grown on silicon-on-insulator substrate by ultra-high vacuum chemical vapor deposition

Changchun Chen,Wentao Huang,Zhihong Liu,Juin Wang,Xiaoyi Xiong,Yilin Shan,Wei Zhang,Jun Zhu,Peihsin Hsin Tsien

IF: 3.451

2004-01-01

Metals and Materials International

Abstract:Strain-relaxed SiGe film is grown on a silicon-on-insulator (SOI) substrate by an ultrahigh vacuum chemical vapor deposition system (UHVCVD). Rutherford backscattering spectroscopy together with channeling demonstrates that the SiGe film grown on the SOI substrate is of high crystalline quality without significant dislocations. Cross-sectional TEM images of the Si/SiGe/SOI sample also indicate that there are no dislocations within the SiGe layer. The status of strain in both the Si cap layer and its underlying SiGe layer are evaluated by high-resolution x-ray diffraction (HRXRD) and Raman spectroscopy, respectively. 0.36% of tensile strain in the Si cap layer is exhibited in the HRXRD rocking curve. Raman spectroscopy measurements show that the relaxation degree of strain in the SiGe film grown on the SOI substrate is 24%.
HV/CVD Grown Relaxed SiGe Buffer Layers for SiGe HMOSFETs

黄文韬,罗广礼,史进,邓宁,陈培毅,钱佩信

2003-01-01

Abstract:High-vacuum/chemical-vapor deposition (HV/CVD) system was used to grow relaxed SiGe buffer layers on Si substrates. Several methods were then used to analyze the quality of the SiGe films. X-ray diffraction and Raman spectroscopy showed that the upper layer was almost fully relaxed. Second ion mass spectroscopy showed that the Ge compositions were step-graded. Transmission electron microscopy showed that the misfit dislocations were restrained to the graded SiGe layers. Tests of the electrical properties of tensile-strained Si on relaxed SiGe buffer layers showed that their transconductances were higher than that of Si devices. These results verify the high quality of the relaxed SiGe buffer layer. The calculated critical layer thicknesses of the graded Si1-xGex layer on Si substrate and a Si layer on the relaxed SiGe buffer layer agree well with experimental results.
High-quality Ge film grown on Si substrate and its thermodynamic mechanism

Penghao Liu,Kefeng Wu,Shen Xiahou,Yuhui Yang,Sheng Chen,Renfang Lei,Pei Guo,Wenliang Wang,Guoqiang Li

DOI: https://doi.org/10.1016/j.vacuum.2021.110068

IF: 4

2021-04-01

Vacuum

Abstract:By right of the prominent properties, Ge film grown on Si substrate plays an important role in the field of optoelectronic devices. However, the dislocation density of Ge film grown on Si substrate is still high due to the relatively large lattice mismatch between Ge and Si of ∼4.18% that hinders the further development of devices. In this work, high-quality Ge film grown on Si substrate has been obtained based on study of the thermodynamic mechanism. On the one hand, the thermodynamic mechanism of Ge film on Si substrate by First-principle calculation based on density functional theory; and then high-quality Ge films were achieved on Si substrate by the low temperature and high temperature two-step growth technique by molecular beam epitaxy accordingly. The as-grown 2.0 μm-thick Ge film show high quality with a full-width at half-maximums for Ge(004) of 110 arcsec and very smooth surface with a root-mean-square roughness of 0.2 nm. The Ge film achieved in this work is a promising candidate for the fabrication of optoelectronic devices.

materials science, multidisciplinary,physics, applied
The growth and quality evaluation of strained Si material with multilayer structure

Renrong LIANG,Jing WANG,Yang XU,Jun XU,Zhijian LI

DOI: https://doi.org/10.3321/j.issn:1005-3093.2007.01.012

2007-01-01

Abstract:The strained Si material has been fabricated on a relaxed Si_(0.7)Ge_(0.3)/graded Si_(1-x)Ge_x/Si substrate multilayer structure using a reduced pressure chemical vapor deposition (RPCVD) process.In the graded Si_(1-x)Ge_x layer,the mole fraction of Ge increases linearly from 0 to 0.2.The multilayer structure has been evaluated using various analysis techniques.The results showed that the root mean square (rms) of strained Si surface roughness is 4.12 nm,the strain in the strained Si cap layer is about 1.2%,and the threading dislocation density is about 4×10~4cm~(-2).Further rapid thermal annealing (RTA) experiment demonstrated that the strain state and surface morphology of the strained cap Si layer are almost unchanged even suffered from the high thermal budget.It will be particularly useful for the fabrication of strained Si devices.
Fabrication of Strained Ge Film Using a Thin SiGe Virtual Substrate

Guo Lei,Zhao Shuo,Wang Jing,Liu Zhihong,Xu Jun

DOI: https://doi.org/10.1088/1674-4926/30/9/093005

2009-01-01

Abstract:This paper describes a method using both reduced pressure chemical vapor deposition (RPCVD) and ultrahigh vacuum chemical vapor deposition (UHVCVD) to grow a thin compressively strained Ge film As the first step, low temperature RPCVD was used to grow a fully relaxed SiGe virtual substrate layer at 500 degrees C with a thickness of 135 nm, surface roughness of 0.3 nm, and Ge content of 77%. Then, low temperature UHVCVD was used to grow a high quality strained pure Ge film on the SiGe virtual substrate at 300 degrees C with a thickness of 9 nm, surface roughness of 0.4 nm, and threading dislocation density of similar to 10(5) cm(-2). Finally, a very thin strained Si layer of 1.5-2 nm thickness was grown on the Ge layer at 550 degrees C for the purpose of passivation and protection. The whole epitaxial layer thickness is less than 150 nm. Due to the low growth temperature, the two-dimensional layer-by-layer growth mode dominates during the epitaxial process, which is a key factor for the growth of high quality strained Ge films
Strain Relaxation and Misfit Dislocation in SiGe Epilayers Grown in Micron Size Windows by MBE

H Xiong,XJ Zhang,ZM Jiang,JH Hu,B Shi,XF Zhou,WR Jiang,DZ Hu,YL Fan

DOI: https://doi.org/10.1016/s0022-0248(01)01521-4

IF: 1.8

2001-01-01

Journal of Crystal Growth

Abstract:Strain relaxation and misfit dislocation density in Si0.8Ge0.2 epilayers grown in micron size windows by MBE are studied. Reduction of misfit dislocation density and increment of strain relaxation in Si0.8Ge0.2/Si heterostructure grown by MBE in the windows smaller than 20×20μm2 were clearly observed. Besides, experiments showed that dislocation density in SiGe films would be different due to the different stress in the mask materials while the window size and the composition x of the SixGe1−x films were the same. Qualitative explanations for these experimental results are discussed.
Growth of Ge-Si strained layers and DC XRD study on epitaxial films

HuanMing Lu,Zhizhen Ye,Jingyun Huang,Lei Wang,Binghui Zhao,HaoXiang Zhang

1999-01-01

Abstract:Ge-Si strained layers were grown on a 3 inch Si wafer by ultrahigh vacuum with chemical vapor deposition. Boron was doped in situ into the epitaxial layers. Ge-Si strained layers were characterized by double crystal X-ray diffraction, secondary ion mass spectroscopy and spreading resistance. The Ge content in the epitaxial layers is homogeneous. An increase of Ge content reduces the growth rate of epitaxial layer, while boron doped epitaxial layer has higher growth rate. A buffer layer with slow varying Ge content may considerably improve the quality of epitaxial layer.
Strain Relaxation in Heteroepitaxial Si1-xGex Films via Surface Roughening Processes

Cengiz S. Ozkan,William D. Nix,Huajian Gao

DOI: https://doi.org/10.1557/proc-399-407

1995-01-01

MRS Proceedings

Abstract:Surface roughening associated with strain relaxation of Si1-xGex films grown epitaxially on (100) Si substrates has been investigated using transmission electron microscopy, atomic force microscopy and x-ray diffraction. Epitaxial films 100 Å in thickness and containing 18% Ge, which are subcritical with respect to the formation of misfit dislocations, show strain relaxation through surface roughening on annealing at 700 °C. Enhanced surface grooves aligned along <100> directions are observed in films annealed at 850 °C. Strain relaxation as measured by x-ray diffraction is significantly greater at the higher temperature. Prolonged anneals at 850 °C also result in islanding. The surface roughening processes have also been studied in subcritical films with 15% Ge at 900 °C. These films also show enhanced grooving aligned along <100> directions. These observations are consistent with an anisotropic elastic analysis which indicates that grooving should occur preferentially along <100> directions. Intermixing effects in these samples have also been investigated through depth profiling using Auger Electron Spectroscopy. In addition to the above subcritical films, other films with 18% and 22% Ge and supercritical thicknesses have also been studied. For these films, surface grooving is observed along <110> directions, which suggests that these grooves are related to the formation of misfit dislocation networks. The role of these surface roughening processes in the nucleation of dislocations has also been explored.
Strain Relaxation in Graded SiGe Grown by Ultra-High Vacuum Chemical Vapor Deposition (UHVCVD)

HZ Wu,JY Huang,ZZ Ye,XB Jiang,X Shou,DL Que

DOI: https://doi.org/10.1016/s0022-0248(98)00026-8

IF: 1.8

1998-01-01

Journal of Crystal Growth

Abstract:We have used ultra-high vacuum chemical vapor deposition (UHVCVD) system to grow step-graded SiGe/Si structures with relatively high growth temperature (780°C). By using the phenomenon of Ge segregation to the growing surface during epitaxial growth we realized almost a linear Ge content variation in the buffer layer. X-ray diffraction and Raman spectroscopy measurements show that the upper layer is totally relaxed and the relaxation ratio is equal to 1. However, the measured results show that the density of dislocation in the compositionally graded structure is much lower than that in single-step buffer structures.
Surface Mobility Difference Between Si and Ge and Its Effect on Growth of SiGe Alloy Films and Islands.

L Huang,F Liu,GH Lu,XG Gong

DOI: https://doi.org/10.1103/physrevlett.96.016103

IF: 8.6

2006-01-01

Physical Review Letters

Abstract:Based on first-principles calculations of surface diffusion barriers, we show that on a compressive Ge(001) surface the diffusivity of Ge is 10(2)-10(3) times higher than that of Si in the temperature range of 300 to 900 K, while on a tensile surface, the two diffusivities are comparable. Consequently, the growth of a compressive SiGe film is rather different from that of a tensile film. The diffusion disparity between Si and Ge is also greatly enhanced on the strained Ge islands compared to that on the Ge wetting layer on Si(001), explaining the experimental observation of Si enrichment in the wetting layer relative to that in the islands.
Critical thickness for plastic relaxation of SiGe on Si(001) revisited

J. M. Hartmann,A. Abbadie,S. Favier

DOI: https://doi.org/10.1063/1.3656989

IF: 2.877

2011-10-15

Journal of Applied Physics

Abstract:We have revisited the critical thickness for plastic relaxation hc of SiGe on Si(001). To that end, we have started from prime 200-mm Si(001) wafers and grown (at 20 Torr with SiH2Cl2 and GeH4) various thickness and Ge content SiGe layers in an Epi Centura reduced-pressure–chemical-vapor-deposition chamber. Growth temperature was reduced from 700 °C to 550 °C, as the Ge content increased from 12% to 52%, to minimize surface roughening. X-ray diffraction (XRD) was performed on all samples to determine hc for the various Ge contents probed. Fully strained layers were characterized by: (i) peaks at a constant incidence angle that became narrower and more intense as the thickness increased, and (ii) the presence of numerous thickness fringes on each side of the layers’ peaks. Meanwhile, broader, less intense peaks (without thickness fringes) closer to the Si substrate peak were associated with plastically relaxed SiGe layers. Plastic strain relaxation was more gradual and less complete in higher Ge content layers grown at lower temperatures. We then performed haze and atomic force microscopy (AFM) measurements to have wafer and local scale quantifications of the surface roughening, which occurs when exceeding hc. For 12%, 22%, and 32% Ge, the haze and the surface roughness drastically increased for thicknesses greater than hc. For 42% Ge, the haze and the surface roughness were low for layers that had barely begun to relax, and became much larger for layers that were more plastically relaxed. Finally, for 52% Ge, there was a continuous but less pronounced increase of the haze and surface roughness when getting close to or exceeding hc. The critical thickness for plastic relaxation inferred from XRD was, for Ge content 22% and above, approximately two times higher than predicted by the People and Bean theory [Appl. Phys. Lett. 49, 229 (1986)]. However, some of the thickest SiGe 32%–52%, layers, considered fully strained in XRD, were observed by AFM to have a few “plow” lines, which are the surface signatures of misfit dislocations.

physics, applied
Study of Strain in Partially Relaxed Ge Epilayers on Si(100) Substrate

ZM Jiang,CW Pei,XF Zhou,WR Jiang,B Shi,XH Liu,X Wang,QJ Jia,WL Zheng,XM Jiang

DOI: https://doi.org/10.1063/1.124378

IF: 4

1999-01-01

Applied Physics Letters

Abstract:Ge epilayers of different thicknesses are grown by molecular-beam epitaxy with Sb as a surfactant on Si(100) substrates. X-ray diffraction illustrates that these Ge thin films are partially strained, and the strains decrease gradually with increasing epilayer thickness. Raman spectra reveal a downward shift of the Ge–Ge mode peak as the epilayer thickness increases. In the regions of high strain, the relationship between the Raman shift of this mode and the strain in the partially relaxed samples is considerably different from the linear relationship reported before, which is mainly attributed to the spatial confinement effect of phonons in a nanocrystal.
Strain Relaxation in Heteroepitaxial Si1-xGex Films via Surface Roughening Processes

Ozkan Cengiz S.,Nix William D.,Gao Huajian

DOI: https://doi.org/10.1557/PROC-399-407

1995-01-01

Abstract:Surface roughening associated with strain relaxation of Si1-xGex films grown epitaxially on (100) Si substrates has been investigated using transmission electron microscopy, atomic force microscopy and x-ray diffraction. Epitaxial films 100 Å in thickness and containing 18% Ge, which are subcritical with respect to the formation of misfit dislocations, show strain relaxation through surface roughening on annealing at 700 °C. Enhanced surface grooves aligned along <100> directions are observed in films annealed at 850 °C. Strain relaxation as measured by x-ray diffraction is significantly greater at the higher temperature. Prolonged anneals at 850 °C also result in islanding. The surface roughening processes have also been studied in subcritical films with 15% Ge at 900 °C. These films also show enhanced grooving aligned along <100> directions. These observations are consistent with an anisotropic elastic analysis which indicates that grooving should occur preferentially along <100> directions. Intermixing effects in these samples have also been investigated through depth profiling using Auger Electron Spectroscopy. In addition to the above subcritical films, other films with 18% and 22% Ge and supercritical thicknesses have also been studied. For these films, surface grooving is observed along <110> directions, which suggests that these grooves are related to the formation of misfit dislocation networks. The role of these surface roughening processes in the nucleation of dislocations has also been explored.

Study on Ge content of intermediate layer in growing relaxed Ge films on Si

Growth of Ge Layer on Relaxed Ge-Rich SiGe by Ultrahigh Vacuum Chemical Vapor Deposition

Study of Si and Ge growth on Si(100) surface

Epitaxial growth of low dislocation Ge thin films on Si (001) substrates using a Si-Ge intermediate layer

Growth of Fully Relaxed Si0. 83Ge0. 17 Layer Free of Dislocations by UHV/CVD System

Investigation of Strain-Relaxed SiGe Thin Film Grown on Ion-Implanted Si Compliant Substrate

Epitaxial Growth of Fully Relaxed Si0.75Ge0.25 on SOI Substrate

Strain study of partially relaxed Ge epilayers on Si (100) substrate

High quality partially relaxed SiGe film grown on silicon-on-insulator substrate by ultra-high vacuum chemical vapor deposition

HV/CVD Grown Relaxed SiGe Buffer Layers for SiGe HMOSFETs

High-quality Ge film grown on Si substrate and its thermodynamic mechanism

The growth and quality evaluation of strained Si material with multilayer structure

Fabrication of Strained Ge Film Using a Thin SiGe Virtual Substrate

Strain Relaxation and Misfit Dislocation in SiGe Epilayers Grown in Micron Size Windows by MBE

Growth of Ge-Si strained layers and DC XRD study on epitaxial films

Strain Relaxation in Heteroepitaxial Si<sub>1-x</sub>Ge<sub>x</sub> Films via Surface Roughening Processes

Strain Relaxation in Graded SiGe Grown by Ultra-High Vacuum Chemical Vapor Deposition (UHVCVD)

Surface Mobility Difference Between Si and Ge and Its Effect on Growth of SiGe Alloy Films and Islands.

Critical thickness for plastic relaxation of SiGe on Si(001) revisited

Study of Strain in Partially Relaxed Ge Epilayers on Si(100) Substrate

Strain Relaxation in Heteroepitaxial Si1-xGex Films via Surface Roughening Processes