Abstract:Surface roughening associated with strain relaxation of Si1-xGex films grown epitaxially on (100) Si substrates has been investigated using transmission electron microscopy, atomic force microscopy and x-ray diffraction. Epitaxial films 100 Å in thickness and containing 18% Ge, which are subcritical with respect to the formation of misfit dislocations, show strain relaxation through surface roughening on annealing at 700 °C. Enhanced surface grooves aligned along <100> directions are observed in films annealed at 850 °C. Strain relaxation as measured by x-ray diffraction is significantly greater at the higher temperature. Prolonged anneals at 850 °C also result in islanding. The surface roughening processes have also been studied in subcritical films with 15% Ge at 900 °C. These films also show enhanced grooving aligned along <100> directions. These observations are consistent with an anisotropic elastic analysis which indicates that grooving should occur preferentially along <100> directions. Intermixing effects in these samples have also been investigated through depth profiling using Auger Electron Spectroscopy. In addition to the above subcritical films, other films with 18% and 22% Ge and supercritical thicknesses have also been studied. For these films, surface grooving is observed along <110> directions, which suggests that these grooves are related to the formation of misfit dislocation networks. The role of these surface roughening processes in the nucleation of dislocations has also been explored.

Composition and Strain Measurements of Ge(Si)/Si(001) Islands by HRTEM.

Extracting Composition and Alloying Information of Coherent Ge(Si)/Si(001) Islands from [001] On-Zone Bright-Field Diffraction Contrast Images

Composition and Its Impact on Shape Evolution in Dislocated Ge(Si)/Si Islands

Strains in Si Substrate Induced by Formation of Ge Islands

Strain Analysis of Ge/Si(001) Islands after Initial Si Capping by Raman Spectroscopy

Study of Si and Ge growth on Si(100) surface

Modified Stranski-Krastanow Mode for Ge Island Growth on (001) Si at High Temperature

Effect of Interlayer Strain Interaction on the Island Composition and Ordering in Ge/Si(001) Island Superlattices

Quantitative Strain Characterization of SiGe Heterostructures by High-Resolution Transmission Electron Microscopy

Lattice Strains and Composition of Self-Organized Ge Dots Grown on Si(001)

Strain study of partially relaxed Ge epilayers on Si (100) substrate

Application of Raman Scattering to Study the Strain Distribution in SiGe Layers

Study of Strain in Partially Relaxed Ge Epilayers on Si(100) Substrate

The growth and investigation of SiGe films on buried Ge islands

H DISTRIBUTION AND STRAIN EVOLUTION IN SiGe/Si HETEROSTRUCTURE IMPLANTED BY H DIMERS

Surface Mobility Difference Between Si and Ge and Its Effect on Growth of SiGe Alloy Films and Islands.

Strain relaxation mechanisms in coherent and incoherent Ge(Si)/Si islands

Strain Relaxation in Heteroepitaxial Si1-xGex Films via Surface Roughening Processes

Delayed plastic relaxation limit in SiGe islands grown by Ge diffusion from a local source

Compressive and Tensile Strain Effects on Atomic Distribution in Strained Si-Ge Alloys

Strain Relaxation In Sige Virtual Substrate Characterized By High Resolution X-Ray Diffraction