Modified Stranski-Krastanow Mode for Ge Island Growth on (001) Si at High Temperature

Rose Leon,Xiaozhou Liao,Jin Zou,D. J. H. Cockayne,Jing‐Kai Qin,Zuimin Jiang,X. Wang

IF: 3.7

1999-01-01

Physical Review B

Abstract:Transmission electron microscopy is used to study the morphology and the composition profile of pure Ge islands grown at high temperature on (001) Si by molecular beam epitaxy.

What problem does this paper attempt to address?

Extracting Composition and Alloying Information of Coherent Ge(Si)/Si(001) Islands from [001] On-Zone Bright-Field Diffraction Contrast Images

XZ Liao,J Zou,DJH Cockayne,ZM Jiang,X Wang

DOI: https://doi.org/10.1063/1.1394900

IF: 2.877

2001-01-01

Journal of Applied Physics

Abstract:Ge(Si)/Si(001) coherent islands grown at 700 °C by molecular beam epitaxy were investigated using transmission electron microscopy. [001] on-zone bright-field diffraction contrast imaging and image simulation techniques were used to investigate the structure of these coherent islands. Comparison of simulated and experimental images indicates nonuniform composition distribution within the coherent islands when the islands were grown at high temperatures (700 °C), but uniform composition for growth at lower temperatures (600 °C).
Study of Si and Ge growth on Si(100) surface

Lei Wang,JingChang Tang,Deren Yang,Xuesen Wang,Yanfang Hu

2002-01-01

Abstract:Utilizing scanning tunneling microscope and UHV system, the growth of Si and Ge on Si(100) surface have been investigated. The morphological and structural properties of the surfaces are studies. A nano-patterned Si film can be produced by homoepitaxy on Si(100). The growth of Ge on Si(100) will form regular 3D islands. On the multilayer film of Si/Ge/Si(100), the Ge will form regular small and big is lands. The big islands are probably stabilized by a Ge/Si/Ge shell structure.
Composition and Strain Measurements of Ge(Si)/Si(001) Islands by HRTEM.

J. H. Lin,Y. Q. Wu,S. Tang,Y. L. Fan,X. J. Yang,Z. M. Jiang,J. Zou

DOI: https://doi.org/10.1166/jnn.2009.029

2009-01-01

Journal of Nanoscience and Nanotechnology

Abstract:The distributions of the composition and the strain in the Ge(Si)/Si(001) coherent islands grown by molecular-beam epitaxy are investigated by digital analysis of high resolution transmission electron microscopy (HRTEM) micrographs. Local composition and strain are obtained from the measurement of the lattice displacement based on the Poisson's formula and Vegard's law. The analysis suggests that the islands have high Ge content at the island's central region. The island is partially relaxed by the substrate deformation and strain concentrated around the edge of islands. The alloying of the islands was found due to the Si surface diffusion.
Composition and Its Impact on Shape Evolution in Dislocated Ge(Si)/Si Islands

XZ Liao,J Zou,DJH Cockayne,ZM Jiang,X Wang,R Leon

DOI: https://doi.org/10.1063/1.1290384

IF: 4

2000-01-01

Applied Physics Letters

Abstract:The composition distribution of Ge(Si)/Si (001) islands grown at 700 °C by molecular beam epitaxy is investigated using high-spatial resolution x-ray energy dispersive spectrometry in a scanning transmission electron microscope. Island shapes are investigated using cross-section transmission electron microscopy. Results show nonuniformity of the composition distribution in the islands, which affects the evolution of the aspect ratios of height-to-base diameter of dislocated islands.
Study on silicon molecular beam epitaxial layer morphology by scanning tunneling microscopy

Tiecheng Zhou,Qun Cai,Angru Zhu,Shuzhong Dong,Chi Sheng,MingRen Yu,Xiangjiu Zhang,Xun Wang

1994-01-01

Abstract:This paper presented some experimental results on the morphology of silicon molecular beam epitaxially grown Si and Ge samples studied by scanning tunneling microscopy. The Ge island on the surface during the initial stage of heteroepitaxy of Ge on Si substrate was observed. The reflection high energy electron diffraction method and scanning tunneling microscopy for studying morphology were compared.
Temperature Dependence of Ordered GeSi Island Growth on Patterned Si (001) Substrates

Zhenyang Zhong,Peixuan Chen,Zuimin Jiang,Guenther Bauer

DOI: https://doi.org/10.1063/1.2965484

IF: 4

2008-01-01

Applied Physics Letters

Abstract:Statistical information on GeSi islands grown on two-dimensionally pit-patterned Si substrates at different temperatures is presented. Three growth regimes on patterned substrates are identified: (i) kinetically limited growth at low growth temperatures, (ii) ordered island growth in an intermediate temperature range, and (iii) stochastic island growth within pits at high temperatures. A qualitative model based on growth kinetics is proposed to explain these phenomena. It can serve as a guidance to realize optimum growth conditions for ordered islands on patterned substrates.
The growth and investigation of SiGe films on buried Ge islands

Jingyun Huang,Zhizhen Ye,Weihua Chen,Zhen Qi,Huanming Lu,Wang Lei,Binghui Zhao,Duanlin Que

DOI: https://doi.org/10.1016/S0022-0248(99)00338-3

IF: 1.8

1999-01-01

Journal of Crystal Growth

Abstract:SiGe/Si films on buried Ge islands on Si substrates were deposited using an ultrahigh vacuum chemical vapor deposition system at a temperature of 620°C in comparison with a single-step SiGe film with the same Ge content and growth temperature. X-ray diffraction measurements show that the crystalline quality of the SiGe films on the buried Ge islands was better than that without buffers, and the top SiGe films were relaxed. The high-resolution cross-sectional transmission electron microscopy images show that the size of the three dimension Ge islands is about 60nm and the top SiGe film on buried Ge islands is better crystallographically than that grown without buffers.
Islanding, growth mode and ordering in Si heteroepitaxy on Ge(001) substrates structured by thermal annealing

L. Persichetti,M. Fanfoni,B. Bonanni,M. De Seta,L. Di Gaspare,C. Goletti,L. Ottaviano,A. Sgarlata

DOI: https://doi.org/10.1016/j.susc.2019.02.002

2019-02-04

Abstract:Si/Ge heteroepitaxial dots under tensile strain are grown on nanostructured Ge substrates produced by high-temperature flash heating exploiting the spontaneous faceting of the Ge(001) surface close to the onset of surface melting. A very diverse growth mode is obtained depending on the specific atomic structure and step density of nearby surface domains with different vicinal crystallographic orientations. On highly-miscut areas of the Ge(001) substrate, the critical thickness for islanding is lowered to about 5 ML, in contrast to the 11 ML reported for the flat Ge(001) surface, while on unreconstructed (1x1) domains the growth is Volmer-Weber driven. An explanation is proposed considering the diverse relative contributions of step and surface energies on misoriented substrates. In addition, we show that the bottom-up pattern of the substrate naturally formed by thermal annealing determines a spatial correlation for the dot sites.

Mesoscale and Nanoscale Physics
Microstructures of Ge/Si Superlattices Growth at Low Temperature

XS Wu,WS Tan,SS Jiang,ZH Wu,YF Ding,HH Cheng

2003-01-01

Abstract:Si/Ge superlattices were grown at low temperature with modified Stranski-Krastanov (SK) MBE method. X-ray specular, off-specular reflectivity, and X-ray transverse scattering measurements were done to characterize the structure of the Ge/Si superlattice. The fitted roughness and the thickness of the Ge-layer indicate that Ge may diffuse into Si-layer and form the inverted trapezium or nano-scaled hut at the Si/Ge interface. The inverted trapezium extends to form islands, which can be estimated from the volume of the Ge-Si alloy in the structure. These islands can be averaged as a Ge-Si alloy sub-layer, the averaged thickness was fitted from the pure X-ray specular reflectivity. The composition of Ge in the SiGe dots was estimated as 15%-25% by X-ray specular reflectivity and by the thickness of Ge sub-layer. These results were confirmed by TEM observation.
Microstructures of Ge/Si Superlattices Growtn at Low Temperature

吴小山,谭伟石,蒋树声,吴忠华,丁永凡,曾鸿祥

DOI: https://doi.org/10.3321/j.issn:0254-3052.2003.08.018

2003-01-01

Abstract:Si/Ge superlattices were grown at low temperature with modified Stranski-Krastanov (SK) MBE method.X-ray specular,off-specular reflectivity, and X-ray transverse scattering measurements were done to characterize the structure of the Ge/Si superlattice.The fitted roughness and the thickness of the Ge-layer indicate that Ge may diffuse into Si-layer and form the inverted trapezium or nano-scaled hut at the Si/Ge interface.The inverted trapezium extends to form islands, which can be estimated from the volume of the Ge-Si alloy in the structure.These islands can be averaged as a Ge-Si alloy sub-layer, the averaged thickness was fitted from the pure X-ray specular reflectivity.The composition of Ge in the SiGe dots was estimated as 15 % -25 % by X-ray specular reflectivity and by the thickness of Ge sub-layer.These results were confirmed by TEM observation.
Island-growth of SiCGe films on SiC

Li Lian-Bi,Chen Zhi-Ming,Lin Tao,Pu Hong-Bin,Li Qing-Min,Li Jia,李连碧,陈治明,林涛,蒲红斌,李青民,李佳

DOI: https://doi.org/10.1088/1009-1963/16/11/053

2007-01-01

Chinese Physics

Abstract:SiCGe ternary alloys have been grown on SiC by hot-wall low-pressure chemical vapour deposition. It has been found that the samples exhibit an island configuration, and the island growth of SiCGe epilayer depends on the processing parameters such as the growth temperature. When the growth temperature is comparatively low, the epilayer has two types of islands: one is spherical island; another is cascading triangular island. With the increase of the growth temperature, the islands change from spherical to cascading triangular mode. The size and density of the islands depend on the growth duration and GeH4 flow-rate. A longer growth time and a larger GeH4 flow-rate can increase the size and density of the island in the initial stage of the epitaxy. In our case, The optimal growth for a high density of uniform islands occurred at a growth temperature of 1100 degrees C for 1-minute growth, with 10 SCCM GeH4, resulting in a narrow size distribution (about 30 nm diameter) and high density (about 3.5 x 10(10) dots/cm(2)). The growth follows Stranski-Krastanov mode (2D to 3D mode), both of the islands and the 2D growth layer have face-centred cubic structure, and the critical thickness of the 2D growth layer is only 2.5 nm.
Alternative Mechanism for Misfit Dislocation Generation During High-Temperature Ge(Si)/Si (001) Island Growth

J Zou,XZ Liao,DJH Cockayne,ZM Jiang

DOI: https://doi.org/10.1063/1.1506414

IF: 4

2002-01-01

Applied Physics Letters

Abstract:The misfit dislocations in [001] Ge(Si)/Si islands grown at 700 °C were investigated using transmission electron microscopy. 30° partial misfit dislocations are found both in the island/substrate interface and near the island surface. Since the 30° partial leads the movement of the 60° dissociated misfit dislocation in a (001) compressively strained system such as (001) GeSi/Si, a generation mechanism of misfit dislocations through partial misfit dislocations half loops is proposed.
Ge Molecular Beam Epitaxy on Si(113): Surface Structures, Nanowires and Nanodots

ZH Zhang,K Sumitomo,H Omi,T Ogino,X Zhu

DOI: https://doi.org/10.1002/sia.1664

2004-01-01

Surface and Interface Analysis

Abstract:By performing epitaxial growth of Ge on Si(113) layer by layer, observed using scanning tunnelling microscopy, we show the Ge/Si(113) surface structure and island shape transition with an increase of Ge coverage and we discuss the transition in terms of epitaxial stress evolution and relaxation of the epitaxial morphologies. Nanofeatures of Ge epitaxial islands, such as nanowires and nanodots, are highlighted. Copyright (C) 2004 John Wiley Sons, Ltd.
Annealing Effects on the Microstructure of Ge/Si(001) Quantum Dots

XZ Liao,J Zou,DJH Cockayne,J Wan,ZM Jiang,G Jin,KL Wang

DOI: https://doi.org/10.1063/1.1398615

IF: 4

2001-01-01

Applied Physics Letters

Abstract:Ge/Si(001) multilayer islands produced by gas-source molecular-beam epitaxy at 575 °C were investigated using energy-filtering transmission electron microscopy. Results show, for as-grown samples, not only a continuous enlargement of island size in upper layers but also a continuous increase of Ge concentration within islands in upper layers. As a result of the increasing island size and Ge concentration within the islands, the island density in upper layers decreases. For samples annealed at 900 °C for 5 min, the aspect ratio of buried islands increases significantly, and the average Ge concentration within islands of different layers becomes uniform.
Self-organized germanium quantum dots grown by molecular beam epitaxy on Si(100)

Zui-min Jiang,Hai-jun Zhu,Fang Lu,Jie Qin,Daming Huang,Xun Wang,Chang-wu Hu,Yifan Chen,Ziqiang Zhu,Takafumi Yao

DOI: https://doi.org/10.1016/s0040-6090(98)00444-1

IF: 2.1

1998-01-01

Thin Solid Films

Abstract:Under proper and critical growth conditions, very uniform Ge islands could be formed on Si(100) by using molecular beam epitaxy. The atomic force microscopic and cross-sectional transmission electron microscopic observations illustrate that the size and height uniformities of the islands are about ±3%. The Auger electron spectroscopic measurements show that the wetting layer is converted into a SiGe alloy layer due to its intermixing with the substrate during the growth. A very narrow peak with the full width at half maximum (FWHM) of 1.6 meV at the energy of 0.767 eV is observed at the temperature of 16 K. We attribute this peak to the free exciton longitudinal acoustic (LA) phonon replica originated from the Ge islands. As the temperature increases, this narrow peak splits into a doublet. This `camel-like' peak is temporarily explained as the exciton-polariton luminescence.
Effects of Growth Temperature of Si Buffer Layer on Structure and Composition in Gesi Epitaxy Layers on Si Wafer

XS Wu,HL Cai,WS Tan,ZY Zhai,ZH Wu,QJ Jia,HH Cheng,SS Jiang

2005-01-01

Abstract:This study systematically addresses the effect of temperature on the growth of SiGe compliant substrates. The characteristics of the films were experimentally determined by various techniques, including high resolution X-ray diffraction (HRXRD), surface diffraction, X-ray reflectivity with synchrotron radiation, transmission electron microscopy (TEM) and atomic force microscopy (AFM). In the growth temperature range from 350-600 degrees C, X-ray diffraction shows that the film was strain relaxed with a Ge content of 32 +/- 2%, and TEM indicates that the film is free from dislocations in the temperature range, 400-500 degrees C. AFM reveals that the optimal temperature for the growth is 450 degrees C, with a root mean squared surface roughness of 15 angstrom.
Strains in Si Substrate Induced by Formation of Ge Islands

WR Jiang,ZM Jiang,B Shi,H Xiong,DZ Hu,DW Gong,YL Fan

DOI: https://doi.org/10.1117/12.408406

2000-01-01

Abstract:Grazing incidence x-ray diffraction measurements at different grazing angles for self-organized Ge dots grown on Si(001) are carried out by using synchrotron radiation as a light source. Deformation strains in the substrate underneath or surrounding the dots induced by formation of Ge quantum dots are investigated. Besides a tensile strain existing underneath the dots, a peak located at the higher angle side of Si(220) or Si(400) is observed for the first time, the origin of this peak is attributed to the near surface compressive strain in the peripheral substrate regions surrounding the Ge dots. This compressive strain corresponds to a -0.8% lattice constant change parallel to the interface.
Surface Mobility Difference Between Si and Ge and Its Effect on Growth of SiGe Alloy Films and Islands.

L Huang,F Liu,GH Lu,XG Gong

DOI: https://doi.org/10.1103/physrevlett.96.016103

IF: 8.6

2006-01-01

Physical Review Letters

Abstract:Based on first-principles calculations of surface diffusion barriers, we show that on a compressive Ge(001) surface the diffusivity of Ge is 10(2)-10(3) times higher than that of Si in the temperature range of 300 to 900 K, while on a tensile surface, the two diffusivities are comparable. Consequently, the growth of a compressive SiGe film is rather different from that of a tensile film. The diffusion disparity between Si and Ge is also greatly enhanced on the strained Ge islands compared to that on the Ge wetting layer on Si(001), explaining the experimental observation of Si enrichment in the wetting layer relative to that in the islands.
Self-Assembled Sige Islands with Uniform Shape and Size by Controlling Si Concentration in Islands

N Deng,PY Chen,ZJ Li

DOI: https://doi.org/10.1016/j.jcrysgro.2003.10.091

IF: 1.8

2004-01-01

Journal of Crystal Growth

Abstract:Atomic force microscopy was used to study the shape transition of SiGe islands on Si (100) by ultra-high vacuum chemical vapor deposition. The influence of Si concentration on shape transition of SiGe islands was investigated. The results show that the critical volume increases with Si concentration, at which the islands change from pyramids to domes. A modified model was developed to explain the influence of Si concentration on the shape transition. Unimodal dome-shaped and pyramid-shaped SiGe islands were grown under proper conditions, respectively. This work demonstrates that the shape and size of SiGe islands can be controlled accurately through adjusting Si concentration in islands.
Nanoscale Superconductivity of Γ-Ga Islands Grown by Molecular Beam Epitaxy

HuiMin Zhang,JunPing Peng,JiaQi Guan,Zhi Li,CanLi Song,LiLi Wang,Ke He,XuCun Ma,QiKun Xue

DOI: https://doi.org/10.1007/s11433-015-5707-2

2015-01-01

Abstract:We report on the preparation and superconductivity of metastable γ-Ga islands on Si (111) substrate. The Ga grows in a typical Volmer-Weber mode at a low temperature of 110 K, resulting in formation of Ga nanoislands at various sizes with the identical γ-phase. In-situ low temperature scanning tunneling spectra reveal quantized electronic states in ultrathin Ga islands. It is found that both the lateral size and thickness of the Ga islands strongly suppress the superconductivity. Due to substantial surface energy contribution, the transition temperature T c scales inversely with the island thickness and the minimum thickness for the occurrence of superconductivity is calculated to be two monolayers.

Modified Stranski-Krastanow Mode for Ge Island Growth on (001) Si at High Temperature

Extracting Composition and Alloying Information of Coherent Ge(Si)/Si(001) Islands from [001] On-Zone Bright-Field Diffraction Contrast Images

Study of Si and Ge growth on Si(100) surface

Composition and Strain Measurements of Ge(Si)/Si(001) Islands by HRTEM.

Composition and Its Impact on Shape Evolution in Dislocated Ge(Si)/Si Islands

Study on silicon molecular beam epitaxial layer morphology by scanning tunneling microscopy

Temperature Dependence of Ordered GeSi Island Growth on Patterned Si (001) Substrates

The growth and investigation of SiGe films on buried Ge islands

Islanding, growth mode and ordering in Si heteroepitaxy on Ge(001) substrates structured by thermal annealing

Microstructures of Ge/Si Superlattices Growth at Low Temperature

Microstructures of Ge/Si Superlattices Growtn at Low Temperature

Island-growth of SiCGe films on SiC

Alternative Mechanism for Misfit Dislocation Generation During High-Temperature Ge(Si)/Si (001) Island Growth

Ge Molecular Beam Epitaxy on Si(113): Surface Structures, Nanowires and Nanodots

Annealing Effects on the Microstructure of Ge/Si(001) Quantum Dots

Self-organized germanium quantum dots grown by molecular beam epitaxy on Si(100)

Effects of Growth Temperature of Si Buffer Layer on Structure and Composition in Gesi Epitaxy Layers on Si Wafer

Strains in Si Substrate Induced by Formation of Ge Islands

Surface Mobility Difference Between Si and Ge and Its Effect on Growth of SiGe Alloy Films and Islands.

Self-Assembled Sige Islands with Uniform Shape and Size by Controlling Si Concentration in Islands

Nanoscale Superconductivity of Γ-Ga Islands Grown by Molecular Beam Epitaxy