Abstract:In this study, the growth kinetics of SiGe in a reduced pressure chemical vapor deposition system using dichlorosilane (SiH2Cl2) and germane (GeH4) as the Si and Ge precursors were investigated. The SiGe growth rate and Ge content were found to depend on the deposition temperature, GeH4 flow and reactor chamber pressure. The SiGe growth rate escalates with increasing deposition temperature, while the Ge content is reduced. The SiGe growth rate accelerates with increasing GeH4 flow, while the Ge content increases more slowly. According to the experimental data, a new relationship between Ge content (x) and F(GeH4)/F(SiH2Cl2) mass flow ratio is deduced: x 2.5/(1−x) = nF(GeH4)/F(SiH2Cl2). The SiGe growth rate and Ge content improve with increasing reactor chamber pressure. By selecting proper precursor flows and reactor pressure, SiGe films with the same Ge content can be fabricated at various temperatures. However, the quality of the SiGe crystals is clearly dependent on the deposition temperature. At lower deposition temperature, higher crystalline quality is achieved. Because the growth rate dramatically drops with lower temperatures, the optimum growth temperature must be a compromise between the crystalline quality and the growth rate. X-ray diffraction, Raman scattering spectroscopy and atomic force microscopy results indicate that 650°C is the optimum temperature for fabrication of Si0.75Ge0.25 film.

Fabrication of Strained Ge Film Using a Thin SiGe Virtual Substrate

Promoting Strain Relaxation of Si0.72ge0.28 Film on Si (100) Substrate by Inserting A Low-Temperature Ge Islands Layer in Uhvcvd

Growth of Ge Layer on Relaxed Ge-Rich SiGe by Ultrahigh Vacuum Chemical Vapor Deposition

Fabrication of Strained Silicon Using Reduced Pressure Chemical Vapor Deposition Process

A New Method of Fabricating Strained Silicon Materials

Reduced Perssure-Chemical Vapor Deposition of High Quality Ge Layers on SiGe/Si Superlayers for Microelectronics and Optoelectronics Purposes

Ultrathin Low Temperature Si0.75Ge0.25/Si Buffer Layer for the Growth of High Quality Ge Epilayer on Si (100) by RPCVD

Thin strain-relaxed SiGe grown by ultrahigh vacuum chemical vapor deposition

Fabrication of High Quality Strained SiGe on Si Substrate by RPCVD

Fabrication and Characterization of Strained Si Material Using SiGe Virtual Substrate for High Mobility Devices

High quality Ge epilayer on Si (1 0 0) with an ultrathin Si1−x Ge x /Si buffer layer by RPCVD

Thin Relaxed SiGe Layer Grown on Ar^＋ Ion Implanted Si Substrate by Ultra-High Vacuum Chemical Vapor Deposition

High quality Ge epilayer on Si (100) with an ultrathin Si1-xGex/Si buffer layer by RPCVD

High-quality Strain-Relaxed Si0.72Ge0.28 Layers Grown by MBE-UHV/CVD Combined Deposition Chamber

High Quality Ge Epilayer on Si (1 0 0) with an Ultrathin Si1−xGex/Si Buffer Layer by RPCVD

High quality partially relaxed SiGe film grown on silicon-on-insulator substrate by ultra-high vacuum chemical vapor deposition

Epitaxial growth of low dislocation Ge thin films on Si (001) substrates using a Si-Ge intermediate layer

Epitaxial growth of thick Ge layers with low dislocation density on silicon substrate by UHV/CVD

The growth and quality evaluation of strained Si material with multilayer structure

Growth of Thick Ge Epitaxial Layers with Low Dislocation Density on Silicon Substrate by UHV/CVD

Fabrication of High Quality SiGe Virtual Substrates by Combining Misfit Strain and Point Defect Techniques