Abstract:Strained GexSi1-x/Si superlattices with Ge content of 0.48 and 0.49 grown by MBE at 420°C (sample A) and 570°C (sample B) were annealed and studied by X-ray diffraction, Raman scattering and TEM. The cross section TEM image of the samples before annealing showed that the growth of sample A was two-dimensional, but for sample B, the growth of the GexSi1-x layer was three-dimensional. By the X-ray diffraction spectra before and after annealing for samples A and B, the strain relaxations from X-ray diffraction measurements were 27% and 35% for samples A and B, respectively. This difference might be from the three-dimensional growth of sample B, in which the strain was stronger than that in sample A. Raman scattering measurements showed that the Ge-Ge peak and the Ge-Si peak shifted towards the lower energy after annealing, while the Si-Si peak shifted towards the higher energy. The reason for the shift of these peaks could be explained by the common contribution of the strain relaxation and the internal diffusion of Ge atoms into the Si layer. In addition, the behavior of the strained GexSi1-x/Si superlattice annealed by rapid thermal annealing technology was also studied. A sample of superlattice with a Ge content of 0.46 was rapidly thermal annealed at the temperature range of 600 to 1000°C and at each temperature the sample was annealed twice for 40 s each time. From X-ray diffraction measurements it could be found that as the annealing temperature increased from 600 to 900°C, the strain relaxation would increase from 19% up to 57%. As the sample was annealed at 1000°C, no satellite peaks were in the X-ray diffraction spectra and no multilayer structure could be observed in the cross section TEM image, that is, in the sample the GeSi layers were completely mixed up with the Si layers.

Microstructures of Ge/Si Superlattices Growtn at Low Temperature

Microstructures of Ge/Si Superlattices Growth at Low Temperature

Growth and Microstructures of High Density Ge Quantum Dots on SiO_2 Layers

Investigation of Ge Quantum Dots Formation on Sio2 Substrate Through Annealing Process

An X-ray Scattering Study on Inverted Ge–Si Huts Grown at Low Temperatures

Structural Characteristics of Self-Assembled-Ge/Si Quantum Dot Superlattices

Large and small angle x-ray scattering studies of Si/SiGe superlattices grown by gas-source molecular beam epitaxy

Optical properties of Ge/Si quantum dot superlattices

Study of Si and Ge growth on Si(100) surface

Theoretical Study of Structures and Growth of Strained Si/Ge Superlattices

The Structure of GexSi1−x/Si Strained Layer Superlattices and Heterostructures

Structural stability of SiGe/Si strained-layer superlattices

Structural Evolution of GeMn/Ge Superlattices Grown by Molecular Beam Epitaxy under Different Growth Conditions

An investigation on the thermal stability of the GexSi1-x⧸Si superlattice grown by MBE

Microstructures of Ge-dots/Si Multilayered Structures Fabricated by Ni-induced Lateral Crystallization

Intensity Modulation of Glancing Angle X-Ray Diffraction Spectra of Ge<sub>x</sub>Si<sub>1−x</sub>/Si Superlattices

Promising Features of Low-Temperature Grown Ge Nanostructures on Si(001) Substrates

Ni induced lateral crystallization of high density Ge-dots/Si heterostructures

Ge-Dot/Si Multilayered Structures Through Ni-Induced Lateral Crystallization

Epitaxial growth of low dislocation Ge thin films on Si (001) substrates using a Si-Ge intermediate layer

Substrate Temperature and Ge Concentration Dependence of the Microstructure of Strained Si-Ge Alloys