Abstract:We discuss the SiGe island co-sputtering deposition on a microcrystalline silicon (μc-Si) buffer layer and the secondary island growth based on this pre-SiGe island layer. The growth phenomenon of SiGe islands on crystalline silicon (c-Si) is also investigated for comparison. The pre-SiGe layer grown on μc-Si exhibits a mixed-phase structure, including SiGe islands and amorphous SiGe (a-SiGe) alloy, while the layer deposited on c-Si shows a single-phase island structure. The preferential growth and Ostwald ripening growth are shown to be the secondary growth mechanism of SiGe islands on μc-Si and c-Si, respectively. This difference may result from the effect of amorphous phase Si (AP-Si) in μc-Si on the island growth. In addition, the Si-Ge intermixing behavior of the secondary-grown islands on μc-Si is interpreted by constructing the model of lateral atomic migration, while this behavior on c-Si is ascribed to traditional uphill atomic diffusion. It is found that the aspect ratios of the preferential-grown super islands are higher than those of the Ostwald-ripening ones. The lower lateral growth rate of super islands due to the lower surface energy of AP-Si on the μc-Si buffer layer for the non-wetting of Ge at 700 °C and the stronger Si-Ge intermixing effect at 730 °C may be responsible for this aspect ratio difference.

The growth and investigation of SiGe films on buried Ge islands

Study of Si and Ge growth on Si(100) surface

Island-growth of SiCGe films on SiC

Secondary growth mechanism of SiGe islands deposited on a mixed-phase microcrystalline Si by ion beam co-sputtering

Surface Mobility Difference Between Si and Ge and Its Effect on Growth of SiGe Alloy Films and Islands.

Growth of Ge Layer on Relaxed Ge-Rich SiGe by Ultrahigh Vacuum Chemical Vapor Deposition

Growth of Ge-Si strained layers and DC XRD study on epitaxial films

Ge/Si superlatices grown on thin relaxed GeSi alloy buffer with Ge islanding buried layer

Epitaxial growth of high-quality Ge layers on Si with Ge2H6 under UHV-CVD conditions

Heteroepitaxial Growth of Ge Films on Si Substrates by Molecular-Beam Epitaxy

High-quality Ge film grown on Si substrate and its thermodynamic mechanism

High quality partially relaxed SiGe film grown on silicon-on-insulator substrate by ultra-high vacuum chemical vapor deposition

Cvd Growth of Ge Films on Graded Si1-Xgex: C Buffers

Investigation of Strain-Relaxed SiGe Thin Film Grown on Ion-Implanted Si Compliant Substrate

Chemical vapor deposition of Ge films on Si1-xGex:C buffers

Composition and Strain Measurements of Ge(Si)/Si(001) Islands by HRTEM.

Growth and Characterization of SiGe on c-Plane Sapphire Using a Chemical Vapor Deposition System

Self-organized germanium quantum dots grown by molecular beam epitaxy on Si(100)

Growth of Ultrathin Si1-xGex Films on Si Substrate for Fabricating SGOI

Strains in Si Substrate Induced by Formation of Ge Islands

Extracting Composition and Alloying Information of Coherent Ge(Si)/Si(001) Islands from [001] On-Zone Bright-Field Diffraction Contrast Images